Weighted argument systems: Basic definitions, algorithms, and complexity results

We introduce and investigate a natural extension of Dung's well-known model of argument systems in which attacks are associated with a weight, indicating the relative strength of the attack. A key concept in our framework is the notion of an inconsistency budget, which characterises how much inconsistency we are prepared to tolerate: given an inconsistency budget β, we would be prepared to disregard attacks up to a total weight of β. The key advantage of this approach is that it permits a much finer grained level of analysis of argument systems than unweighted systems, and gives useful solutions when conventional (unweighted) argument systems have none. We begin by reviewing Dung's abstract argument systems, and motivating weights on attacks (as opposed to the alternative possibility, which is to attach weights to arguments). We then present the framework of weighted argument systems. We investigate solutions for weighted argument systems and the complexity of computing such solutions, focussing in particular on weighted variations of grounded extensions. Finally, we relate our work to the most relevant examples of argumentation frameworks that incorporate strengths.     

美国南加州大学中国学院简介

文章简要介绍了美国南加州大学建筑学院中国学院,包括设立的时间、目的及发展计划等。     

High gain millimetric negative resistance low noise amplifiers

The limited gain available from GaAs FETs and HEMTs at millimetric frequencies can be overcome by using the devices in a negative resistance amplifier configuration. The advantage of the solid-state negative resistance amplifier over the transmission amplifier is that the gain available is not limited by the active device used. It has been shown that, over a narrow bandwidth, significantly higher gain can be obtained from a negative resistance amplifier, when compared to a transmission amplifier using the same device, while maintaining the same overall noise performance. This has been demonstrated experimentally using a 0.25 mu m HEMT device.<>     

Multiple material domain‐based computational tools for ease assessment of modal parameter in photonic crystal fibers

We report here the development of two computational tools PCFPS (Photonic Crystal Fiber Parameter Study) and PCFPA (Photonic Crystal Fiber Parameter Analysis), equipped with graphical user interface (GUI) for modeling of photonic crystal fiber. The tools are based on different structural parameters, and they provide characteristic analysis of the modal parameters from the structural parameters. The main feature of PCFPS is that it enables the user to find out the values of each defining modal parameter that has an immense contribution towards the manufacture of photonic crystal fiber. Additionally, PCFPA allows the user to observe the variation in the modal parameters with respect to the changes in structural parameters (such as d, Λ, d/Λ, and λ/>Λ). Besides their ease of use, these two schemes have high computational precision and adaptability, giving a novel platform to optical engineers to modulate the microstructured fibers according to their requirement.     

Creep behavior of the ternary 95.5Sn-3.9Ag-0.6Cu solder—Part I: As-cast condition

The compression creep behavior was studied for the ternary solder alloy 95.5Sn-3.9Ag-0.6Cu in the as-cast condition. Samples were tested under stresses of 2–45 MPa and temperatures of −25–160°C. There was a significant variability in the creep curve shape, strain magnitude, and steady-state strain-rate properties. A multivariable linear-regression analysis of the steady-state strain-rate data, using the sinh-law stress representation, indicated two mechanisms distinguished by low- and high-temperature regimes of −25–75°C and 75–160°C, respectively. The sinh-law stress exponent (n) and apparent-activation energy (ΔH) in the −25–75°C regime were 4.4 ± 0.7 kJ/mol and 25 ± 7 kJ/mol (63% confidence intervals), respectively. Those same parameters in the 75–160°C regime were 5.2±0.8 kJ/mol and 95±14 kJ/mol, respectively, for the high-temperature regime. The values of ΔH suggested a short-circuit diffusion mechanism at low temperatures and a lattice or bulk-diffusion mechanism at high temperatures. The stress dependency of the steady-state strain rate did not indicate a strong power-law breakdown behavior or a threshold stress phenomenon. Cracks and grain-boundary sliding were not observed in any of the samples. As the creep temperature increased, a coarsened particle boundary and particle depletion zone formed in the region of fine Ag₃Sn particles that existed between the Sn-rich phase areas. The coarsened particle boundary, as well as accelerated coarsening of Ag₃Sn particles, were direct consequences of the creep deformation process.     

Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K²m to 6 mW/K²m is promising for applications.