Monitoring the Channel Formation in Organic Field‐Effect Transistors via Photoinduced Charge Transfer

Conducting channel formation in organic field‐effect transistors (OFETs) is considered to happen in the organic semiconductor layer very close to the interface with the gate dielectric. In the gradual channel approximation, the local density of accumulated charge carriers varies as a result of applied gate bias, with the majority of the charge carriers being localized in the first few semiconductor monolayers close to the dielectric interface. In this report, a new concept is employed which enables the accumulation of charge carriers in the channel by photoinduced charge transfer. An OFET employing C₆₀ as a semiconductor and divinyltetramethyldisiloxane‐bis(benzocyclobutene) as the gate dielectric is modified by a very thin noncontinuous layer of zinc‐phthalocyanine (ZnPc) at the semiconductor/dielectric interface. With this device geometry, it is possible to excite the phthalocyanine selectively and photogenerate charges directly at the semiconductor/dielectric interface via photoinduced electron transfer from ZnPc onto C₆₀. Thus the formation of a gate induced and a photoinduced channel in the same device can be correlated.     

Concentrations of native and gold defects in HgCdTe from first principles calculations

We have studied the defect formation energies of the various native (vacancies, interstitials, and antisites) and Au defects in Hg_1−xCd_xTe using density functional-based total energy calculations with ultrasoft pseudo-potentials. These studies are important for infrared (IR) detection technology where the device performance can be severely degraded because of defects. To calculate formation energies, we modeled the neutral and charged defects using supercells containing 64 atoms. From the formation energies, we have determined the defect concentrations as a function of stoichiometry and temperature. We find the prevalent neutral defects to be Au at the Hg site (Au_Hg ), Hg vacancies (V_Hg ), and Te antisites (Te_Hg ). We have also explicitly studied charged defects and have found Te _Hg ²⁺ , Au _Hg ¹⁻ , V _Hg ¹⁻ , V _Hg ²⁻ , and V _Te ²⁺ to have low formation energies. We have identified Au_Hg to be the prevalent Au defect, having concentrations several orders of magnitude greater than the other Au defects. We find that the charge state of V_Hg is primarily (1−) or (2−) depending on the electronic chemical potential.     

Maximum Lifetime Routing Problem in Duty-Cycling Sensor Networks

In order to extend the lifetime of a wireless sensor network, the energy consumption of individual sensor nodes need to be minimized. This can be achieved by minimizing the idle listening time with duty cycling mechanism and/or minimizing the number of communications per node. The nodes will have different relay loads for different routing strategies: therefore, the routing problem is important factor in minimization of the number of communications per node. In this paper, we investigate achievable network lifetime with a routing mechanism on top of an existing duty-cycling scheme. To this end, we formulated the routing problem for duty-cycling sensor network as a linear programming problem with the objective of maximizing the network lifetime. Using the developed linear programming formulation, we investigate the relationship between network lifetime and duty-cycling parameter for different data generation rates and determine the minimum duty-cycling parameter that meets the application requirements. To the best of our knowledge, this is the first mathematical programming formulation which addresses the maximum lifetime routing problem in duty-cycling sensor network. In order to illustrate the application of the analytical model, we solved the problem for different parameter settings.     

Hydrogen‐Bonded Organic Semiconductors as Stable Photoelectrocatalysts for Efficient Hydrogen Peroxide Photosynthesis

Research on semiconductor photocatalysts for the conversion of solar energy into chemical fuels has been at the forefront of renewable energy technologies. Water splitting to produce H₂ and CO₂ reduction to hydrocarbons are the two prominent approaches. A lesser‐known process, the conversion of solar energy into the versatile high‐energy product H₂O₂ via reduction of O₂ has been proposed as an alternative concept. Semiconductor photoelectrodes for the direct photosynthesis of H₂O₂ from O₂ have not been applied up to now. Photoelectrocatalytic oxygen reduction to peroxides in aqueous electrolytes by hydrogen‐bonded organic semiconductor is observed photoelectrodes. These materials have been found to be remarkably stable operating in a photoelectrochemical cell converting light into H₂O₂ under constant illumination for at least several days, functioning in a pH range from 1 to 12. This is the first report of a semiconductor photoelectrode for H₂O₂ production, with catalytic performance exceeding prior reports on photocatalysts by one to two orders of magnitude in terms of peroxide yield/catalyst amount/time. The combination of a strongly reducing conduction band energy level with stability in aqueous electrolytes opens new avenues for this widely available materials class in the field of photo(electro) catalysis.     

Small-molecule vacuum processed melamine-C60, organic field-effect transistors

The transfer of benchtop knowledge into large scale industrial production processes represents a challenge in the field of organic electronics. Large scale industrial production of organic electronics is envisioned as roll to roll (R2R) processing which nowadays comprises usually solution-based large area printing steps. The search for a fast and reliable fabrication process able to accommodate the deposition of both insulator and semiconductor layers in a single step is still under way. Here we report on the fabrication of organic field effect transistors comprising only evaporable small molecules. Moreover, both the gate dielectric (melamine) and the semiconductor (C₆₀) are deposited in successive steps without breaking the vacuum in the evaporation chamber. The material characteristics of evaporated melamine thin films as well as their dielectric properties are investigated, suggesting the applicability of vacuum processed melamine for gate dielectric layer in OFETs. The transistor fabrication and its transfer and output characteristics are presented along with observations that lead to the fabrication of stable and virtually hysteresis-free transistors. The extremely low price of precursor materials and the ease of fabrication recommend the evaporation processes as alternative methods for a large scale, R2R production of organic field effect transistors.     

High output impedance current-mode lowpass,bandpass and highpass filters using current controlled conveyors

Three new current-mode second-order filter configurations which employ one or two current controlled conveyors (CCCIIs) and three passive elements are presented. Each proposed filter can realize one of the bandpass, lowpass or highpass responses all at high impedance outputs. The proposed filters offer current-control of pole angular frequency ω_o without disturbing the parameter ω_o /Q. No component matching is required and all the passive and active sensitivities are low. PSPICE simulation results are given to confirm the theoretical analysis.