确定异常高压气藏地质储量和可采储量的新方法

基于文献[1]的定容，封闭，异常高压气藏的物质平衡方程式，提出了确定异常高压气藏原始地质储量，可采储量和采收率的新方法，通过实例的应用和对比表明，提供的新方法是适用的有效的。     

放射性核素迁移的实验室研究——Ⅱ.用混合裂变产物溶液研究核素在地质材料上的吸附

应用裂变产物混合物做为示踪剂研究了~(137)Cs,~(141,144)Ce,~(103,106)Ru,~(103,106)Ru,~(95)Zr,~(95)Nb,~(89,90)Sr在花岗岩、凝灰岩、页岩上的吸附行为。应用批式技术测定了吸附比。核素的γ放射性是用连有SCORPIO-3000多道计算机系统的Ce(Li)探测器测量的。β放射性~(89,90)Sr是放化分离后在G-M计数器上测量的。结果表明:凝灰岩、页岩能强烈吸附Ce,Nb,Zr;吸附Cs居中;吸附Sr,Ru较差;花岗岩的吸附性能都差。     

移动运营商渠道管理模式及存在问题分析

渠道作为营销体系中的重要一环，对移动运营商的发展起着举足轻重的作用。随着国内移动市场竞争的加剧，营销渠道的竞争将成为移动运营商间竞争的焦点。目前，国内两大移动运营商在渠道管理上存在诸多问题，从而影响了其市场拓展。分析了移动选营商渠道管理存在的三个较为突出的问题，并提出了可行的解决方法，从而为移动运营商的渠道管理工作提供思路。     

Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

Abstract The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plantsobtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We cansee that the whole DNA of soybean transformed into wheat via ion beam implantation can inducethe increase in wheat protein content dramatically. The result also shows that the transformationefficiency of different gene types of wheat receptor varies greatly that the implanting time has acertain effect on the efficiency of transformation.     

大面积硅锂漂移探测器制备及其性能

制备了大面积硅锂漂移探测器,其性能为:探测器的灵敏面积123.6 cm~2;灵敏层深度2 mm;在室温和300 V反向偏压的工作条件下漏电流小于20 μA;对~(241)Am 5.486 MeV α粒子的能量分辨(FWHM)为77.67 keV。     

THE ANALYSIS OF THE SEPARATED LAYERS ALGORITHM BY DOMAIN DECOMPOSITION METHOD

From the principle of of the Domain Decomposition Method (DDM), we analyse the 2nd-order linear elliptic partial differential problems and link the Separated-Layers Algorithm (SLA) with DDM. The mathematical properties of SLA and numerical example are presented to obtain satisfactory computation results. For general linear differential ones, also are the structure of SLA and its characteristics discussed.     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。     

Excavation of Inlet Tunnels at Geheyan Power Station

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