The process window of a-Si/Ti bilayer metallization for anoxidation-resistant and self-aligned TiSi2 process

The dependences of both oxidation-resistant and self-aligned silicidation properties on the thicknesses of top amorphous-Si (a-Si) and Ti metal in an a-Si/Ti bilayer process are presented. It is shown that a thin silicide layer formed during the reaction between a-Si and Ti films becomes a stable oxidation and nitridation barrier for oxygen- and nitrogen-related impurities. Moreover, the formation sequence of the silicide phase depends not only on the annealing temperature but also on the thickness of the Ti film. In addition, the preferential orientation of the silicide phase after annealing at high temperature also shows a strong dependence on the thickness of Ti film, which is attributed to the difference of the grain size in the polycrystalline silicide film. The allowed process window for the a-Si thickness can be determined experimentally and a reproducible and homogeneous self-aligned TiSi₂ film can be easily obtained by using the a-Si/Ti bilayer process in salicide applications despite high-level contaminations of oxygen impurities in both the as-deposited Ti film and the annealing ambient     

供水水源及管线分布式微机网络系统

本文介绍了一种由ＡＴ３８６为主机，６台ＱＡＴ２８６和最多可增加到２５６台ＭＣＳ－５１单片机系统为从机，采用两种通讯介质（２０ｍＡ电流环和无线电）所组成的分布式微机网络系统。并介绍了该系统的结构设计和软件研制。     

多层气敏薄膜表面吸附及界面扩散的研究

制备了ＳｎＯ３／ＺｎＯ及ＺｎＯ／ＳｎＯ３多层结构的气敏薄膜，用能谱结合氩离子刻蚀的方法及Ｘ射线衍射法，对薄膜的表面吸附。膜间的相互与组成等进行了研究，结果表明：薄膜表面存在少量的吸附多层膜中锌的扩散远比锡一个模型，对吸附现象作了初步的解释，讨论了造成锌锡扩散的原因。     

GaAs FET辐射退化研究

低噪声ＧａＡｓ ＦＥＴ和功率ＧａＡｓ ＦＥＴ经中子辐射都未发生致命性的通或断失效，直流偏置伏态下，其失效模式仅仅表现为源漏饱和电流ＩＤＳＳ的退化降低，据此提出了ＩＤＳＳ退化失效与快中子注量φｎ之间的解析关键式ｌｎｙ＝ａ＋ｂｌｎφ。     

统筹城乡发展全面推进城乡一体化

两年前,义乌市委、市政府认真贯彻党的十六大精神,顺应广大群众的呼声,按照统筹城乡发展的思路,编制了《义乌市城乡一体化行动纲要》,在全市全面部署开展城乡一体化行动,已取得初步成效,赢得了社会各界的赞誉。     

N-Methyl-D-aspartate attenuates opioid receptor-mediated G protein activation and this process involves protein kinase C

The effects of N-methyl-D-aspartate (NMDA) on opioid receptor-mediated G protein activation were explored in neuroblastoma X glioma hybrid (NG108-15) cells. Treatment of the cells with NMDA resulted in a remarkable attenuation of [35S]guanosine-5'-O-(3-thio)triphosphate binding stimulated by [D-Pen2,D-Pen5]-enkephalin (DPDPE), a delta-opioid receptor agonist. The effects of NMDA were dose and time dependent with an IC50 value of 5 nM and could be blocked by NMDA receptor antagonists. After NMDA treatment, the DPDPE dose-response curve shifted to the right (EC50 value increased approximately 7-fold, from 6 to 40 nM), and the maximal response induced by DPDPE was reduced by approximately 60%. The effects of NMDA were reversible, and the DPDPE response could recover within 60 min. The functional responses of delta-, mu-, and kappa-opioid receptors in primarily cultured neurons also were attenuated significantly by NMDA treatment. The inhibitory effects of NMDA on opioid receptor-mediated G protein activation could be blocked by coadministration of the protein kinase C (PKC) inhibitors or by elimination of the extracellular Ca2+. Correspondingly, NMDA treatment of NG108 cells significantly elevated cellular PKC activity and stimulated Gialpha2 phosphorylation. Transient transfection into NG108-15 cells of the wild-type Gialpha2 and a mutated Gialpha2 (Ser144Ala) resulted in a 2-fold increase in DPDPE-stimulated G protein activation. The DPDPE responses were greatly inhibited by NMDA treatment in the wild-type Gialpha2-transfected cells but much less affected in the mutant Gialpha2-transfected cells. In summary, NMDA attenuates opioid receptor/G protein coupling, and this process requires activation of PKC.     

MCS接枝共聚物的结构和形态

将甲基丙烯酸甲酯（ＭＭＡ）、苯乙烯（Ｓ）在氯化聚乙烯（ＣＰＥ）存在下进行悬浮接枝共聚，获得ＭＣＳ树脂。本文着重考察了ＭＣＳ树脂的化学结构及胶粒形态。结果表明，确实发生了接枝共聚。ＣＰＥ用量、ＲＳＨ含量、引发剂浓度、反应温度、溶胀时间及聚合转化率对ＭＣＳ树脂的接枝率、接枝效率均有影响。ＭＣＳ树脂是接枝共聚物、ＭＭＡ／Ｓ共聚物与ＭＭＡ均聚物的混合物，橡胶相ＣＰＥ在ＭＣＳ树脂中的分散情况为“海岛结构”，     

改善准分子激光光强分布的一种方法

介绍了一种改善准分子激光输出光束光强均匀性的新方法，给出了实验结果和简要的分析。     

温度,压力对漂移室气体增益的影响

研究了温度及气体压力对漂移室（工作于正比区）气体放大倍数的影响，温度和气体压力的变化范围分别是５￣４０℃及９０￣１０５ｋＰａ。用实验数据拟合得到了函数关系并测量了几种饱和度下函数中的参数值。