全文获取类型
收费全文 | 18462篇 |
免费 | 289篇 |
国内免费 | 17篇 |
专业分类
电工技术 | 241篇 |
综合类 | 9篇 |
化学工业 | 3604篇 |
金属工艺 | 280篇 |
机械仪表 | 310篇 |
建筑科学 | 1108篇 |
矿业工程 | 109篇 |
能源动力 | 515篇 |
轻工业 | 1392篇 |
水利工程 | 177篇 |
石油天然气 | 225篇 |
武器工业 | 1篇 |
无线电 | 1101篇 |
一般工业技术 | 2907篇 |
冶金工业 | 4177篇 |
原子能技术 | 163篇 |
自动化技术 | 2449篇 |
出版年
2022年 | 145篇 |
2021年 | 238篇 |
2020年 | 211篇 |
2019年 | 255篇 |
2018年 | 272篇 |
2017年 | 260篇 |
2016年 | 327篇 |
2015年 | 239篇 |
2014年 | 380篇 |
2013年 | 1101篇 |
2012年 | 664篇 |
2011年 | 871篇 |
2010年 | 674篇 |
2009年 | 663篇 |
2008年 | 859篇 |
2007年 | 871篇 |
2006年 | 685篇 |
2005年 | 719篇 |
2004年 | 559篇 |
2003年 | 570篇 |
2002年 | 509篇 |
2001年 | 329篇 |
2000年 | 301篇 |
1999年 | 303篇 |
1998年 | 316篇 |
1997年 | 301篇 |
1996年 | 301篇 |
1995年 | 333篇 |
1994年 | 267篇 |
1993年 | 304篇 |
1992年 | 272篇 |
1991年 | 164篇 |
1990年 | 237篇 |
1989年 | 283篇 |
1988年 | 204篇 |
1987年 | 215篇 |
1986年 | 211篇 |
1985年 | 265篇 |
1984年 | 258篇 |
1983年 | 227篇 |
1982年 | 217篇 |
1981年 | 213篇 |
1980年 | 175篇 |
1979年 | 187篇 |
1978年 | 176篇 |
1977年 | 177篇 |
1976年 | 148篇 |
1975年 | 178篇 |
1974年 | 165篇 |
1973年 | 133篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
Redlich Allison D.; Kulish Richard; Steadman Henry J. 《Canadian Metallurgical Quarterly》2011,17(3):394
Over the past decade, knowledge on false confessions has grown tremendously. However, a similar knowledge base on true confessions has not. In the present study, independent, self-reported true and false confession experiences of persons with serious mental illness were compared. In addition to examining the crimes and police questioning that led to the true or false confession, we investigated the reasons behind the confessions and the eventual case outcomes. We found that, in comparison to true confessors (n = 30), false confessors (n = 35) were questioned more times, took longer to confess, perceived the evidence against them to be weaker, and reported significantly more external pressure and less internal pressure. Moreover, of those participants who were convicted, false confessors were four times more likely to receive a prison sentence than true confessors. (PsycINFO Database Record (c) 2011 APA, all rights reserved) 相似文献
102.
In all eukaryotes, the Golgi apparatus is the main site of protein glycosylation. It is widely 相似文献
103.
Richard M. LindstromEphraim Fischbach John B. BuncherJere H. Jenkins Andrew Yue 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2011,659(1):269-271
We report the results of an improved experiment aimed at determining whether the half-life (T1/2) of 198Au depends on the shape of the source. In this experiment, the half-lives of a gold sphere and a thin gold wire were measured after each had been irradiated in the NIST Center for Neutron Research. In comparison to an earlier version of this experiment, both the specific activities of the samples and their relative surface/volume ratios have been increased, leading to an improved test for the hypothesized self-induced decay (SID) effect. We find T1/2(sphere)/T1/2(wire)=(0.9993±0.0002), which is compatible with no SID effect. 相似文献
104.
105.
106.
107.
108.
Richard M. Karp 《Journal of Computer and System Sciences》2011,77(1):122-128
In this paper we develop a framework for designing and validating heuristic algorithms for NP-hard problems arising in computational biology and other application areas. We introduce two areas of current research in which we are applying the framework: implicit hitting set problems and analysis of protein–protein interaction networks, with emphasis on a specific problem in each area: multi-genome alignment and colorful connected graph detection. 相似文献
109.
110.
Zs. T
kei F. Iacopi O. Richard J. Waeterloos S. Rozeveld E. Beach B. Mebarki T. Mandrekar S. Guggilla K. Maex 《Microelectronic Engineering》2003,70(2-4):352-357
Barrier integrity of Ta-films deposited using the enhanced coverage by re-sputtering (EnCoRe1) barrier was investigated on untreated surfaces of blanket porous SiLK, 2 semiconductor dielectric (developmental version 7, hereinafter v7). Barrier integrity of a bi-layer EnCoRe Ta(N)/Ta film was studied on single damascene lines using v7 and porous SiLK semiconductor dielectric (developmental version 9, hereinafter v9). On blanket wafers more than 30 nm barrier thickness is necessary to achieve complete pore sealing. Analysis of the sheet resistance showed that when tantalum is deposited, a low resistivity -phase is nucleated on the low-k surface. When deposited onto single damascene structures, EnCoRe Ta(N)/Ta is successful in providing a continuous metallic barrier layer over v7 and v9 semiconductor dielectric lines. 相似文献