Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.     

UC3875在超声电源功率控制系统中的应用

根据超声波发生器的功率控制系统原理 ,阐述了移相控制策略对超声波发生器输出电压波形的影响 ,介绍了移相控制专用芯片UC3875的电路结构和使用设计方法。     

Effect of Fog and Clouds on the Image Quality in Millimeter Communications

The effect of fog and clouds in millimeter communication is discussed, and the attenuation caused by fog and clouds is reviewed. Signal-to-noise ratio (SNR) of image is derived using relating models of fog and clouds attenuation. According to the relation of image quality and its signal-to-noise ratio, the system behavior is forecasted theoretically. It is shown that the signal-to-noise ratio of receiver at certain transmitter power is inverse with radio wave frequency, from about 70dB at 10GHz to 48dB for fog and 49dB for clouds. The image quality of received signal at certain transmitter power is inverse with radio wave frequency, from about 7 grade at 10GHz to 5.27 grade for fog and 5.37 grade for clouds. The above calculated results are consistent with experimental results.     

Windows系统中两种动态交换数据的方法

本文介绍了Ｗｉｎｄｏｗｓ环境下基于消息的ＤＤＥ和基于动态链接库的ＤＤＥＭＬ的区别，并详细叙述了如何使用ＤＤＥＭＬ编制Ｗｉｎｄｏｗｓ应用程序。     

苯磺隆干悬浮剂技术浅析

通过对苯磺隆干悬浮剂项目的研究,进一步了解干悬浮剂的加工工艺和配方中各种助剂的相互作用;剖析助剂对主要技术指标的影响。     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

A new method for producing high melt strength polypropylene with reactive extrusion

A high‐melt‐strength polypropylene (HMSPP) was prepared using a twin‐screw reactive extruder from a commercial isotactic polypropylene through two stages, first, maleic anhydride is grafted to polypropylene to obtain a maleic anhydride‐grafted polypropylene (PP‐g‐MA), and then the grafted polymer is reacted with epoxy to extend the branched chain. Fourier transformed infrared spectroscopy indicated that maleic anhydride was grafted on polypropylene and reacted with epoxy. Melt flow rate and sag resistance test showed that the melt strength of the HMSPP improved considerably. Differential scanning calorimetry test showed that the long chain branches (LCBs) act as a nucleating agent in the crystallization of the HMSPP, which leads to a high crystallization temperature and crystallinity. Furthermore, the LCB efficiency of the HMSPP can also be calculated by analyzing its rheological property. POLYM. ENG. SCI., 2008. © 2008 Society of Plastics Engineers     

A stochastic realization algorithm via block LQ decomposition in Hilbert space

A stochastic realization problem of a stationary stochastic process is re-visited, and a new stochastically balanced realization algorithm is derived in a Hilbert space generated by second-order stationary processes. The present algorithm computes a stochastically balanced realization by means of the singular value decomposition of a weighted block Hankel matrix derived by a “block LQ decomposition”. Extension to a stochastic subspace identification method explains how the proposed abstract algorithm is implemented in system identification.