Adaptive control of arterial blood pressure with a learningcontroller based on multilayer neural networks

The authors discuss a two-model multilayer neural network controller for adaptive control of mean arterial blood pressure (MABP) using sodium nitroprusside. A model with an autoregressive moving average (ARMA), representing the dynamics of the system, and a modified backpropagation training algorithm are used to design the control system to meet specified objectives of design (settling time and undershoot/overshoot) and clinical constraints. The controller is associated with a weighting-determinant unit (WDU) to determine and update the output weighting factor of the parallel two-model neural network for adequate control action and a control-signal modification unit (CMU) to comply with clinical constraints and to suppress the effect of adverse noise and to improve the WDU performance. Extensive computer simulations indicate satisfactory performance and robustness of the proposed controller in the presence of much noise, over the full range of plant parameters, uncertainties, and large variations of parameters     

Quasi-saturation capacitance behavior of a DMOS device

This paper reports a simulation study on the capacitance characteristics of a double-diffused metal-oxide semiconductor (DMOS) device operating in the quasi-saturation region. From the analysis, the capacitance effect of the gate oxide upon the drift region cannot be modeled as an overlap capacitance, because the drain-gate/source-gate capacitances of the DMOS device may exceed the gate-oxide capacitance due to the larger voltage drop over the gate oxide than the change in the imposed gate bias when entering the quasi-saturation region. This effect can be the explanation for the plateau behavior in the gate charge plot during turn-on and turn-off of the DMOS device. Based on the small-signal equivalent capacitance model, the accumulated charge in the drift region below the gate oxide may thoroughly associate with the drain terminal in the prequasi-saturation region and with the source terminal in the quasi-saturation region     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

A 1.5-V full-swing bootstrapped CMOS large capacitive-load drivercircuit suitable for low-voltage CMOS VLSI

This paper reports a 1.5-V full-swing bootstrapped CMOS large capacitive-load driver circuit using two bootstrap capacitors to enhance the switching speed for low-voltage CMOS VLSI. For a supply voltage of 1.5 V, the full-swing bootstrapped CMOS driver circuit shows a 2.2 times improvement in switching speed in driving a capacitive load of 10 pF as compared to the conventional CMOS driver circuit. Even for a supply voltage of 1 V, this full-swing bootstrapped CMOS large capacitive-load driver circuit is still advantageous     

大庆老区水平井的矿场试验

通过大庆老区水平井矿场试验,可挖掘油层顶部的剩余油,提高油层采收率。笔者根据水平井地质评价技术,优选了水平井矿场试验区并设计轨迹。采用地质导向技术,实时监控钻井轨迹。根据水平井钻井轨迹,选择不同的射孔方式。先后完钻2口水平井,效果差别悬殊,尤其是钻出了大庆第一口日产百吨的高产水平井。从砂体沉积类型、河道砂体规模、韵律及夹层发育状况、注采井距、避水厚度、水平段的长度和射孔层位等方面,分析对比了2口典型水平井产能的影响因素。结果表明,水平井的设计必须与三次采油、区块层位的注采井网和储层沉积类型等相结合。     

鄂尔多斯盆地大牛地大型低渗气田成藏特征及其勘探开发技术

大牛地气田是位于鄂尔多斯盆地北部的一个大型致密-低渗透气田。主要含气层位自下而上为上石炭统太原组、下二叠统山西组和下石盒子组,是一套完整的海相潮坪-近海三角洲-陆相辨状河沉积层序,厚度250-280 m,横向稳定,宏观形态呈一巨大的“箱型”,受上石盒子组区域盖层物性和异常压力的双重封盖作用,工业气藏的发育被严格限制在该箱体内,多层大型岩性圈闭叠合发育,具有“近源箱型”成藏模式。针对岩性圈闭、致密-低渗透砂岩储层、自然产能低等难点,在气田的勘探开发中,形成了叠合岩性圈闭描述与评价、煤系地层地震储层预测等关键技术,并建立了以保护气层为重点的快速钻井综合技术、以提高产能为核心的致密气层大规模压裂改造技术等配套技术体系。     

Resource Reuse for D2D Communication in LTE Networks by Efficient Grouping

Wireless Personal Communications - Device to device (D2D) communication is a key technology of 5G mobile communications. It allows devices to communicate by using direct links, rather than...     

极低信噪比下对偶序列跳频信号的随机共振检测方法

针对对偶序列跳频(DSHF)在极低信噪比(SNR)下无法通信的问题,该文充分利用对偶序列跳频信号时、频域物理特征,提出一种随机共振(SR)检测方法,极大扩展该信号的应用场景。首先,通过分析对偶序列跳频的发射、接收信号及超外差解调的中频(IF)信号,构建随机共振系统,采用尺度变换调整中频信号;然后,引入判决时刻,将无定态解的非自治福克普朗克方程(FPE)转化为可解的自治方程,从而推导出含时间参量的概率密度周期定态解;其次,以最大后验概率为准则,得到检测概率、虚警概率和接收机工作特性(ROC)曲线;最后,得出以下结论：(1) 应用匹配随机共振检测对偶序列跳频信号的信噪比最低可达–18 dB;(2)对偶序列跳频与匹配随机共振结合,适用于信噪比在–18～–14 dB的信号检测;(3)应用匹配随机共振检测对偶序列跳频信号在信噪比为–14 dB时,检测性能提升了25.47%。仿真实验验证了理论的正确性。     

A 1-V 10.7-MHz fourth-order bandpass /spl Delta//spl Sigma/ modulators using two switched op amps

A 1-V 10.7-MHz fourth-order bandpass delta-sigma modulator using two switched opamps (SOPs) is presented. The 3/4 sampling frequency and the double-sampling techniques are adapted for this modulator to relax the required clocking rate. The presented modulator can not only reduce the number of SOPs, but also the number of capacitors. It has been implemented in 0.25-/spl mu/m 1P5M CMOS process with MIM capacitors. The modulator can receive 10.7-MHz IF signals by using a clock frequency of 7.13 MHz. A dynamic range of 62 dB within bandwidth of 200 kHz is achieved and the power consumption of 8.45 mW is measured at 1-V supply voltage. The image tone can be suppressed by 44 dB with respect to the carrier. The in-band third-order intermodulation (IM3) distortion is -65 dBc below the desired signal.     

More investigations of leakage and nonleakage conductor-backedcoplanar waveguide

Through rigorous full-wave analysis, the effective dielectric constant, normalized attenuation constant, characteristic impedance, and radiation pattern of two types of conductor-backed coplanar waveguides are obtained. The analytic results show that the leakage effect is not only controlled by the thickness and dielectric constant of the substrate but also by the slot width. The leakage power transforms to a radiation space wave and a surface wave, the transverse electric field diagrams in the substrate and the far-zone radiation pattern verify the leakage phenomenon. The first structure has the maximum radiation intensity in the endfire direction, while the second one which has more leaky waves radiates into the air, is better served as a radiating device. For both structures under the nonleakage condition, the characteristic impedance is sensitive to the change of the strip width but not the slot width. Using these properties, the nonleaky and leaky circuits can exist on the same circuit board by choosing appropriate circuit dimensions