InAs/GaSb二类超晶格红外探测材料的ICP刻蚀

分别采用 Cl2/Ar和SiCl4/Ar作为刻蚀气体对InAs/GaSb二类超晶格红外探测材料进行ICP（Inductively Couple Plasma）刻蚀。结果表明,两种刻蚀气体的刻蚀深度与刻蚀时间都呈线性关系;在2 mTorr气压下,RF功率为50 W,SiCl4流量为3 sccm,Ar为9 sccm时,刻蚀速率为100 nm/min,且与材料的掺杂浓度无关。实验还表明,SiCl4/Ar作为刻蚀气体时,Ar流量在很大范围内对刻蚀速率没用明显影响,但Ar的流量越大,刻蚀的均匀性越好;用Cl2/Ar作为刻蚀气体时,刻蚀速率也是100 nm/min,但Ar流量对刻蚀速率有影响:当Ar流量小于3 sccm时,刻蚀速率随Ar流量的减小而明显降低。     

Solution-Mediated Hybrid FAPbI3 Perovskite Quantum Dots for Over 15% Efficient Solar Cell

Organic–inorganic formamidinium lead triiodide (FAPbI₃) hybrid perovskite quantum dot (QD) is of great interest to photovoltaic (PV) community due to its narrow band gap, higher ambient stability, and long carrier lifetime. However, the surface ligand management of FAPbI₃ QD is still a key hurdle that impedes the design of high-efficiency solar cells. Herein, this study first develops a solution-mediated ligand exchange (SMLE) for preparing FAPbI₃ QD film with enhanced electronic coupling. By dissolving optimal methylammonium iodide (MAI) into antisolvent to treat the FAPbI₃ QD solution, the SMLE can not only effectively replace the long-chain ligands, but also passivate the A- and X-site vacancies. By combining experimental and theoretical results, this study demonstrates that the SMLE engineered FAPbI₃ QD exhibits lower defect density, which is beneficial for fabricating high-quality QD arrays with desired morphology and carrier transport. Consequently, the SMLE FAPbI₃ QD based solar cell outputs a champion efficiency of 15.10% together with improved long-term ambient storage stability, which is currently the highest reported value for hybrid perovskite QD solar cells. These results would provide new design principle of hybrid perovskite QDs toward high-performance optoelectronic application.     

十字架型超材料吸波特性及机理研究

设计了一种十字架型电磁超材料吸波体,采用CST studio suite 2009 频域求解器提取S 参数进行仿真研究,并计算了其吸波率,在24.65 THz 和35.25 THz 得到两个吸收峰,吸收率分别为0.83 和0.997。改变材料结构尺寸,在7.3 THz 达到完美吸收,吸收率接近于1。将THz 波段的超材料吸波体结构尺寸放大1000 倍,在GHz 波段同样可以达到完美吸收,说明超材料吸波体可通过对结构尺寸调节改变吸收波段。另外研究了这种吸波体的吸收机理,发现吸收主要在第一层的十字架金属单元层,可用于Bolometer 探测器的设计。     

深度特征联合表征的红外图像目标识别方法

针对红外图像目标识别问题,提出了联合卷积神经网络和联合稀疏表示的方法。卷积神经网络学习红外目标图像的深度特征,描述目标的多层次特性。不同深度特征可实现对目标不同特性的描述,因此具有良好的互补性。综合运用多层次深度特征,可为目标识别提供更为充分的信息。分类过程中,采用联合稀疏表示对待识别样本的多层次深度特征矢量进行表征,通过不同特征矢量之间的相关性约束提升整体表示精度。因此,联合稀疏表示在利用各层次深度特征的同时,充分考察了它们之间的内在关联。根据联合稀疏表示的输出结果,按照误差最小的原则判定输入样本的目标类别。实验基于中波红外（ MWIR）目标图像数据集开展,分别在原始测试样本、噪声测试样本以及少量训练样本3类条件下对提出方法进行了测试,并与4类现有红外目标识别方法进行了对比分析。实验结果表明,提出方法在设置的3类测试条件下均可以取得优势性能,表明其对于红外图像目标识别问题具有应用潜力。     

基于双流-非局部时空残差卷积神经网络的人体行为识别

3维卷积神经网络(3D CNN)与双流卷积神经网络(two-stream CNN)是视频中人体行为识别研究的常用架构,且各有优势。该文旨在研究结合两种架构且复杂度低、识别精度高的人体行为识别模型。具体地,该文提出基于通道剪枝的双流-非局部时空残差卷积神经网络(TPNLST-ResCNN),该网络采用双流架构,分别在时间流子网络和空间流子网络采用时空残差卷积神经网络(ST-ResCNN),并采用均值融合算法融合两个子网络的识别结果。进一步地,为了降低网络的复杂度,该文提出了针对时空残差卷积神经网络的通道剪枝方案,在实现模型压缩的同时,可基本保持模型的识别精度;为了使得压缩后网络能更好地学习到输入视频中人体行为变化的长距离时空依赖关系,提高网络的识别精度,该文提出在剪枝后网络的首个残差型时空卷积块前引入一个非局部模块。实验结果表明,该文提出的人体行为识别模型在公共数据集UCF101和HMDB51上的识别准确率分别为98.33%和74.63%。与现有方法相比,该文模型具有参数量小、识别精度高的优点。     

太赫兹宽带Denisov型准光模式变换器的设计分析

研究并设计了一种具有宽频带工作能力的太赫兹准光模式变换器。该准光模式变换器采用具有高效率特性的Denisov 辐射器,工作在TE_6,2模式,用于实现回旋管内的模式变换。由于Denisov 辐射器的参数是影响准光模式变换器宽带性能的主要因素,因此通过对辐射器参数的优化设计,达到增大模式变换器带宽的效果。使用自主开发的准光学模拟程序进行仿真,模式变换器中心频率为94 GHz,带宽达2 GHz。     

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.     

IP网络建设中的传输承载模式研究

从传输网络与所承载的IP网络间的关联角度出发,分析了IP网络和光传输网络间的联接模式和典型处理方式,提出了光传输网络接口和通道配置的要求和方法。     

Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications

Rhenium disulfide (ReS₂) is a two‐dimensional (2D) group VII transition metal dichalcogenide (TMD). It is attributed with structural and vibrational anisotropy, layer‐independent electrical and optical properties, and metal‐free magnetism properties. These properties are unusual compared with more widely used group VI‐TMDs, e.g., MoS₂, MoSe₂, WS₂ and WSe₂. Consequently, it has attracted significant interest in recent years and is now being used for a variety of applications including solid state electronics, catalysis, and, energy harvesting and energy storage. It is anticipated that ReS₂ has the potential to be equally used in parallel with isotropic TMDs from group VI for all known applications and beyond. Therefore, a review on ReS₂ is very timely. In this first review on ReS₂, we critically analyze the available synthesis procedures and their pros/cons, atomic structure and lattice symmetry, crystal structure, and growth mechanisms with an insight into the orientation and architecture of domain and grain boundaries, decoupling of structural and vibrational properties, anisotropic electrical, optical, and magnetic properties impacted by crystal imperfections, doping and adatoms adsorptions, and contemporary applications in different areas.