Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.     

Analyzing the Boundary Thermal Resistance of Epitaxially Grown Fe<Subscript>2</Subscript>VAl/W Layers by Picosecond Time-Domain Thermoreflectance

To gain deep insight into the mechanism of phonon scattering at grain boundaries, we investigated the boundary thermal resistance by using picosecond pulsed-laser time-domain thermoreflectance for epitaxially grown W/Fe₂VAl/W films. By using radio-frequency magnetron sputtering, we prepared a series of the three-layer films whose Fe₂VAl thickness ranged from 1 nm to 37 nm. The fine oscillation of reflectivity associated with the top W layer clearly appeared in synchrotron x-ray reflectivity measurements, indicating a less obvious mixture of elements at the boundary. The areal heat diffusion time, obtained from the time-domain thermoreflectance signal in the rear-heating front-detection configuration, reduced rapidly in samples whose Fe₂VAl layer was thinner than 15 nm. The ～ 10% mismatch in lattice constant between Fe₂VAl and W naturally produced the randomly distributed lattice stress near the boundary, causing an effective increase of boundary thermal resistance in the thick samples, but the stress became homogeneous in the thinner layers, which reduced the scattering probability of phonons.     

Measurement of slowly varying component in phase error distribution of a large-channel-spacing arrayed-waveguide grating

It has been difficult to measure the phase error distribution of a large-channel-spacing arrayed-waveguide grating (AWG) with optical low coherence interferometry (OLCI). In this reported work OLCI was successfully used to measure the slowly varying component in the distribution of a 1 THz-spaced AWG that was the primary filter in an ultra-high-density multi/demultiplexer. The spectral sidelobe of the AWG can be reduced by using the component to achieve the lowest possible accumulated crosstalk in the multi/demultiplexer.     

Electron holographic 3-D nano-analysis of Au/TiO2 catalyst at interface

Three-dimensional (3-D) nanostructures of gold catalysts supported on TiO2 were analysed by electron holography and high-resolution electron microscopy. The contact angle of the gold particle on TiO2 tended to be >90 degrees in the case of gold particles with a size (height) of >4 nm and it tended to be <90 degrees for gold particles with a height of <2 nm. The change in morphology increases the perimeter at the Au/TiO2 interface as the particle size decreases. This change in 3-D structure should be attributed to a change in electronic structure at the interface. It was found that electron holography enabled 3-D analysis at the atomic level and was effective for analysing nanostructured particles.     

3D Micromolding of Arrayed Waveguide Gratings on Upconversion Luminescent Layers for Flexible Transparent Displays without Mirrors,Electrodes, and Electric Circuits

A new technique for the fabrication of arrayed waveguide gratings on upconversion luminescent layers for flexible transparent displays is reported. Ho³⁺‐ and Yb³⁺‐codoped NaYF₄ nanoparticles are synthesized by hydrothermal techniques. Transparent films consisting of two transparent polymers on the NaYF₄ nanoparticle films exhibit mechanical flexibility and high transparence in visible region. Patterned NaYF₄ nanoparticle films are fabricated by calcination‐free micromolding in capillaries. Arrayed waveguide gratings consisting of the two transparent polymers are formed on the patterned NaYF₄ nanoparticle films by micromolding in capillaries. Green and red luminescence is observed from the upconversion luminescent layers of the NaYF₄ nanoparticle films in the arrayed waveguide gratings under excitation at 980 nm laser light. Arrayed waveguide gratings on the upconversion luminescent layers are fabricated with Er³⁺‐doped NaYF₄ nanoparticles which can convert two photons at 850 and 1500 nm into single photon at 550 nm. These results demonstrate that flexible transparent displays can be fabricated by constructing arrayed waveguide gratings on upconversion luminescent layers, which can operate in nonprojection mode without mirrors, transparent electrodes, and electric circuits.     

On-chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT⁻¹ from room temperature to 500 °C and a low noise level of 9.45 nT Hz^−1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10⁻⁶ at room temperature and 2.3 × 10⁻⁶ at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.     

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed.     

A 14-ns 14-Mb CMOS DRAM with 300-mW active power

A 4-Mb high-speed DRAM (HSDRAM) has been developed and fabricated by using 0.7-μm L_eff CMOS technology with PMOS arrays inside n-type wells and p-type substrate plate trench cells. The 13.18-mm×6.38-mm chip, organized as either 512 K word×8 b or 1 M word×4 b, achieves a nominal random-access time of 14 ns and a nominal column-access time of 7 ns, with a 3.6-V V_cc and provision of address multiplexing. The high level of performance is achieved by using a short-signal-path architecture with center bonding pads and a pulsed sensing scheme with a limited bit-line swing. A fast word-line boosting scheme and a two-stage word-line delay monitor provide fast word-line transition and detection. A new data output circuit, which interfaces a 3.6-V V_cc to a 5-V bus with an NMOS-only driver, also contributes to the fast access speed by means of a preconditioning scheme and boosting scheme. Limiting the bit-line voltage swing for bit-line sensing results in a low power dissipation of 300 mW for a 60-ns cycle time