A model material approach to the study of fracture process zone of quasi-brittle materials

A new approach to study the fracture of quasi-brittle materials is introduced: the design and testing of model materials. By model material is understood a material with enlarged microstructure and which material parameters, such as stacking and mechanical properties of particles and cohesion force, can be fully controlled. In this paper a first example to the model materials approach is presented, consisting in 5 mm steel particles bonded in a precise stacking with an epoxy-based glue. It is shown how it is possible to correlate the different fracture mechanisms and ultimate peak load of the model material to the particle pair force and to the fracture process zone size. It is also seen how a quasi-brittle behaviour is produced in the presence of mechanisms that induced the crack to shift fracture planes, that is, in presence of energy dissipative mechanisms.     

Iterative method for the design of DFT filter Bank

Multirate adaptive filters have numerous advantages such as low computational load, fast convergence, and parallelism in the adaptation. Drawbacks when using multirate processing are mainly related to aliasing and reconstruction effects. These effects can be minimized by introducing appropriate problem formulation and employing sophisticated optimization techniques. In this paper, we propose a formulation for the design of a filter bank which controls the distortion level for each frequency component directly and minimizes the inband aliasing and the residual aliasing between different subbands. The advantage of this problem formulation is that the distortion level can be weighted for each frequency depending on the particular practical application. A new iterative algorithm is proposed to optimize simultaneously over both the analysis and the synthesis filter banks. This algorithm is shown to have a unique solution for each iteration. For a fixed distortion level, the proposed algorithm yields a significant reduction in both the inband aliasing and the residual aliasing levels compared to existing methods applied to the numerical examples.     

Structure determination of CaMgGeO4

The crystal structure of CaMgGeO₄ is described. CaMgGeO₄, M_r = 200.9, orthorhombic, Pnam, A = 11.285(5) Å, B = 5.016(2) Å, C = 6.435(2) Å, V = 364.36 ų, Dx = 3.664 Mg/m³.λ(MoK_a = 0.71069 Å, F(000) = 384, room temperature, final R = 0.045 for 1752 observed reflections. The structure is isomorphous with CaMgSiO₄ (monticellite).     

Energy efficiency, carbon emissions and economic development in Venezuela

Venezuela's vast natural resource base has largely shaped the nation's economic and energy-use patterns. Major opportunities exist for improving the efficiency of energy use in Venezuela and, consequently, restraining the growth of energy-related carbon emissions. This paper presents a detailed report of one potential development path for Venezuela and estimates the ensuing levels of energy demand and CO₂ emissions associated with pursuing this path through the year 2025. The results indicate that by adopting a development strategy that incorporates structural changes in the economy, fuel-switching measures and improved end-use efficiencies, Venezuela can introduce energy efficiency and carbon restraints as part of its economic development process.     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.     

Experiments of Fast Learning with High Order Boltzmann Machines

This work reports the results obtained with the application of High Order Boltzmann Machines without hidden units to construct classifiers for some problems that represent different learning paradigms. The Boltzmann Machine weight updating algorithm remains the same even when some of the units can take values in a discrete set or in a continuous interval. The absence of hidden units and the restriction to classification problems allows for the estimation of the connection statistics, without the computational cost involved in the application of simulated annealing. In this setting, the learning process can be sped up several orders of magnitude with no appreciable loss of quality of the results obtained.