A 1-V 10.7-MHz switched-opamp bandpass /spl Sigma//spl Delta/ modulator using double-sampling finite-gain-compensation technique

A 1 V switched-capacitor (SC) bandpass sigma-delta (/spl Sigma//spl Delta/) modulator is realized using a high-speed switched-opamp (SO) technique with a sampling frequency of up to 50 MHz, which is improved ten times more than prior 1 V SO designs and comparable to the performance of the state-of-the-art SC circuits that operate at much higher supply voltages. On the system level, a fast-settling double-sampling SC biquadratic filter architecture is proposed to achieve high-speed operation. A low-voltage double-sampling finite-gain-compensation technique is employed to realize a high-resolution /spl Sigma//spl Delta/ modulator using only low-DC-gain opamps to maximize the speed and to reduce power dissipation. On the circuit level, a fast-switching methodology is proposed for the design of the switchable opamps to achieve a switching frequency up to 50 MHz. Implemented in a 0.35-/spl mu/m CMOS process (V/sub TP/=0.82 V and V/sub TN/=0.65 V) and at 1 V supply, the modulator achieves a measured peak signal-to-noise-and-distortion ratio (SNDR) of 42.3 dB at 10.7 MHz with a signal bandwidth of 200 kHz, while dissipating 12 mW and occupying a chip area of 1.3 mm/sup 2/.     

The measurement of solar array discharges in a simulated spaceenvironment

A spacecraft in a plasma builds up charge on all the dielectric surfaces and interfaces. Once the net charge exceeds the dielectric breakdown of the material, a discharge occurs. One of the more susceptible pieces of equipment is the antenna/receiver system. The radiated E-field may be strong enough to create an ambiguous signal which may be misinterpreted by the system electronics and cause a system malfunction. A technique is developed to monitor the radiated E-field of materials discharging in an electron environment, using vacuum chambers for measuring the material discharges which are made of highly reflective materials. These chambers affect the radiated E-field due to multiple reflections from the walls. The technique developed defines a method for correcting the effects caused by the measurement facilities. The methodology is: monitor the radiated E-field with a broadband dipole antenna, and digitize the radiated signal as a function of time. Determine the frequency response of the radiated E-field using an FFT algorithm. Measure the transmission and reflection characteristics of the two-port network inside the measurement chamber, and determine the impedance network from the measured E-parameters across the frequency band of interest. Transform the measured E-field frequency response through the impedance network to obtain the frequency response of the actual radiated discharge current. Find the inverse FFT of this response to obtain the actual radiated discharge current response. This technique aids in the prediction of the E-field coupling into receive antennas on-board actual satellites     

An optical instrumentation using a sensor with a sensordummyagainst noises on sensor and transmission line

This short paper discusses the method of effectively canceling equal status normal mode noise not only on a sensor line but also on a transmission line of an optical instrument using a sensor with a sensordummy resistance     

High-frequency analysis of the Ellipticus antenna

Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz     

1/f noise sources

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10^-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices     

Non-resonant RF and microwave response: A novel technique for the characterization of superconducting materials

When examined using continuous wave electron paramagnetic resonance and nuclear magnetic resonance spectrometers, the highT _c superconductors give rise to intense, low field, ‘non-resonant’ absorption signals in the superconducting state. This phenomenon can be used as a highly sensitive, contactless technique for the detection and characterization of superconductivity even in samples containing only minute amounts of the superconducting phase. Further, it can also be applied to the determination of material parameters of interest such asJ _c andH _c2 in addition to being a powerful way of distinguishing between weak-link superconductivity and bulk superconductivity. The details of these aspects are discussed.     

Metal diffraction gratings as laser power or energy dividers

The authors survey published results on the application of metal diffraction gratings as laser power or energy dividers when the laser beam is split into two approximately equal pans. The normal incidence of laser radiation on metal diffraction gratings of various profiles in the case of three propagating diffraction orders n=0, ±1 is discussed, along with the case of oblique incidence with only two propagating diffraction orders n=0 and n =–1.Translated from Izmeritel'naya Tekhnika, No. 2, pp. 22–26, February, 1994.     

Effects of error variation in means of measurement on reliability parameters in engineering-system monitoring

A method is given for calculating the monitoring reliability parameters (MRP) for an engineering system with allowance for the drift in the measurement error of the means of measurement (MM). The approach is based on introducing a biased MM error distribution into the traditional formulas for the conditional probabilities of spurious and unobserved failure. The bias at the center of the distribution is determined by the systematic error at the given instant. An example is given to illustrate the performance in MRP calculation.Translated from Izmeritel'naya Tekhnika, No. 1, pp. 12–13, January, 1994.     

Effect of pulse time gate on CsI(T1) light output

The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval.