Refractory objects and materials for continuous steel casting

In the OAO Borovich Refractory Combine production has been assimilated for a complete set of refractories for continuous steel casting, i.e. from a pipe for protecting a stream of metal to a submerged nozzle. In technical and life characteristics the products correspond to that of world analogs, they provide accident free steel pouring, make it possible to reduce the specific consumption of refractories per ton of steel, to increase CBCM productivity, to reduce billet scrap, and to reduce steel cost. Translated from Novye Ogneupory, No. 8, pp. 4–9, August 2008.     

Formation of the complex oxide NaNdTiO<Subscript>4</Subscript>

The processes of phase formation in the Na₂CO₃-TiO₂ and Na₂CO₃-TiO₂-Nd₂O₃ systems are investigated in the temperature range 600–900°C. The high-temperature solid-phase reactions underlying the process of formation of complex oxide NaNdTiO4 are studied. It is established that the synthesis of the NaNdTiO₄ compound occurs through the reaction of the intermediate product Na₈Ti₅O₁₄ with neodymium oxide in the temperature range 720–780°C. The optimum method is proposed for synthesizing NaNdTiO₄, which makes it possible to reduce the temperature of the synthesis, to avoid the formation of impurities, and to obtain the product in a finely dispersed state.     

Aggregate stability of ZrO2 aqueous sols in electrolyte solutions

The aggregate stability of submicron and nanosized ZrO₂ aqueous sols of different origins and different dispersities at pH 3–10 in the KCl concentration range 10^?3–10^?1 M is investigated by flow ultramicroscopy and photometry. The results obtained are analyzed in the framework of the extended Derjaguin-Landau-Verwey-Overbeek theory and the Muller-Martynov theory of reversible aggregation. The extension of boundary layers of water near the surface of the ZrO₂ particles is estimated.     

Tellurium clusters in channels of the porous silica ZSM-11

The distribution and structure of tellurium nanoclusters synthesized in crystal channels of the porous silica ZSM-11 are investigated using the maximum-entropy method and the Rietveld analysis. It is shown that the intercalated tellurium atoms are arranged in channels of the ZSM-11 zeolite not randomly but in the form of scraps of infinite chains similar to those observed in massive tellurium. The distances between the nearest neighbor tellurium atoms vary in the range 2.53(4)–2.70(3) ?. The clusters Te₄ are formed at the intersections of channels in the structure. These clusters have the form of distorted tetrahedra in which the tellurium atoms are separated by distances of 2.53(4) and 2.90(4) ?. Original Russian Text ? A.E. Lapshin, Yu.F. Shepelev, Yu.I. Smolin, E.A. Vasil’eva, 2008, published in Fizika i Khimiya Stekla.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Comparative Study of Rubidium and Cesium as Promoters in Carbon-supported Ruthenium Catalysts for Ammonia Synthesis

Sibunit-supported Ru-catalysts promoted with cesium or rubidium compounds have been comparatively studied with XPS. The cesium promoter interacts both with support and with active component. The absence of the promoter–support interaction in the case of rubidium provides a stronger interaction between promoter and active component compared to the cesium-based catalysts. These differences in the promoter–support and promoter–metal interactions are exhibited when a sequence of ruthenium and alkali introduction are changed.     

Some sulfides of gold and silver: Composition,mineral mineral assemblage,and conditions of formation

Characteristic mineral assemblage and special features of the composition of Au and Ag sulfides of gold-silver deposits have been established. The forms of the occurrence of Au and Ag in the minerals of the early and last stages have been analyzed. The conditions for the formation of uytenbogaardtite and petrovskaite in supergene and low-temperature hydrothermal processes have been considered. A thermodynamic model explaining their genesis in the oxidation zones is presented.     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.     

On the SEP of Cooperative Diversity with Opportunistic Relaying

We analyze the exact symbol error probability (SEP) of cooperative diversity with opportunistic amplify-and-forward (AF) relaying. The benefit of this opportunism to the SEP is assessed by comparing with maximal ratio combining of orthogonal multiple AF relay transmissions.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).