Experimental and modeling approaches of MR behaviors under large step strains

Rheological properties of MR fluids under large step strain shear are presented in this paper. The experiments were carried out using a rheometer with parallel-plate geometry. Under the large step strain shear, MR fluids behave as nonlinear viscoelastic properties, where the stress relaxation modulus, G(t, γ), shows a decreasing trend with step strain. The experimental results indicate that G(t, γ) obeys time-strain separability. Thus, a mathematical form based on finite exponential serials is proposed to predict MR behavior. In this model, G(t, γ) is represented as the product of a linear stress relaxation, G(t), and the damping function, h(γ), i.e. G(t, γ)=G(t) h(γ). G(t) is simply represented as a three-parameter exponential serial and h(γ) has a sigmoidal form with two parameters. The parameters are identified by adopting an efficient optimization method proposed by Stango et al. The comparison between the experimental results and the model-predicted values indicates that this mathematical model can accurately predict MR behavior.     

State of polarization changes: Classification and measurement

We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations.     

Thermodynamic stability of GaInSb,InAsSb, and GaInP epitaxial films

The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the ranges of spinodal decomposition and lowers its critical temperature. The introduction of the phenomenological parameter into Matthews-Blakeslee formula makes it possible to reach a satisfactory agreement between theoretically calculated values of critical thickness of epitaxial films and the experimental data.     

A 1.5-V 45-mW direct-conversion WCDMA receiver IC in 0.13-/spl mu/m CMOS

A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth-order baseband channel select filters with programmable gain. Quadrature local oscillator (LO) signals are generated on chip in a frequency divider flip-flop. An external interstage filter between the LNAs rejects transmitter leakage to relax demodulator linearity requirements. A low-voltage demodulator topology improves linearity as well as demodulator output pole accuracy. The active-RC baseband filter uses a programmable servo loop for offset compensation and provides an adjacent channel rejection of 39 dB. Programmable gain over 71-dB range in 1-dB steps is merged with the filter to maximize dynamic range. An automatic on-chip frequency calibration scheme provides better than 1.5% corner frequency accuracy. The receiver is integrated in a 0.13-/spl mu/m CMOS process with metal-insulator-metal (MIM) capacitors. Measured receiver performance includes a 6.5-dB noise figure, IIP2 of +27 dBm, and IIP3 of -8.6 dBm. Power consumption is 45 mW.     

Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge.     

经有机交联剂活化的低相对分子质量聚合物在墨西哥湾南部水波及矿场的应用

墨西哥南部地区面临的挑战之一是水管理.油流中的水增加了其处理费用,导致结垢,降低了采油量,最终关井(与修井费用有关).甚至当产层中仍然含有大量可采油气时,也常常将这些层废弃以避免产水.虽然天然裂缝对油流有积极的作用,但它们也促进了由锥进效应或油气产层和其上或下层段之间的高渗透薄夹层引起的水或气的流动.如果这些油层产水,就会很快影响其生产能力.另一个必须解决的问题是:边水通过断层、天然裂缝等流动引起的早期水突破.本文将讨论墨西哥南部使用经有机交联剂活化的低相对分子质量聚合物的实例,介绍候选对象的选择过程、总体作业设计、实验室试验结果等,以及在这一地区进行的降低产水量处理.实例中包括衰竭、高度裂缝性油藏.     

Performance and Commercial Application of the Promoter LCC-A for Maximization of Propylene Yield

1 Introduction Propylene as an important feedstock for organic chemicals is mainly originated from steam cracking and catalytic cracking processes. During the FCC process the propylene content varies with the FCC catalyst and process technology adopted, resulting in significant difference in propylene concentration in the cracked product——LPG. The conventional FCC pro- cess generally gives a propylene yield of around 4%, while the FCC process with maximization of propylene yield can in…     

Organic Nanoparticles: Preparation,Self‐Assembly,and Properties

The strong tendency of organic nanoparticles to rapidly self‐assemble into highly aligned superlattices at room temperature when solution‐cast from dispersions or spray‐coated directly onto various substrates is described. The nanoparticle dispersions are stable for years. The novel precipitation process used is believed to result in molecular distances and alignments in the nanoparticles that are not normally possible. Functional organic light‐emitting diodes (OLEDs)—which have the same host–dopant emissive‐material composition—with process‐tunable electroluminescence have been built with these nanoparticles, indicating the presence of novel nanostructures. For example, only changing the conditions of the precipitation process changes the OLED emission from green light to yellow.