导电环接触电阻的改进测量方案

介绍了导电环接触电阻测量方法的现状,提出了在测量过程中防止导线缠绕的两种改进方案,通过分析验证,说明改进后的测量方案能够很好的完成导电环接触电阻的测量.     

n-Al2O3/Ni复合镀层的组织与滑动磨损性能研究

用电刷镀技术制得了镍基n-Al2O3复合镀层，并对镀层的滑动磨损性能进行了试验研究。纳米复合镀层的表面形貌比较细腻，镀层中纳米粒子分布均匀，与基质金属结合紧密。镀层显微硬度达到HV700，比快速镍镀层提高约40％。滑动磨损试验结果表明，随着纳米粒子含量的增大，镀层的耐磨性提高，摩擦系数也呈增大趋势；但当镀层中n-Al2O3粒子的超过2.56%(质量分数）时，镀层的耐磨性显著下降。纳米复合镀层的磨损机制以疲劳磨损为主，而快速镍底层以粘着磨损为主。     

乙醇电氧化的研究进展

简要地叙述了国内外乙醇电催化氧化的研究进展，着重介绍不同电极材料对乙醇电氧化的影响及目前所提山的机理，并对其可能的研究方向提出了建议。     

提高20t电弧炉炉衬寿命工艺实践

炉渣碱度、泡沫渣高度、吹氧角度、补炉方式等是影响20t电弧炉炉衬寿命的主要因素。为了提高炉衬寿命,莱钢炼钢厂采取了控制炉渣组成、泡沫渣全程埋弧操作、吹氧、喷补炉衬等多项措施,使炉衬寿命稳定在600炉次以上。     

A PLL clock generator with 5 to 10 MHz of lock range formicroprocessors

A microprocessor clock generator based on an analog phase-locked loop (PLL) is described for deskewing the internal logic control lock to an external system lock. This PLL is fully generated onto a 1.2-million-transistor microprocessor in 0.8-μm CMOS technology without the need for external components. It operates with a lock range from 5 to 110 MHz. The clock skew is less than 0.1 ns, with a peak-to-peak jitter of less than 0.3 ns for a 50-MHz system clock frequency     

浅析企业人才的"留"与"流"

文章分析了人才在企业管理和促进企业发展中的重要性,提出在人才招聘中应注意的三个方面因素,全方位分析了留住人才与人才流动之间的关系.     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress     

Highly active lanthanum doped nickel anode for solid oxide fuel cells directly fuelled with methane

Lanthanum doped nickel and YSZ composite anode (LaNi–YSZ) exhibited a greatly reduced polarization resistance and high performance for electrochemical oxidation of hydrogen and methane, which resulted from a fine anode structure with a high dispersion of nickel catalyst and a high catalytic activity towards methane.     

影响长廊阻抗式调压室配筋的几个因素分析

采用三维非线性有限元方法,对四川天全县干溪坡水电站调压室结构特性进行研究,并对几个影响配筋的因素进行敏感性分析,得出各个因素对配筋结果的影响,为调压室结构设计提供科学依据。