A Surface Tailoring Method of Ultrathin Polymer Gate Dielectrics for Organic Transistors: Improved Device Performance and the Thermal Stability Thereof

Tailoring the surface of the dielectric layer is of critical importance to form a good interface with the following channel layer for organic thin film transistors (OTFTs). Here, a simple surface treatment method is applied onto an ultrathin (<15 nm) organosilicon‐based dielectric layer via the initiated chemical vapor deposition (iCVD) to make it compatible with organic semiconductors without degrading its insulating property. A molecular‐thin oxide capping layer is formed on a 15 nm thick poly(1,3,5‐trimetyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) by a brief oxygen plasma treatment. The capping layer greatly enhances the thermal stability of the dielectrics, without degrading the original mechanical flexibility and insulating performance of the dielectrics. Moreover, the surface silanol functionalities formed by the plasma treatment can also be utilized for the surface modification with silane compounds. The surface‐modified dielectrics are applied to fabricate low‐voltage operating (<5 V) pentacene‐based OTFTs. The highest field‐effect mobility of the device with the surface‐treated 15 nm thick pV3D3 is 0.59 cm² V^?1 s^?1, which is improved up to two times compared to the TFT with the pristine pV3D3. It is believed that the simple surface treatment method can widely extend the applicability of the highly robust, ultrathin, and flexible pV3D3 gate dielectrics to design the surface of the dielectrics to match well various kinds of organic semiconductors.     

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs

Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO₂ thicknesses. The distribution of generated traps after HCI and PBTI stress was also investigated. The drain-current power spectral density made up all of the traps of IL in 0 < z < T_IL and the traps of HfO₂ in T_IL < z < T_HK. The traps near the Si/SiO₂ interface dominated the 1/f noise at higher frequencies, which is common in SiO₂ dielectrics. For the HfO₂/SiO₂ gate stack, however, the magnitude of the 1/f noise did not significantly change after HCI and PBTI because of more traps in the bulk HfO₂ film than at the bottom of the interface.     

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

Spectroscopic ellipsometry and photoreflectance measurements on CdTe/GaAs strained heterostructures grown by moleculclr beam epitaxy were carried out to investigate the effect of the strain and the dependence of the lattice parameter on the CdTe epitaxial layer thicknesses. Compressive strains exist in CdTe layers thinner than 2 μm. As the strain increases, the value of the critical-point energy shift increases linearly. These results indicate that the strains in the CdTe layers grown on GaAs substrates are strongly dependent on the CdTe layer thickness. Author to whom all correspondence should be addressed.     

Structure‐Properties Relationship in Iron Oxide‐Reduced Graphene Oxide Nanostructures for Li‐Ion Batteries

Non‐aqueous sol‐gel routes involving the reaction of metal oxide precursors in organic solvents (e.g., benzyl alcohol) at moderate temperature and pressure, offer advantages such as high purity, high reproducibility and the ability to control the crystal growth without the need of using additional ligands. In this paper, a study carried out on a series of iron oxide/reduced graphene oxide composites is presented to elucidate a structure‐properties relationship leading to an improved electrochemical performance of such composites. Moreover, it is demonstrated that the easy production of the composites in a variety of temperature and composition ranges, allows a fine control over the final particles size, density and distribution. The materials obtained are remarkable in terms of the particle's size homogeneity and dispersion onto the reduced graphene oxide surface. Moreover, the synthesis method used to obtain the graphene oxide clearly affects the performances of the final composites through the control of the restacking of the reduced graphene oxide sheets. It is shown that a homogeneous and less defective reduced graphene oxide enables good electrochemical performances even at high current densities (over 500 mAh/g delivered at current densities as high as 1600 mA/g). The electrochemical properties of improved samples reach the best compromise between specific capacity, rate capability and cycle stability reported so far.     

High-performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology

We reported 94-GHz, low conversion loss, and high isolation single balanced active gate mixer based on 70-nm gate length InGaAs/InAlAs metamorphic high-electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5/spl sim/3.5 dB and under -29 dB in the range of 92.95/spl sim/94.5 GHz, respectively. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, an extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency (f/sub t/) of 330 GHz, and a maximum oscillation frequency (f/sub max/) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.     

Formal Proofs for the Security of Signcryption

Signcryption is an asymmetric cryptographic method that provides simultaneously both message confidentiality and unforgeability at a low computational and communication overhead. In this paper we propose realistic security models for signcryption, which give the attacker power to choose both messages/signcryptexts as well as recipient/sender public keys when accessing the signcryption/unsigncryption oracles of attacked entities. We then show that Zheng's original signcryption scheme is secure in our confidentiality model relative to the Gap Diffie-Hellman problem and is secure in our unforgeability model relative to a Gap version of the discrete logarithm problem. All these results are shown in the random oracle model.     

Antibacterial mode of action of seed essential oil of Eleutherococcus senticosus against foodborne pathogens

This study investigated the antibacterial mechanism of action of the seed essential oil of Eleutherococcus senticosus (ESEO) against foodborne pathogenic bacteria. Preliminarily, the ESEO (1000 μg disc^?1) showed potential antibacterial effect as diameter of inhibition zones (12.0 ± 0.2–37.0 ± 2.0 mm) against the tested foodborne pathogens. The MIC and MBC values of ESEO against the tested bacteria were found in the range of 125–500 and 500–1000 μg mL^?1, respectively. At MIC concentration, the ESEO had potential inhibitory effect on the cell viability of the tested pathogens. In addition, SEM analysis showed the inhibitory effect of ESEO as confirmed by considerable morphological alterations on the cell wall of B. cereus ATCC 13061 and E. coli O157:H7 ATCC 43889. Moreover, the ESEO revealed its mode of action against foodborne pathogens on membrane integrity as confirmed by release of extracellular ATP, 260‐nm absorbing materials and leakage of potassium ions. These findings confirm that the ESEO can be used as a potential antibacterial agent in food industry to inhibit the growth of various foodborne pathogens.     

Antioxidant and anti‐hypertensive activity of anthocyanin‐rich extracts from hulless pigmented barley cultivars

Anthocyanin‐rich acetone extracts of barley grain of four hulless pigmented genotypes were investigated to determine their potential as functional food ingredients. The purple barley cultivar contained 11 anthocyanins, whereas only one anthocyanin, peonidin derivative, was observed in blue, black and yellow barley. The total anthocyanin content of pigmented barley genotypes ranged from 3.2 to 678.5 mg kg^?1 in whole grain and from 4.5 to 1654.6 mg kg^?1 in bran. The purple barley bran extract gave the highest DPPH radical scavenging capacity, superoxide radical scavenging capacity and total antioxidant activity. The half maximal inhibitory concentration (IC₅₀) of angiotensin I‐converting enzyme (ACE) of anthocyanin‐rich extract of purple barley grain and bran was 8.77 and 4.54 mg mL^?1, respectively. Purple barley appears to have great potential uses for the promotion of human health and development of nutraceuticals and functional foods.     

Slowly digestible sweetpotato flour: Preparation by heat-moisture treatment and characterization of physicochemical properties

The preparation and physicochemical characteristics of sweetpotato flour with increased slowly digestible starch (SDS) fraction were investigated under various heat-moisture treatment (HMT) conditions. The optimum conditions for preparing slowly digestible sweetpotato flour established using response surface methodology were moisture content of 22%, temperature of 103°C, and treatment time of 5.8 h. The highest SDS content in heat-moisture treated sweetpotato flour was 57.6%. The relative crystallinity of heat-moisture treated sweetpotato flour decreased, but the X-ray diffraction pattern maintained the A-type. The DSC of the heatmoisture treated flour showed a decreased gelatinization temperature range and gelatinization enthalpy compared with native one. The viscosity profiles and values changed significantly with HMT, resulting in a higher pasting temperature, decrease of the viscosity values, and no breakdown. It indicates that heat-moisture treated sweetpotato flour is more stable at high temperatures and shear rates than native one.