An order-specific clustering algorithm for the determination of representative demand curves

Data clustering consists of a group of procedures used to collect similar entries or data points within a set into clusters. No existing clustering technique considers entries sequentially in time. In some cases, it is desirable to generate clusters that represent a segment of a time-ordered data set. For these purposes, an order-specific clustering algorithm is proposed. The proposed algorithm employs representative load curves to describe the clusters it generates. The capabilities of the order-specific clustering algorithm are demonstrated on a case study using electricity demand data for the province of Ontario, Canada. Two different applications of the clustering algorithm on this data set are given to demonstrate the effect of error threshold values on the formation of clusters. An analysis of the error for each of these clustering applications is presented.     

Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Hot filament and microwave plasma CVD micro- nanocrystalline diamond films are analysed by visible and ultra-violet excitation source Raman spectroscopy. The sample grain size varies from 20 nm to 2 μm. The hydrogen concentration in samples is measured by SIMS and compared to the grain size, and to the ratio of sp² carbon bonds determined by Raman spectroscopy from the 1332 cm^− 1 diamond peak and the sp² 1550 cm^− 1 G band. Hydrogen concentration appears to be proportional to the sp² bonds ratio. The 3000 cm^− 1 CH_x stretching mode band intensity observed on the Raman spectra is decreasing with the G band intensity. Thermal annealing modifies the sp² phase structure and concentration, as hydrogen outdiffuses.     

Integrated carbon nanotube field emission differential amplifier: Modeling and measurement of the common-mode rejection ratio

A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.     

A process-dependent real-time controller for sequencing batch reactor plants: results of full-scale operation.

This paper presents results of a research project, in which a process-dependent real-time control (RTC) strategy for a sequencing batch reactor plant was realised in full-scale. The cycle controller is based on NH4 analysers, NO3 probes, TSS probes and sludge level probes. With this new RTC strategy it was possible to increase the treatment capacity by 50%. By implementation of the new controller the TN, TP and NH4-N treatment efficiency could be improved significantly, too. The treatment efficiency concerning COD is comparable.     

Closed-form error analysis of the non-identical Nakagami-m relay fading channel

We present closed-form expressions for the average bit error probability (ABEP) of BPSK, QPSK and M-QAM of an amplify-and-forward average power scaling dual-hop relay transmission, over non-identical Nakagami-m fading channels, with integer values of m. Additionally, we evaluate in closed-form the ABEP under sufficiently large signal-to-noise ratio for the source-relay link, valid for arbitrary rn. Numerical and simulation results show the validity of the proposed mathematical analysis and point out the effect of the two hops unbalanced fading conditions on the error performance.     

Effect of process parameters on impact strength of Al-7% Si alloy castings produced by VAEPC process

The castings produced by the evaporative pattern casting (EPC) process have blow holes. The blow holes in EPC castings are because of the non-escape of the gas produced as a result of burning of polystyrene pattern in the sand mold. To overcome the problem of blow holes, the EPC process is combined with the vacuum (V)- process. The vacuum applied to EPC mold draws the decomposed gases and improves the casting quality produced by the EPC process. The developed hybrid process has been termed as the vacuum assisted evaporative pattern casting (VAEPC) process. The objective of this paper to investigates the effect of process parameters, i.e, degree of vacuum, pouring temperature, grainfineness number, amplitude of vibration and time of vibration on the impact strength of Al-7% Si alloy castings in VAEPC process. In order to evaluate the effect of selected process parameters, the response surface methodology (RSM) is used to formulate a mathematical model which correlates the independent process parameters with the desired impact strength. The central composite rotatable design has been used to conduct the experiments. The results indicate that the impact strength decreases with increases in the grainfineness number and pouring temperature. Whereas, it has an inverse relationship with amplitude of vibration, time of vibration and degree of vacuum. The best value of impact strength (2.34 N/mm²) has been obtained at 400 mm Hg degree of vacuum imposed, 650°C as pouring temperature, 60 as sand grainfineness number, 460 μm as amplitude of vibration, and 70 s as time of vibration.     

Structural and Superconducting Property Variations with Nominal Mg Non‐Stoichiometry in MgxB2 and Its Enhancement of Upper Critical Field

By applying a combination of characterisation tools, changes in structural and superconducting properties with nominal Mg non‐stoichiometry in Mg_xB₂ are found. The non‐stoichiometry produces enhanced in‐field critical current densities (J_c's) and upper critical field / irreversibility field (H_c2/H_irr(T)) values. Upper critical fields of ～ 21 T (4.2 K) were obtained in nominal Mg‐deficient samples compared to ～ 17 T (4.2 K) for near‐stoichiometric samples.