Effects of Long-Term Temozolomide Treatment on Glioblastoma and Astrocytoma WHO Grade 4 Stem-like Cells

Glioblastoma leads to a fatal course within two years in more than two thirds of patients. An essential cornerstone of therapy is chemotherapy with temozolomide (TMZ). The effect of TMZ is counteracted by the cellular repair enzyme O⁶-methylguanine-DNA methyltransferase (MGMT). The MGMT promoter methylation, the main regulator of MGMT expression, can change from primary tumor to recurrence, and TMZ may play a significant role in this process. To identify the potential mechanisms involved, three primary stem-like cell lines (one astrocytoma with the mutation of the isocitrate dehydrogenase (IDH), CNS WHO grade 4 (HGA)), and two glioblastoma (IDH-wildtype, CNS WHO grade 4) were treated with TMZ. The MGMT promoter methylation, migration, proliferation, and TMZ-response of the tumor cells were examined at different time points. The strong effects of TMZ treatment on the MGMT methylated cells were observed. Furthermore, TMZ led to a loss of the MGMT promoter hypermethylation and induced migratory rather than proliferative behavior. Cells with the unmethylated MGMT promoter showed more aggressive behavior after treatment, while HGA cells reacted heterogenously. Our study provides further evidence to consider the potential adverse effects of TMZ chemotherapy and a rationale for investigating potential relationships between TMZ treatment and change in the MGMT promoter methylation during relapse.     

Materials Surgery – Reactivity Differences of Organic Groups in Hybrids

Synergistic properties in hybrid materials can emerge if the inorganic matrix has an electronic influence on the organic constituents and vice versa. This paper describes the drastic effect of SiO₂ in periodically ordered mesoporous organosilica materials (PMOs) on ethylene groups. A sophisticated, in situ solid‐state NMR spectroscopy study showed that the ozonolysis of ethylene groups follows an entirely different mechanism than is normal for organic, molecular groups. Ultimately, this leads to the topotactic transformation of the PMO material. Only if silicon is not in the alpha position to the double bond does it became possible to establish a new method to functionalize PMOs materials: the targeted scission of the ethylene group and the creation of functionalized pockets inside the pore walls of the mesoporous solid.     

Intensity dependent but temperature independent charge carrier generation in organic photodiodes and solar cells

Measurements of the transient photoresponse of organic photodiodes and solar cells show a strong saturation effect in the quantum efficiency at laser fluences above approximately 3.3 μJ/cm². By a comparison of the measured intensity, temperature and field dependence of the transient pulse responses with extended drift–diffusion simulations, the loss of charge carriers can be traced back to a quadratic loss channel in the charge carrier generation process. In contrast to the predictions of the commonly used Onsager–Braun charge carrier generation model, we demonstrate that the dissociation of bound electron–hole-pairs is temperature independent but slightly field dependent.     

Ortho‐ vs Bay‐Functionalization: A Comparative Study on Tetracyano‐Terrylenediimides

In this paper n‐type semiconductors synthesized via selective fourfold cyanation of the ortho‐ and bay‐positions (2,5,10,13‐ and 1,6,9,14‐positions respectively) of teyrrylenediimides are reported. A detailed study about the impact of the diverse functionalization topologies on the optoelectronic properties, self‐organization from solution, solid‐state packing, and charge carrier transport in field‐effect transistors is presented. The ortho‐substitution preserves the planarity of the core and favors high order in solution processed films. However, the strong intermolecular interactions lead to a microstructure with large aggregates and pronounced grain boundaries which lower the charge carrier transport in transistors. In contrast, the well‐soluble bay‐functionalized terrylenediimide forms only disordered films which surprisingly result in n‐type average mobilities of 0.17 cm²/Vs after drop‐casting with similar values in air. Processing by solvent vapor diffusion enhances the transport to 0.65 cm²/Vs by slight improvement of the order and surface arrangement of the molecules. This mobility is comparable to highest n‐type conductivities measured for solution processed PDI derivatives demonstrating the high potential of TDI‐based semiconductors.     

Structural integrity analysis of axially cracked pipelines using conventional and constraint-modified failure assessment diagrams

This study explores applications of the failure assessment diagram (FAD) methodology to predict the failure behaviour for high pressure pipelines with planar defects having different geometries (i.e., crack depth and crack length). One purpose of this investigation is to assess the capability of FAD procedures in integrity analyses of high pressure pipelines with varying crack configurations. Another purpose is to address the effectiveness of constraint-based FADs to predict burst pressure of low-constraint cracked pipelines. Full scale burst testing of end-capped pipe specimens with axial surface flaws provide the data needed to compare the failure predictions derived from the FAD procedures. The analyses reveal that the degree of agreement between predicted pressures and experimentally measured values depends rather markedly on the crack size for the tested pipes. Moreover, the analyses also show a possible weak dependence of the predicted pressures on the constraint-based correction scheme. Overall, the results validate the use of FAD-based methodologies for defect assessments of axially cracked pipelines.     

Structural Aspects of P2-Type Na0.67Mn0.6Ni0.2Li0.2O2 (MNL) Stabilization by Lithium Defects as a Cathode Material for Sodium-Ion Batteries

A known strategy for improving the properties of layered oxide electrodes in sodium-ion batteries is the partial substitution of transition metals by Li. Herein, the role of Li as a defect and its impact on sodium storage in P2-Na_0.67Mn_0.6Ni_0.2Li_0.2O₂ is discussed. In tandem with electrochemical studies, the electronic and atomic structure are studied using solid-state NMR, operando XRD, and density functional theory (DFT). For the as-synthesized material, Li is located in comparable amounts within the sodium and the transition metal oxide (TMO) layers. Desodiation leads to a redistribution of Li ions within the crystal lattice. During charging, Li ions from the Na layer first migrate to the TMO layer before reversing their course at low Na contents. There is little change in the lattice parameters during charging/discharging, indicating stabilization of the P2 structure. This leads to a solid-solution type storage mechanism (sloping voltage profile) and hence excellent cycle life with a capacity of 110 mAh g^-1 after 100 cycles. In contrast, the Li-free compositions Na_0.67Mn_0.6Ni_0.4O₂ and Na_0.67Mn_0.8Ni_0.2O₂ show phase transitions and a stair-case voltage profile. The capacity is found to originate from mainly Ni³⁺/Ni⁴⁺ and O^2-/O^2-δ redox processes by DFT, although a small contribution from Mn⁴⁺/Mn⁵⁺ to the capacity cannot be excluded.     

Measurement of Onset of Structural Relaxation in Melt-Quenched Phase Change Materials

Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt-quenched amorphous phase, has consistently been observed to have a logarithmic dependence in time. Here, it is shown that this observation is valid only in a certain observable timescale. Using threshold-switching voltage as the measured variable, based on temperature-dependent and short timescale electrical characterization, the onset of drift is experimentally measured. This additional feature of the structural relaxation dynamics serves as a new benchmark to appraise the different classical models to explain drift.     

Broadband cylindrical dielectric resonator antenna excited by modified microstrip line

The impedance bandwidth of a high permittivity cylindrical dielectric resonator antenna excited by a microstrip line was significantly improved by modifying the feed geometry. The 10 dB return loss bandwidth is enhanced from 12 to 26% without much affecting the gain and other radiation properties of the antenna. Good agreement has been observed between the predicted and measured results.     

On-Line Error Detection for Bit-Serial Multipliers in GF(2m)

In this paper error detection is applied to four finite field bit-serial multipliers. It is shown that by using parity prediction, on-line error detection can be incorporated into these multipliers with very low hardware overheads. These hardware overheads are generally independent of m and comprise only a handful of gates, so for large values of m these overheads are particularly low. The fault coverage of the presented structures has been investigated by simulation experiment and shown to range between 90% and 94.3%.