模糊Smith预估控制在圆锥破碎机控制系统中的应用

针对圆锥破碎机控制系统是一个带有不确定时滞及非线性特性电振给矿机的大纯滞后系统,采用Smith预估控制和模糊控制相结合的串级控制,对系统的主、副回路进行设计,使系统在高性能下运行。     

运输问题的一种计算机算法

本文对运输问题的求解方法进行了分析,改进了传统的计算机算法,运用该方法编写程序,具有开发速度快、容易实现、代码短小的特点。文章不仅给出了算法的理论基础还给出了计算机实现时的一些技巧,对程序开发人员有很强的实用价值。     

OLE DB技术在工程应用程序开发中的应用

首先介绍了工程应用程序的特点,并以ORACLE系统为基础,探讨在该系统下,如何利用Oracle Provider for OLE DB开发一个优秀、通用的工程应用程序。     

基于区块链的分布式物联网信任管理方法研究

随着物联网(Internet of things, IoT)技术的发展,在不同的物联网之间逐渐形成了大规模、异构化、动态化的分布式物联网环境.分布式物联网内的设备间与物联网管理机构间存在着广泛的合作需求,为此需要在其中建立信任机制以促进合作.然而,现有的信任机制研究大部分脱离于物联网环境,没有考虑物联网设备计算与存储能力有限且差异较大这一特点,造成抽象信任机制研究无法直接应用于物联网中;另一方面,现有的物联网信任问题研究都依赖于额外的可信第三方或域间信任假设,这在实际中是难以实现的.为了解决上述问题,借助区块链与风险理论,提出一种适用于分布式物联网的信任管理方法.具体地,将信任量化为对期望信用与风险的考察,并借助区块链实现信任数据的有效共享与安全性.实验与分析表明:该方案能够有效量化信任,保护数据不被篡改,且能够以较低的存储开销维护系统的正常运行.     

某SPF实验动物中心净化空调系统的自动控制和节能

介绍了该工程自动控制和节能方面的特点,通过现场测试数据分析了该工程的实际运行状态,并提出了节能措施.     

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH₃-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH₂, NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH₂ radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH₃/Ar plasma PEALD involving oxygen participation or not is also discussed in the study.     

Design of cavern blasting based on controllable parameters

After a thorough review of some controllable parameters, which included field investigations, cavern dimensions, explosive, rock strength etc., cut, contour, lifters and stoping holes were introduced for blasting cavern of nucleus submarine. These design were conducted using a U. Langefors and B. Kihlstrom theory. Supported by the Navy Cavern Project Foundation of China (02)     

氯苯副产盐酸中微量苯和氯苯含量的测定

介绍了氯苯副产盐酸中微量苯和氯苯含量的测定方法、测定过程及测定结果。