Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

分流液压转向牵引计算的展开图及其应用

本文论及分流液压转向牵引计算的概念,方法及其展开图,并且提供了计算机绘制的展开图和应用实例。     

核医学成像技术中计算机的应用

由于计算机和核医学的结合,各种成像方法的计算机化医学图像层析技术正在迅速发展,并开始广泛应用。本文介绍各类成像技术中计算机的应用,特别评述其最近进展,并提出了今后的展望。     

推力矢量控制技术在导弹上的应用及发展

简要介绍了推力矢量控制技术的概念,分析了推力矢量控制的基本原理及特点.在简要分析其技术发展历程的基础上,给出了导弹推力矢量技术的现状和发展趋势.     

Fuzzy control of nitrogen removal in predenitrification process using ORP.

In order to meet increasingly stringent discharge standards, new applications and control strategies for the sustainable removal of nitrogen from wastewater have to be implemented. In the past years, numerous studies have been carried out dealing with the application of fuzzy logic to improve the control of the activated sludge process. In this paper, fuzzy control strategies of predenitrification systems are presented that could lead to better effluent quality and, in parallel, to a reduction of chemicals consumption. Extensive experimental investigations on lab scale plant studies have shown that there was excellent correlation between nitrate concentration and ORP value at the end of the anoxic zone. Results indicated that ORP could be used as an on-line fuzzy control parameter of nitrate recirculation and external carbon addition. The optimal value of ORP to control nitrate recirculation and external carbon addition was - 86 +/- 2 mV and - 90 +/- 2 mV, respectively. The results obtained with real wastewater also showed the good performance and stability of the fuzzy controllers independently from external disturbances. The integrated control structure of nitrate recirculation and external carbon addition in the predenitrification system is also presented.     

Nickel and chromium cycles: Stocks and flows project part IV

Nickel and chromium are essential ingredients in alloys increasingly important for energy-efficient, environmentally friendly modern technology. Quantitative assessment of the flows of these metals through the world economy from resource extraction to final disposal informs resource policy, energy planning, environmental science, and waste management. This article summarizes the worldwide technological cycles of nickel and chromium in 2000. Stainless steel is the major use of these metals, but they serve numerous other special needs, as in superalloys for high-temperature service, as plating materials, and in coinage. Because they are used primarily in alloys, novel recycling issues arise as their use becomes more widespread. “... the great New York and St. Louis double track, nickel plated railroad...” — Norwalk, Ohio, Chronicle 10 March 1881 announces arrival of surveyors for the future Nickel Plate Railway “Later [1911] I formed an alloy of Iron and Chromium, which showed remarkable resistance to rust and tarnish ... [It was] rediscovered by an Englishman named Brearley, in 1914.” —Elwood Haynes to Stephen F. Roberts, 17 January 1925     

Influence of the silicon surface treatment by plasma etching and scratching on the nucleation of diamond grown in HFCVD - a comparative study

A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with 1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers. Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332 cm⁻¹ and a peak at ∼1,580 cm⁻¹ for both samples.     

One‐step production of 2,3‐butanediol from starch by secretory over‐expression of amylase in Klebsiella pneumoniae

BACKGROUND: 2,3‐Butanediol (2,3‐BD) is a valuable chemical that can be biosynthesized from many kinds of substrates. For commercial biological production of 2,3‐BD, it is desirable to use cheap substrate without pretreatment, such as starch. However, there have been few reports on the production of 2,3‐BD directly from starch. RESULTS: In this work, gene malS coding for α‐amylase (EC 3.2.1.1) precursor was inserted into plasmid pUC18K, and secretory over‐expression of α‐amylase was achieved by engineered Klebsiella pneumoniae. The extracellular recombinant amylase accelerated the hydrolyzation of starch, and one‐step production of 2,3‐BD from starch was carried out by engineered K. pneumoniae. A 2,3‐BD concentration of 3.8 g L^?1 and yield of 0.19 g 2,3‐BD g^?1 starch were obtained after 24 h fermentation. CONCLUSION: The one‐step production of 2,3‐BD from starch was achieved by secretory over‐expression of amylase in K. pneumoniae. This would simplify the process and reduce the production cost considerably by enabling use of starch with minimal pretreatment. Copyright © 2008 Society of Chemical Industry