Outcomes related to burn-related child abuse: a case series

Nationally, approximately 10% of child abuse cases involve burning, and up to 20% of pediatric burn admissions involve abuse or neglect. Historically, these cases have been more difficult to prosecute than nonburn cases for multiple reasons. Between 1995 and 1999, there were 285 pediatric (under 18) patients admitted to the Spectrum Health Regional Burn Center. Of these cases, 18 of the alleged perpetrators were legally investigated for suspicion of child abuse, and 7 received punitive sentences. We found that men tended to be prosecuted and convicted more often than women and that cases involving multiple instances of injury tended to be prosecuted more frequently. Similarly, we found that cases involving more severe injuries tended to be prosecuted more successfully. There are many psychological and social factors involved in handling burn abuse cases. However, by successful prosecution of these crimes, victims tend to fare better both socially and psychologically.     

Intensive filial therapy with child witnesses of domestic violence: A comparison with individual and sibling group play therapy.

The rationale for utilizing filial therapy as a treatment intervention with child witnesses of domestic violence while residing with their mothers in a shelter facility is explored and the effectiveness of an intensive 12-session filial therapy parent training group, conducted within 2-3 weeks, is described (n=11; aged 4-10 yrs). Results of analysis of covariance revealed that child witnesses in the experimental group significantly reduced behavior problems prevalent in child witnesses and significantly increased their self-concept as compared to child witnesses in the non-treatment comparison group. In addition, t-test results showed that mothers who facilitated treatment of the experimental group scored significantly higher after training on both their attitudes of acceptance and their empathic behavior. Comparative analysis revealed that intensive filial therapy as facilitated by the children's mothers was as effective in reducing behavior problems as was intensive individual play therapy and intensive sibling group play therapy as facilitated by professionally trained therapists. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Imaging the domain pattern of the canted magnetization state in Co/Pt multilayer films

The exact magnetization pattern of magnetic films close to a spin-reorientation transition is difficult to analyze due to the intrinsically three-dimensional (3d) variation of the orientation of the local magnetization. We present a technique how this can be performed, based on the analysis of high quality 2d polarization maps from a single scanning electron microscope with polarization analysis (SEMPA) measurement with tilted sample. The key tool is the statistical distribution of all occurring polarization doublets, visualized in a 2d histogram plot. From the shape of the distribution the type of transition—canted-phase, or coexisting phases—can be inferred. For the canted-phase state, the canting angle can be accurately determined from geometrical considerations. With help of the histogram the image data can be analyzed and the three components of the magnetization can be calculated for most points of the image. For a Co/Pt multilayer film we found a cone state. The magnetization forms a complex pattern consisting of out-of-plane domains while the in-plane magnetization shows a maze pattern.     

Flash-lamp annealing of semiconductor materials—Applications and process models

Flash-lamp annealing (FLA) on a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The process imposes time varying through-thickness temperature profiles on the substrates being processed, and consequently thermal stresses. A combined thermal and optical model has been developed to predict the substrate temperature distribution and this model has been linked to a structural model to compute stresses and deflections. The paper shows how these models can be used to explore process conditions in flash lamp annealing, with particular regard to the annealing of ion implants in silicon and the crystallization of amorphous silicon layers on glass substrates.     

N-particle dynamics of the Euler equations for planar diffeomorphisms

The Euler equations associated with diffeomorphism groups have received much recent study because of their links with fluid dynamics, computer vision, and mechanics. In this article, we consider the dynamics of N point particles or “blobs” moving under the action of the Euler equations associated with the group of diffeomorphisms of the plane in a variety of different metrics. This dynamical system is already in widespread use in the field of image registration, where the point particles correspond to image landmarks, but its dynamical behavior has not previously been studied. The 2-body problem is always integrable, and we analyze its phase portrait under different metrics. In particular, we show that 2-body capturing orbits (in which the distances between the particles tend to 0 as t  → ∞) can occur when the kernel is sufficiently smooth and the relative initial velocity of the particles is sufficiently large. We compute the dynamics of these “dipoles” with respect to other test particles, and supplement the calculations with simulations for larger N that illustrate the different regimes.     

High Throughput Primer Walking of cDNA Clones

Primer walking of cloned DNA is a standard research tool. It has been used in the past to determine the sequence of individual clones of interest. With the expansion of DNA sequencing capacity the need to be able to walk larger numbers of clones has become necessary. Our laboratory is a mid-sized genomics facility. In conjunction with the Advanced Biomedical Computing Center (ABCC) we have developed methods for automating the primer selection, DNA sequencing, contig assembly and sequence analysis for clones arrayed in microtiter format. This approach has allowed us to walk 475 clones (five microtiter plates) selected from a cDNA library.     

Mixing Center of a Channel

For longitudinally uniform stretches of waterways there is a mixing center for the across-channel location of a steady point source in steady flow, such that complete mixing is achieved as soon as possible and there is no concentration overshoot at either of the two shorelines. A mathematical definition of the mixing center is the zero of the first oscillatory cross-channel diffusion mode. With the shorelines plus four interior data points across the channel, the starting estimate for the mixing center suffices to keep peak shoreline concentrations to within 6% of optimal. For comparison, a source at mid flow gives 18% shoreline concentration overshoot in the test case. Should very high precision be required, the Appendix gives an iterative construction that converges to the first oscillatory diffusion mode.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.