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21.
This paper presents an overview of the image analysis techniques in the domain of histopathology, specifically, for the objective of automated carcinoma detection and classification. As in other biomedical imaging areas such as radiology, many computer assisted diagnosis (CAD) systems have been implemented to aid histopathologists and clinicians in cancer diagnosis and research, which have been attempted to significantly reduce the labor and subjectivity of traditional manual intervention with histology images. The task of automated histology image analysis is usually not simple due to the unique characteristics of histology imaging, including the variability in image preparation techniques, clinical interpretation protocols, and the complex structures and very large size of the images themselves. In this paper we discuss those characteristics, provide relevant background information about slide preparation and interpretation, and review the application of digital image processing techniques to the field of histology image analysis. In particular, emphasis is given to state-of-the-art image segmentation methods for feature extraction and disease classification. Four major carcinomas of cervix, prostate, breast, and lung are selected to illustrate the functions and capabilities of existing CAD systems.  相似文献   
22.
Neural Computing and Applications - To increase the quality of loans provision and reduce the risk involved in this process, several credit scoring models have been developed and utilized to...  相似文献   
23.
Abstract— The development of a flexible, rewritable, non‐volatile memory (NVM) that is implemented on a standard, low‐temperature a‐Si:H process without additional mask steps is reported. This NVM is a part of a flexible‐display system. Each NVM cell is composed of differentially configured thin‐film‐transistors (TFTs). The cell reads out one of two stable states depending on the relative threshold voltages of the differentially configured TFTs. Information is stored in each cell by increasing the threshold voltage of one differential TFT or the other, utilizing the well‐known electrical‐stress degradation intrinsic to a‐Si:H TFTs. The stored information is retained indefinitely with no applied power. A test array of individually addressable NVM cells has been successfully fabricated and tested on flexible stainless‐steel substrates. Read and write operation, as well as preliminary reliability measurements, are described. The design is readily scalable to large memory arrays.  相似文献   
24.
Both common coupling and pointer variables can exert a deleterious effect on the quality of software. The situation is exacerbated when global variables are assigned to pointer variables, that is, when an alias to a global variable is created. When this occurs, the number of global variables increases, and it becomes considerably harder to compute quality metrics correctly. However, unless aliasing is taken into account, variables may incorrectly appear to be unreferenced (neither defined nor used), or to be used without being defined. These ideas are illustrated by means of a case study of common coupling in the Linux kernel.
Stephen R. SchachEmail:
  相似文献   
25.
In this paper we compare the ability of a fuzzy neural network and a common back-propagation network to classify odour samples that were obtained by an electronic nose employing semiconducting oxide conductometric gas sensors. Two different sample sets have been analysed: first, the aroma of three blends of commercial coffee, and secondly, the headspace of six different tainted-water samples. The two experimental data sets provide an excellent opportunity to test the ability of a fuzzy neural network due to the high level of sensor variability often experienced with this type of sensor. Results are presented on the application of three-layer fuzzy neural networks to electronic nose data. They demonstrate a considerable improvement in performance compared to a common back-propagation network.  相似文献   
26.
Abstract— A novel approach of modeling a‐Si:H TFTs with the industry‐standard BSIM3 compact model is presented. The described approach defines the a‐Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a‐Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a‐Si:H TFT is simulated inside SPICE to fit the simulated I‐V and C‐V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.  相似文献   
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Fracture toughness tests were conducted on a Ti-62222 (titanium alloy) sheet being considered for use in high temperature aircraft applications in the as received condition and after exposing the pre-cracked specimens to a sustained stress intensity, K, level between 55 and 60.5 MPa for 200 h at 350°C. It was concluded that the fracture toughness does not degrade as a result of exposure to high temperature and the K levels in this material. The tensile strength in the exposed condition also remained the same as in the as received condition.  相似文献   
29.
In the present investigation we explored possibilities of preparing mixed CdS–Bi2S3 composite thin films of nanodimensions using a single step surfactant facilitated electrochemical process from aqueous solutions containing different colloidal concentrations of CdS and Bi2S3 particles. As deposited composite thin films has been characterized on the basis of SEM, AFM and XRD studies for determination of their surface morphology, surface roughness and grain size. Photoelectrochemical characterization of these composite materials has been carried out on the basis of photopotential, current–voltage (IV) characteristics under dark and illumination conditions and photoaction spectral studies. Attempt has also been made to estimate the resistance of these composite materials towards their electrochemical corrosion. As prepared mixed (Cd,Bi)S composite semiconductor film exhibits substantial improvement in their photoelectrochemical properties.  相似文献   
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