International Working Group on Assurance Cases (for Security)

Critical systems are aptly named - from electric power to water and gas to the telephone system and the Internet, they're all critical to some aspect of our daily lives. We're a networked society and as such, it's important to both know whether critical systems are trustworthy and be able to communicate, review, and debate the level of trust achieved in them. In the safety domain, explicit safety cases are increasingly required by law, regulations, and standards. In this article, we outline what a small, international group of experts, spanning various disciplines in safety, security, reliability, and critical infrastructure, been doing with the International Working Group on Assurance Cases (for Security), what we hope to achieve, and where we go next.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Modeling of laser keyhole welding: Part I. mathematical modeling,numerical methodology,role of recoil pressure,multiple reflections,and free surface evolution

A three-dimensional laser-keyhole welding model is developed, featuring the self-consistent evolution of the liquid/vapor (L/V) interface together with full simulation of fluid flow and heat transfer. Important interfacial phenomena, such as free surface evolution, evaporation, kinetic Knudsen layer, homogeneous boiling, and multiple reflections, are considered and applied to the model. The level set approach is adopted to incorporate the L/V interface boundary conditions in the Navier-Stokes equation and energy equation. Both thermocapillary force and recoil pressure, which are the major driving forces for the melt flow, are incorporated in the formulation. For melting and solidification processes at the solid/liquid (S/L) interface, the mixture continuum model has been employed. The article consists of two parts. This article (Part I) presents the model formulation and discusses the effects of evaporation, free surface evolution, and multiple reflections on a steady molten pool to demonstrate the relevance of these interfacial phenomena. The results of the full keyhole simulation and the experimental verification will be provided in the companion article (Part II).     

Constant thrust programming for a multistage rocket flown in vacuum with a given initial/final thrust-to-weight ratio in an arbitrary stage

The burn time and burnout velocity of a multistage rocket flown vertically in vacuum with constant thrust tangential to the flight path and a prescribed initial/final thrust-to-weight ratio in an arbitrary stage have been determined. The present paper also deals with optimal staging under given conditions of flight.     

Flotation machine design: impeller—stator interaction

The separate contributions of impellers and stators to suction are studied by means of interaction models. From these, suction can be predicted when interchangeable components are used in any combination, and in either direction of impeller rotation. Methods are devised by which numerical values of the impeller and stator terms can be simply assigned. The resulting model provides good agreement with experiment. The influence of variability in component geometry is reflected in the model parameters. Possible applications of the model are suggested.     

Adaptive cell division for ray tracing

In ray tracing the two most commonly used data structures are the octree and uniform cell division. The octree structure allows efficient adaptive subdivision of space, while taking care of the spatial coherence of the objects in it; however, the tree structure locating the next node in the path of a ray is complex and time consuming. The cell structure, on the other hand, can be stored in a three-dimensional array, and each cell can be efficiently accessed by specifying three indices. However, such a uniform cell division does not take care of object coherence. The proposed data structure combines the positive features of the above data structures while minimising their disadvantages. The entire object space is implicitly assumed to be a three-dimensional grid of cells. Initially, the entire object space is a single voxel which later undergoes “adaptive cell division.” But, unlike in the octree structure, where each voxel is divided exactly at the middle of each dimension, in adaptive cell division, each voxel is divided at the nearest cell boundary. The result is that each voxel contains an integral number of cells along each axis. Corresponding to the implicit cell division we maintain a three-dimensional array, with each array element containing the voxel number which is used to index into the voxel array. The voxel array is used to store information about the structure of each voxel, in particular, the objects in each voxel. While a ray moves from one voxel to another we always keep track of the cell through which the ray is currently passing. Since only arrays are involved in accessing the next voxel in the path of the ray, the operation is very efficient.