Possibilities and extension of XRD material response analysis in failure research for the advanced evaluation of the damage level of Hertzian loaded components

Due to clearly distinguishable damage symptoms, it is differentiated between the surface and sub‐surface failure mode of rolling bearings. Material states red out by X‐ray diffraction (XRD) residual stress measurements point to a variety of loading conditions especially at raceway surfaces that are associated with several competing failure mechanisms. The corresponding lifetime reduction can range from the lower fatigue strength region to material ratcheting in extreme cases. Relevant position of the microstructural changes and nature of the failure mechanisms are characterized. The time alteration of the XRD material parameters measured at or near the surface and at the depth of the maximum equivalent stress correlates, in a different manner, with the statistical parameter of the 10 % bearing life. Both failure modes are illustrated by concrete examples. Contaminated lubricant and boundary lubrication, which represent practically important surface‐induced failures, are discussed in more detail. Gray staining, i.e. shallow pitting, often occurs without distinct indication of global material aging by means of XRD characteristics. Here, scanning electron microscopy observations and electron microprobe analyses point to corrosion fatigue as acting surface failure mechanism. The interaction between material and lubricant under complex loading regimes particularly of mixed friction and corrosion opens further failure research areas in the field of tribology.     

Non-steady-state model for kinetics of free radical polymerization, 4. Direct thermal initiation

This paper deals with the non-steady-state kinetics of direct thermal initiated polymerization. The initiation is assumed to be a bimolecular reaction of the monomer. The relationship between the radical concentration and the monomer conversion is rigorously derived. In further treatment a few very close approximations are introduced based on the fact that the number of monomer molecules reacting in the initiation step is much less than that consumed in the propagation step for a process producing high polymer, and the value of the rate constant for propagation or chain transfer is much lower than that for chain termination. Expressions for various molecular parameters, such as molecular weight distribution, number-average and weight-average degrees of polymerization, and dispersity, are given. Several numerical examples are provided.     

2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

A fully distributed power control algorithm for cellular mobilesystems

Several distributed power control algorithms that can achieve carrier-to-interference ratio (CIR) balancing with probability one have been proposed previously for cellular mobile systems. In these algorithms, only local information is used to adjust transmitting power. However, a normalization procedure is required in each iteration to determine transmitting power and, thus, these algorithms are not fully distributed. In this paper, we present a distributed power control algorithm which does not need the normalization procedure. We show that the proposed algorithm can achieve CIR balancing with probability one. Moreover, numerical results reveal our proposed scheme performs better than the algorithm presented in Grandhi et al. [1994]. The excellent performance and the fully distributed property make our proposed algorithm a good choice for cellular mobile systems     

Substrate-connected high voltage pumping circuits for low supplyvoltages

Novel high voltage pumping circuits for low supply voltages are proposed. Utilising a small pumping circuit and the new substrate-connected techniques can enhance charge transfer efficiency and eliminate the body effect at low supply voltages. Furthermore, a diode-connected transistor technique can improve the reverse charge sharing phenomenon when the output has a load current. With this technique high boosted voltages can be obtained at low supply voltages