太赫兹Si/SiGe量子级联激光器波导模拟

波导层结构设计是制备太赫兹(THz)量子级联激光器的关键问题之一.本文基于德鲁得(Drude)模型,利用时域有限差分(FDTD)法,对Si/SiGe量子级联激光器的波导层进行优化设计,从理论上对传统的递变折射率波导、单面金属波导、双面金属波导以及金属/金属硅化物波导横磁模(TM模)的模式损耗和光场限制因子进行了对比分析.结果表明,金属/金属硅化物波导不但可以减小波导损耗,而且有很高的光学限制因子,同时其工艺也比双面金属波导容易实现,为Si/SiGe太赫兹量子级联激光器波导层的设计提供了一定的理论指导.     

模糊强化学习型的图像矢量量化算法

本文给出了一种新的图像矢量量化码书的优化设计方法.传统矢量量化方法只考虑了码字与训练矢量之间的吸引影响,所以约束了最优解的寻解空间.本文提出了一种新的学习机理--模糊强化学习机制,该机制在传统的吸引因子基础上,引入新的排斥因子,极大地释放了吸引因子对最优解的寻解空间的约束.新的模糊强化学习机制没有采用引入随机扰动的方法来避免陷入局部最优码书,而是通过吸引因子和排斥因子的合力作用,较准确地确定了每个码字的最佳移动方向,从而使整体码书向全局最优解靠近.实验结果表明,基于模糊强化学习机制的矢量量化算法始终稳定地取得显著优于模糊K-means算法的性能,较好地解决了矢量量化中的码书设计容易陷入局部极小和初始码书影响优化结果的问题.     

高效率低电磁干扰的升压型DC–DC转换器

A synchronous boost DC-DC converter with an adaptive dead time control （DTC） circuit and antiringing circuit is presented. The DTC circuit is used to provide adjustable dead time and zero inductor current detection for power transistors and therefore, a high efficiency is achieved by minimizing power losses, such as the shoot-through current loss, the body diode conduction loss, the charge-sharing loss and the reverse inductor current loss. Simultaneously, a novel anti-ringing circuit controlled by the switching sequence of power transistors is developed to suppress the ringing when the converter enters the discontinuous conduction mode （DCM） for low electromagnetic interference （EMI） and additional power savings. The proposed converter has been fabricated in a 0.6 #m CDMOS technology. Simulation and experimental results show that the power efficiency of the boost converter is above 81% under different load currents from 10 to 250 mA and a peak efficiency of 90% is achieved at about 100 mA. Moreover, the ringing is easily suppressed by the anti-ringing circuit and therefore the EMI noise is attenuated.     

Solution‐Processed Nickel Oxide Hole Transport Layers in High Efficiency Polymer Photovoltaic Cells

The detailed characterization of solution‐derived nickel (II) oxide (NiO) hole‐transporting layer (HTL) films and their application in high efficiency organic photovoltaic (OPV) cells is reported. The NiO precursor solution is examined in situ to determine the chemical species present. Coordination complexes of monoethanolamine (MEA) with Ni in ethanol thermally decompose to form non‐stoichiometric NiO. Specifically, the [Ni(MEA)₂(OAc)]⁺ ion is found to be the most prevalent species in the precursor solution. The defect‐induced Ni³⁺ ion, which is present in non‐stoichiometric NiO and signifies the p‐type conduction of NiO, as well as the dipolar nickel oxyhydroxide (NiOOH) species are confirmed using X‐ray photoelectron spectroscopy. Bulk heterojunction (BHJ) solar cells with a polymer/fullerene photoactive layer blend composed of poly‐dithienogermole‐thienopyrrolodione (pDTG‐TPD) and [6,6]‐phenyl‐C71‐butyric acid methyl ester (PC₇₁BM) are fabricated using these solution‐processed NiO films. The resulting devices show an average power conversion efficiency (PCE) of 7.8%, which is a 15% improvement over devices utilizing a poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL. The enhancement is due to the optical resonance in the solar cell and the hydrophobicity of NiO, which promotes a more homogeneous donor/acceptor morphology in the active layer at the NiO/BHJ interface. Finally, devices incorporating NiO as a HTL are more stable in air than devices using PEDOT:PSS.     

石油石化行业清洗中的高压水射流技术

本文主要介绍了清水射流清洗、脉冲射流清洗、空化射流清洗、磨料射流清洗、带电气溶性射流清洗，还包括射流与机械刀具联合清洗等高压水射流清洗。并对高压水射流在清洗中的应用给予展望。     

B—DMB快速分组交换机的性能分析

由于不能预先对进入B-DMB交换机的各分组进行调整,可能出现同一时隙有2个或2个以上的分组都要到达某一输出端的情形,因此在B-DMB交换机中不可避免地要加进一些缓冲器。本文对B-DMB交换机的输入、输出缓冲器长度和分组时延进行了分析和计算,得出了一些有用的结论。     

基于变分法的光子超导波基态分析

利用一般的电磁辐射与晶格振动的相互作用模型，研究了强光场与晶格振动的非线性相互作用导致光子对形成这一基本问题，导出了光子．光子有效相互作用。然后利用变分法求得了超导波态系统的基态能量表达式，并讨论了光子对的形成条件。     

单模光纤的传输衰减随温度变化的研究

本文从实验上测量了单模石英光纤在－50～120℃范围内的损耗。随着温度升高，光纤的损耗随之降低，在常温附近达到最小。其后损耗随着温度的继续升高而增加。损耗的变化主要是由于杂质的吸收和微弯损耗。本文对杂质的吸收以及微弯损耗进行了数值模拟，并且从理论上定性地解释了损耗对温度的依赖关系。     

All-active monolithic InP-based HBT VCO with tunable HEMT inductor

A novel HEMT-HBT VCO is presented; it is the first all-active analogue VCO demonstrated using InP HEMT-HBT integrated MMIC technology. The MMIC monolithically integrates an InP common-collector HBT oscillator with a tunable InP HEMT active inductor using selective MBE. The novel HEMT-HBT VCO can provide performance advantages over analogue VCOs such as the multi-vibrator, and has direct implications for high speed clock recovery circuits needed in InP based optoelectronic IC applications     

Random switching techniques for inverter control

New techniques which dramatically reduce acoustic noise by randomising the inverter switching frequency for inverter control are presented. It is shown that the proposed techniques combine the advantages of conventional pulsewidth modulation (PWM) techniques based on regular-sampling techniques and random PWM techniques