Thermal diffusion of lithium acceptors into ZnO crystals

Electron paramagnetic resonance (EPR) has been used to monitor the diffusion of lithium ions into single crystals of ZnO. The in-diffusion occurs when a crystal is embedded in LiF powder and then held in air at temperatures near 750°C for periods of time ranging up to 22 h. These added lithium ions occupy zinc sites and become singly ionized acceptors (because the material is initially n type). A corresponding reduction in the number of neutral shallow donors is observed with EPR. To monitor the lithium acceptors, we temporarily convert them to the EPR-active neutral acceptor state by exposure to laser light (325 nm or 442 nm) at low temperatures. Also, after each diffusion treatment, we monitor the EPR signal of singly ionized copper acceptors and the photo-induced EPR signal of neutral nitrogen acceptors. These nitrogen and copper impurities are initially present in the crystal, at trace levels, and are made observable by the thermal anneals. Infrared-absorption measurements at room temperature in the 2–10 μm region show that the concentration of free carriers decreases as lithium is added to the crystal. After 22 h at 750°C in the LiF powder, the free-carrier absorption is no longer present, and the crystal is semi-insulating.     

Low-energy electron-enhanced etching of HgCdTe

Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH₄ concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition.     

Layer-transfer process for silicon-on-insulator with improved manufacturability

We observe hydrogen platelet buildup in single-crystalline silicon caused by hydrogen-plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried-defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena and discuss applicability of the plasma hydrogenation to silicon-on-insulator (SOI) wafer fabrication by layer transfer.     

Effect of silver content on thermal fatigue life of Sn-xAg-0.5Cu flip-chip interconnects

The thermal fatigue properties of Sn-xAg-0.5Cu (x=1, 2, 3, and 4 in mass%) flip-chip interconnects were investigated to study the effect of silver content on thermal fatigue endurance. The solder joints with lower silver context (x=1 and 2) had a greater failure rate compared to those with higher silver content (x=3 and 4) in thermal fatigue testing. Cracks developed in the solders near the solder/chip interface for all joints tested. This crack propagation may be mainly governed by the nature of the solders themselves because the strain-concentrated area was similar for tested alloys independent of the silver content. From the microstructural observation, the fracture was a mixed mode, transgranular and intergranular, independent of the silver content. Higher silver content alloys (x=3 and 4) had finer Sn grains before thermal cycling according to the dispersion of the Ag₃Sn intermetallic compound, and even after the cycling, they suppressed microstructural coarsening, which degrades the fatigue resistance. The fatigue endurance of the solder joints was strongly correlated to the silver content, and solder joints with higher silver content had better fatigue resistance.     

Microstructure characterization of Sn-Ag solder joints between stud bumps and metal pads

The microstructure of the flip-chip solder joints fabricated using stud bumps and Pb-free solder was characterized. The Au or Cu stud bumps formed on Al pads on Si die were aligned to corresponding metal pads in the substrate, which was printed with Sn-3.5Ag paste. Joints were fabricated by reflowing the solder paste. In the solder joints fabricated using Au stud bumps, Au-Sn intermetallics spread over the whole joints, and the solder remained randomly island-shaped. The δ-AuSn, ε-AuSn₂, and η-AuSn₄ intermetallic compounds formed sequentially from the Au stud bump. The microstructure of the solder joints did not change significantly even after multiple reflows. The AuSn₄ was the main phase after reflow because of the fast dissolution of Au. In the solder joints fabricated using Cu stud bumps, the scallop-type Cu₆Sn₅ intermetallic was formed only at the Cu interface, and the solder was the main phase. The difference in the microstructure of the solder joints with Au and Cu stud bumps resulted from the dissolution-rate difference of Au and Cu into the solder.     

A Novel Formalism for Partially Defined Asynchronous Feedback Digital Circuits

In contrast to combinational logic and master clocked sequential logical, asynchronous feedback circuits are partially defined due to analogous meta-stabilities. We present a novel formalism to exactly explore this digitally assisted analog phenomenon in order to build up a representative test bench that is able to enforce race constraints (meta-stable behavior) for non-deterministics, instabilities as well as for oscillations in feedback structures. Further, we introduce our definitions for consistently modeling under state transition graphs, we provide all entities for modeling asynchronous feedback structures and state our proposed methodology with an exemplary asynchronous circuitry. The given example is explained at a high level of abstraction, all data for revision is provided, too. The approach seems to be capable to test for meta-stabilities, analog behavior in feedback digital structures.     

Secure encrypted-data aggregation for wireless sensor networks

This paper proposes a secure encrypted-data aggregation scheme for wireless sensor networks. Our design for data aggregation eliminates redundant sensor readings without using encryption and maintains data secrecy and privacy during transmission. Conventional aggregation functions operate when readings are received in plaintext. If readings are encrypted, aggregation requires decryption creating extra overhead and key management issues. In contrast to conventional schemes, our proposed scheme provides security and privacy, and duplicate instances of original readings will be aggregated into a single packet. Our scheme is resilient to known-plaintext attacks, chosen-plaintext attacks, ciphertext-only attacks and man-in-the-middle attacks. Our experiments show that our proposed aggregation method significantly reduces communication overhead and can be practically implemented in on-the-shelf sensor platforms.     

Curvelet-based fingerprint anti-spoofing

Existing perspiration-based liveness detection algorithms need two successive images (captured in certain time interval), hence they are slow and not useful for real-time applications. Liveness detection methods using extra hardware increase the cost of the system. To alleviate these problems, we propose new curvelet-based method which needs only one fingerprint to detect liveness. Wavelets are very effective in representing objects with isolated point singularities, but fail to represent line and curve singularities. Curvelet transform allows representing singularities along curves in a more efficient way than the wavelets. Ridges oriented in different directions in a fingerprint image are curved; hence curvelets are very significant to characterize fingerprint texture. Textural measures based on curvelet energy and co-occurrence signatures are used to characterize fingerprint image. Dimensionalities of feature sets are reduced by running Pudil’s sequential forward floating selection (SFFS) algorithm. Curvelet energy and co-occurrence signatures are independently tested on three different classifiers: AdaBoost.M1, support vector machine and alternating decision tree. Finally, all the aforementioned classifiers are fused using the “Majority Voting Rule” to form an ensemble classifier. A fingerprint database consisting of 185 real, 90 Fun-Doh and 150 Gummy fingerprints is created by using varieties of artificial materials for casts and moulds of spoof fingerprints. Performance of the new liveness detection approach is found very promising, as it needs only one fingerprint and no extra hardware to detect vitality.     

Co Solubility in Sn and Interfacial Reactions in Sn-Co/Ni Couples

It has been reported that minute Co additions to Sn-based solders are very effective for reducing undercooling, probably due to low Co solubility in Sn. In this study, Co solubility in molten Sn was determined experimentally. According to results of metallographic analysis, Co solubility in molten Sn is as low as 0.04 wt.% at 250°C. Interfacial reactions in Sn-Co/Ni couples at 250°C were examined for Co contents from 0.01 wt.% to 0.4 wt.%. The Ni₃Sn₄ phase was the only interfacial reaction phase in almost the entire Sn-0.01 wt.%Co/Ni couple. For Sn-Co/Ni couples with a Co content higher than 0.01 wt.%, a thin, continuous Ni₃Sn₄ layer and a discontinuous decahedron (Ni,Co)Sn₄ phase were formed in the initial stage of reaction. The reaction products evolved with time. With longer reaction time, the Sn content in the decahedron (Ni,Co)Sn₄ phase decreased, and the (Ni,Co)Sn₄ phase transformed into the (Ni,Co)Sn₂ phase and cleaved into a sheet, which then detached from the interface, after which Ni₃Sn₄ began to grow significantly with longer reaction times.     

Kinetics of Intermetallic Compound Formation at the Interface Between Sn-3.0Ag-0.5Cu Solder and Cu-Zn Alloy Substrates

The growth kinetics of an intermetallic compound (IMC) layer formed between Sn-3.5Ag-0.5Cu (SAC) solders and Cu-Zn alloy substrates was investigated for samples aged at different temperatures. Scallop-shaped Cu₆Sn₅ formed after soldering by dipping Cu or Cu-10 wt.%Zn wires into the molten solder at 260°C. Isothermal aging was performed at 120°C, 150°C, and 180°C for up to 2000 h. During the aging process, the morphology of Cu₆Sn₅ changed to a planar type in both specimens. Typical bilayer of Cu₆Sn₅ and Cu₃Sn and numerous microvoids were formed at the SAC/Cu interfaces after aging, while Cu₃Sn and microvoids were not observed at the SAC/Cu-Zn interfaces. IMC growth on the Cu substrate was controlled by volume diffusion in all conditions. In contrast, IMC growth on Cu-Zn specimens was controlled by interfacial reaction for a short aging time and volume diffusion kinetics for a long aging time. The growth rate of IMCs on Cu-Zn substrates was much slower due to the larger activation energy and the lower layer growth coefficient for the growth of Cu-Sn IMCs. This effect was more prominent at higher aging temperatures.