Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

1.04 GBd low EMI digital video interface system using small swingserial link technique

In a high-resolution flat panel system, a conventional interface that directly connects a liquid crystal display (LCD) controller to a flat panel cannot overcome the problems of excess EMI (electromagnetic interference) and power caused by full-swing transmission signals in parallel lines. This paper presents a high-speed digital video interface system implemented with a low-cost standard CMOS (complimentary metal-oxide-semiconductor) technology that can mitigate EMI and power problems in high-resolution flat panel display systems. The combined architecture of the high-speed, small number of parallel lines and low-voltage swing serial interface can support resolutions from VGA (640×480 pixels) up to XGA (1024×768 pixels) with significant power improvement and drastic EMI reduction. To support high-speed, low-voltage swing signaling and overcome channel-to-channel skew problems, a robust data recovery system is required. The proposed digital phase-locked loop enables robust skew-insensitive data recovery of up to 1.04 GBd     

A 200-MHz complex number multiplier using redundant binaryarithmetic

Modern digital communication systems rely heavily on baseband signal processing for in-phase and quadrature (I-Q) channels, and complex number processing in low-voltage CMOS has become a necessity for channel equalization, timing recovery, modulation, and demodulation. In this work, redundant binary (RB) arithmetic is applied to complex number multiplication for the first time so that an N-bit parallel complex number multiplier can be reduced to two RE multiplications (i.e., an addition of N RB partial products) corresponding to real and imaginary parts, respectively. This efficient RE encoding scheme proposed can generate RB partial products with no additional hardware and delay overheads. A prototype 8-bit complex number multiplier containing 11.5 K transistors is integrated on 1.05×1.33 mm² using 0.8 μm CMOS. The chip consumes 90 mW with 2.5 V supply when clocked at 200 MHz     

Design of one-dimensional ferromagnet based on polyacetylene chain

As a model for organic ferromagnetism in a one-dimensional system, substituted polyacetylenes are re-considered on the basis of the molecular orbital (MO) and the crystal orbital (CO) methods. The semiempirical MO calculations with configuration interaction for the dimer model show that the exchange interaction on poly[(4-oxyphenyl)acetylene] (1) is negative in spite of Ovchinnikov's prediction, due to the direct interaction between the adjacent pendant spins. On the other hand, it is shown that a polyacetylene chain with phenoxy radicals as pendants on every other active site can become a one-dimensional feromagnet. Moreover, the CO calculations by means of the unrestricted Hartree-Fock method give a theoretical background for the realization of a ground state with macroscopic spin alignment on the improved model chain.     

Rapidly tunable optical add-drop multiplexer utilising relaxed beam splitters

A polarisation-independent four-port electro-optic tunable filter in the 1530 nm wavelength regime utilising non-polarising relaxed beam splitters and strain-induced polarisation converters on LiNbO₃ with 16 nm tuning range and 46 ns tuning speed is reported.     

Fatigue crack propagation properties from small sized rod specimens

Mechanical properties characterization is needed in many industrial applications yet sufficient amount of material for fabricating standard-sized testing specimens is often not available. Techniques for testing miniaturized specimen must be adopted. Much effort has been made to develop techniques for impact, fracture toughness and tensile properties of sub-sized specimens. Work on the testing of fatigue properties is more limited. In this study, fatigue crack propagation behavior is evaluated from the growth of surface crack in a cylindrical rod under tension. Rods of various lengths and diameters were tested. As the size of the rod specimen is reduced, the fatigue crack growth rate tends to increase when correlated using the stress intensity factor range. This increase is explained largely by the decrease in the degree of premature crack closure in the small specimens. Valid fatigue crack growth data can be obtained among the specimens examined except on the crack growth on the surface of the smallest specimen, which has a length of 26 mm and diameter of 8 mm. Even so, valid data can still be elucidated on the latter specimen if the interior growth is considered. The dimensions of the latter specimen allow fatigue properties to be evaluated using broken remnants from impact or other test specimens.     

Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO₂ containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH₂(PMe₃)₄ (Me = CH₃) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.