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61.
Huiyuan Geng Takahiro Ochi Shogo Suzuki Masaaki Kikuchi Satoru Ito Junqing Guo 《Journal of Electronic Materials》2013,42(7):1999-2005
Bulk multifilled n- and p-type skutterudites with La as the main filler were fabricated using the spark plasma sintering (SPS) method. The thermoelectric properties and thermal stability of these skutterudites were investigated. It was found that the interactions among the filling atoms also play a vital role in reducing the lattice thermal conductivity of the multifilled skutterudites. ZT = 0.76 for p-type La0.8Ba0.01Ga0.1Ti0.1Fe3CoSb12 and ZT = 1.0 for n-type La0.3Ca0.1Al0.1Ga0.1In0.2Co3.75Fe0.25Sb12 skutterudites have been achieved. Furthermore, the differential scanning calorimetry (DSC) results show that there is no skutterudite phase decomposition till 750°C for the La0.8Ba0.01Ga0.1Ti0.1Fe3CoSb12 sample. The thermal stability of the La0.8Ba0.01Ga0.1Ti0.1Fe3CoSb12 skutterudite is greatly improved. Using the developed multifilled skutterudites, the fabricated module with size of 50 mm × 50 mm × 7.6 mm possesses maximum output power of 32 W under the condition of hot/cold sides = 600°C/50°C. 相似文献
62.
Mike Tien-Chien Lee Yu-Chin Hsu Ben Chen Masahiro Fujita 《Design Automation for Embedded Systems》1997,2(3-4):319-338
ATM switch, the core technology of an ATM networking system, is one of the major products in Fujitsu telecommunication business. However, current gate–level design methodology can no longer satisfy its stringent time–to–market requirement. It becomes necessary to exploit high–level methodology to specify and synthesize the design at an abstraction level higher than logic gates. This paper presents our prototyping experience on domain–specific high–level modeling and synthesis for Fujitsu ATM switch design. We propose a high–level design methodology using VHDL, where ATM switch architectural features are considered during behavior modeling, and a high–level synthesis compiler, MEBS, is prototyped to synthesize the behavior model down to a gate–level implementation. Since the specific ATM switch architecture is incorporated into both modeling and synthesis phases, a high–quality design is efficiently derived. The synthesis results shows that given the design constraints, the proposed high–level design methodology can produce a gate–level implementation by MEBS with about 15 percent area reduction in shorter design cycle when compared with manual design. 相似文献
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66.
R. Neveling H. Fujita F.D. SmitT. Adachi G.P.A. BergE.Z. Buthelezi J. CarterJ.L. Conradie M. CouderR.W. Fearick S.V. FörtschD.T. Fourie Y. FujitaJ. Görres K. HatanakaM. Jingo A.M. KrumbholzC.O. Kureba J.P. MiraS.H.T. Murray P. von Neumann-CoselS. O’Brien P. Papka I. PoltoratskaA. Richter E. Sideras-HaddadJ.A. Swartz A. TamiiI.T. Usman J.J. van ZylJ. Mabiala 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2012,662(1):101
67.
With recent advances in information and telecommunications technologies, a large range of digital content is distributed over the Internet. Whereas diverse licenses are provided to protect the content legally and have the advantage of offering authors many choices, the obstruction of smooth content distribution may occur if the relationships between licenses are not revealed because of differences between the restrictions imposed by each license. To activate digital content distribution, license interoperability must be revealed. In this paper, we propose a framework for formally examining license interoperability by using many-sorted first-order logic. We formalize five actual licenses and examine their interoperability to prove the effectiveness of our proposed framework. The results show that the framework reveals the relationships between licenses. 相似文献
68.
Satoru Okamoto 《机械工程与自动化:英文版》2014,(10):770-780
The tendency for air column resonance generation in structures with a constant volume behind a tube array like that of an exhaust gas economizer has been reported, but many points remain unclear with respect to the mechanism and conditions that generate acoustical resonance. When acoustical resonance is generated, in reality, prevention and suppression measures are implemented by inserting a baffle plate into the ducts through a process of trial and error. The purpose of this study is to clarify the mechanism of generation of acoustical resonance, and to establish an appropriate measure to prevent such resonance. Noise generated in an exhaust gas economizer was correlated with the flow inside the tube array and experimentally analyzed, and the mechanism for resonance generation was considered. In addition, the effectiveness of a baffle plate positioned in order to prevent resonance was investigated. We have successfully employed a single baffle plate to suppress resonance. 相似文献
69.
Yuta Fujita Akihiro Ametani Keisuke Nakamura Koichi Yamabuki 《Electrical Engineering in Japan》2014,188(1):36-45
This paper investigates the mutual grounding impedance between vertical grounding electrodes based on field measurements and FDTD simulations. In the case of vertical electrodes, the mutual impedance between the electrodes is almost completely independent of the electrode length, and thus the induced voltage is nearly constant as the electrode length becomes longer. This characteristic is different from that of an overhead conductor, where the electromagnetic‐induced voltage is proportional to the conductor length. The greater the separation distance between the electrodes, the smaller the induced voltage, as in the case of an overhead conductor. The propagation speed increases as the separation increases. It is found that the speed is not necessarily proportional to the inverse of the relative permittivity of the earth. 相似文献
70.
Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached ∼28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 × 10−3 e/atom (3.8 × 1012 cm−2) from G band shift in Raman spectra. 相似文献