钢筋混凝土框架结构施工技术

对多层框架结构施工过程中遇到的技术问题及解决方案进行论述,对做好类似工程的施工技术工作具有借鉴意义。     

CF4预处理后热生长薄栅氧漏电流及势垒研究

嵌入式Flash Memory要求低的工作电压．采用反应离子刻蚀技术，用CF4气体在低功率下对硅片做预处理，再热生长薄氧化层，从而在氧化层中引入F，降低氧化层势垒:势垒高度从3.05eV降低到2.5eV，隧穿电流增加，从而可以在低压下提高Flash Memory的编程效率．     

Fabrication of a 100%fill-factor silicon microlens array

正A simple method has been developed for the fabrication of a silicon microlens array with a 100%fill factor and a smooth configuration.The microlens array is fabricated by using the processes of photoresist(SU8- 2005) spin coating,thermal reflow,thermal treatment and reactive ion etching(RIE).First,a photoresist microlens array on a single-polished silicon substrate is fabricated by both thermal reflow and thermal treatment technologies. A typical microlens has a square bottom with size of 25μm,and the distance between every two adjacent microlenses is 5μm.Secondly,the photoresist microlens array is transferred to the silicon substrate by RIE to fabricate the silicon microlens array.Experimental results reveal that the silicon microlens array could be formed by adjusting the quantities of the reactive ion gases of SF_6 and O_2 to proper values.In this paper,the quantities of SF_6 and O_2 are 60 sccm and 50 sccm,respectively,the corresponding etch ratio of the photoresist and the silicon substrate is 1 to 1.44.The bottom size and height of a typical silicon microlens are 30.1μm and 3μm,respectively. The focal lengths of the microlenses ranged from 15.4 to 16.6μm.     

角度误差影响运动角锥棱镜反射特性的理论分析

角度误差对运动角锥棱镜反射特性有何影响,国内未见报导。本文根据矩阵光学理论证明了,角度制造误差将引起运动角锥棱镜反射光束空间方位的随机改变,但其改变属于高阶小量。这个结论对于将角锥棱镜作为He-Ne激光频率分裂位移传感器动镜使用,具有指导意义。     

A low voltage-power 13-bit 16 MSPS CMOS pipelined ADC

A low voltage-power, 13-bit and 16 MSPS analog-to-digital converter (ADC) was implemented in 0.25-/spl mu/m one-poly five-metal standard CMOS process with MIM capacitors. This ADC used a constant-gm switch to improve the nonlinear effect and a telescopic operational transconductance amplifier with a wide-swing biasing technique for power saving and low supply voltage operation. The converter achieved a peak SNDR of 59.2 dB with 16.384 MSPS, a low supply voltage of 1.3V, and Nyquist input frequency of 8.75 MHz. The static INL of /spl plusmn/2.0 LSB and DNL of /spl plusmn/0.5 LSB were obtained. The total power consumption of this converter was 78 mW. This chip occupied 3.4 mm /spl times/ 3.6 mm area.     

ENIG的耐蚀性：一种改进的浸金工艺

为了了解ENIG化学变化对浸金耐蚀性的形响,探讨了浸金电镀溶液的pH值和化学性质与结果所得到的浸金层的耐蚀性之间的关系。     

The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes

We report on the role of cesium fluoride (CsF) doping on the enhanced electron transport properties of tris-(8-hydroxyquinolin) aluminum (Alq₃) for organic light-emitting diodes. The electronic structures of CsF-doped Alq₃ layers with various doping concentration are characterized by in situ ultraviolet and X-ray photoelectron spectroscopies, showing an n-type electrical doping effect with Fermi level shift towards unoccupied molecular orbital and the formation of chemistry-induced gap-states. The increase in conductivity and reduction in electron injection barrier in CsF-doped Alq₃ layer with optimal doping concentration lead to the enhanced electron injection and transport, which are consistent with the improved electrical characteristics of OLEDs.     

Dual-material gate (DMG) field effect transistor

A generic new type of field effect transistor (FET), the dual material gate (DMG) FET, is proposed and demonstrated. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain (for n-channel FET, the opposite for p-channel FET), resulting in a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short-channel effects. Using the heterostructure FET as a vehicle, the principle, computer simulation results, design guidelines, processing, and characterization of the DMGFET are discussed in detail     

500kV顺德站VQC软件使用需求调研及实用化方案

500kV顺德站VQC软件实用化将大大减轻运行人员的工作量,为500kV顺德站以后实现无人值班提供的技术保障。本文对顺德站VQC软件使用进行需求调研以及实用化的过程详细介绍。对500kV变电站VQC软件使用的可行性、技术要求、现场测试、改进措施等进行了介绍,为500kV变电站VQC软件推广应用提供了借鉴及应用经验。