Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.     

Power splitting–based energy‐harvesting protocol for wireless‐powered communication networks with a bidirectional relay

In this paper, we apply the power splitting–based energy‐harvesting protocol to enhance the transmission between a wireless access point and a mobile user via a helping relay. The mobile user exploits the energy supplied by the access point and forwarded by the relay to transmit its own data back to the access point, again with the helping of the relay. Here, the effect of various system parameters, including power‐splitting factor and the power‐to‐noise ratio on the system performance, is rigorously studied, with closed‐form expressions for the outage probability and system throughput as the results. Furthermore, we figure out the optimal power‐splitting ratio at which the information throughput from the user to the AP is maximized, subject to the constraint on the transmitting power at the access point. All above analytical results are also supported by Monte Carlo simulation.     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Superradiant Emission from Coherent Excitons in van Der Waals Heterostructures

Recent advancements in isolation and stacking of layered van der Waals materials have created an unprecedented paradigm for demonstrating varieties of 2D quantum materials. Rationally designed van der Waals heterostructures composed of monolayer transition-metal dichalcogenides (TMDs) and few-layer hBN show several unique optoelectronic features driven by correlations. However, entangled superradiant excitonic species in such systems have not been observed before. In this report, it is demonstrated that strong suppression of phonon population at low temperature results in a formation of a coherent excitonic-dipoles ensemble in the heterostructure, and the collective oscillation of those dipoles stimulates a robust phase synchronized ultra-narrow band superradiant emission even at extremely low pumping intensity. Such emitters are in high demand for a multitude of applications, including fundamental research on many-body correlations and other state-of-the-art technologies. This timely demonstration paves the way for further exploration of ultralow-threshold quantum-emitting devices with unmatched design freedom and spectral tunability.     

增加折叠电流保护的电路

对许多需要数安培供电电流的应用而言，三端输出可调线性稳压器有易用．低成本和完全片上过载保护等特点，如美国国家半导体公司的LM317。增加数个元器件可以使三端稳压器具备一种高速度的短路限流能力，从而提高可靠性。限流器可将最大输出电流限制在一个安全的恒定水平IMAX上，避免稳压器的损坏。当出现一个故障状况时，传输晶体管上的功耗近似于VIN×IMAX。要让设计的稳压器能承受过载，就需要谨慎地选择元器件的额定值（经常是留了过大的余地），除非可以在故障发生时降低或折叠（foldback）输出电流。     

3GPP LTE‐Assisted Wi‐Fi‐Direct: Trial Implementation of Live D2D Technology

This paper is a first‐hand summary on our comprehensive live trial of cellular‐assisted device‐to‐device (D2D) communications currently being ratified by the standards community for next‐generation mobile broadband networks. In our test implementation, we employ a full‐featured 3GPP LTE network deployment and augment it with all necessary support to provide real‐time D2D connectivity over emerging Wi‐Fi‐Direct (WFD) technology. As a result, our LTE‐assisted WFD D2D system enjoys the required flexibility while meeting the existing standards in every feasible detail. Further, this paper provides an account on the extensive measurement campaign conducted with our implementation. The resulting real‐world measurements from this campaign quantify the numerical effects of D2D functionality on the resultant system performance. Consequently, they shed light on the general applicability of LTE‐assisted WFD solutions and associated operational ranges.     

Dihydroazulene Photoswitch Operating in Sequential Tunneling Regime: Synthesis and Single‐Molecule Junction Studies

Molecular switches play a central role for the development of molecular electronics. In this work it is demonstrated that the reproducibility and robustness of a single‐molecule dihydroazulene (DHA)/vinylheptafulvene (VHF) switch can be remarkably enhanced if the switching kernel is weakly coupled to electrodes so that the electron transport goes by sequential tunneling. To assure weak coupling, the DHA switching kernel is modified by incorporating p‐MeSC₆H₄ end‐groups. Molecules are prepared by Suzuki cross‐couplings on suitable halogenated derivatives of DHA. The synthesis presents an expansion of our previously reported bromination–elimination–cross‐coupling protocol for functionalization of the DHA core. For all new derivatives the kinetics of DHA/VHF transition has been thoroughly studied in solution. The kinetics reveals the effect of sulfur end‐groups on the thermal ring‐closure of VHF. One derivative, incorporating a p‐MeSC₆H₄ anchoring group in one end, has been placed in a silver nanogap. Conductance measurements justify that transport through both DHA (high resistivity) and VHF (low resistivity) forms goes by sequential tunneling. The switching is fairly reversible and reenterable; after more than 20 “ON‐OFF” switchings, both DHA and VHF forms are still recognizable, albeit noticeably different from the original states.     

建立精密的直流浮动电流源

尽管有源滤波器的理论家和设计者都对GIC（通用阻抗变换器）非常熟悉，但一般模拟人员对它并不了解。一个单端口有源电路一般包括低成本运放、电阻和电容，GIC将容抗转换为感抗，因而可以替代滤波器中以RLC传输函数描述的电感。另外，GIC输入阻抗方程的灵活性允许进行虚拟阻抗的设计，这在实际元器件中是不存在的，例如依赖频率的电阻。GIC是30年前推出的，已广泛应用于交流电路和有源滤波电路。     

Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation

This work is dealing with the influence of surface treatment on ohmic contacts to hexagonal N-type SiC with medium doping level. The contact materials were Ni and Ni₂Si. The structures had to be annealed at high temperatures in order to reach ohmic behavior. A number of surface treatment methods were tested: wet cleaning, plasma etching, intentional oxidation with etching, H₂ annealing and their combinations. After some types of cleaning, the SiC surface was immediately analysed using the XPS method. The results of the analyses showed that the composition of the surface was not much influenced by these treatments. At lower annealing temperatures (approx. up to 850 °C) the prepared contacts showed Schottky behavior with large scatter of parameters. After annealing at approx. 960 °C, where the onset of ohmic behavior is expected, the structures were truly ohmic and of good parameters. Cleaning methods had just a negligible influence on the electrical parameters of the ohmic contacts. An explanation for these observed facts is suggested: Although - already on the basis of the XPS results - we could speak about a negligible influence of the cleaning onto the contact parameters, there might come across also other mechanisms coming from interaction of contact materials with SiC, which caused similar behavior of ohmic contacts on differently treated surfaces.     

Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In

Thermoelectric effect spectroscopy and photoluminescence techniques were used to study the defect levels in samples from three crystals of CdTe:In grown by the vertical gradient freeze method. The main goal of the investigation was to study defects, which strongly trap charge carriers or act as recombination centers in order to eliminate them from the technological process. The main difference among detecting and non-detecting samples was the absence of electron traps with a very high capture cross-section and energy 0.6 eV to 0.7 eV, which act as lifetime killers even at low concentrations. Recently published ab initio calculations show a complex of Te antisite and Cd vacancy within this energy range.