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101.
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Liu Yongning 《International Journal of Fracture》1994,66(2):R39-R42
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Several soil- and atmospheric-correcting variants of the normalized difference vegetation index (NDVI) have been proposed to improve the accuracy in estimating biophysical plant parameters. In this study, a sensitivity analysis, utilizing simulated model data, was conducted on the NDVI and variants by analyzing the atmospheric- and soil-perturbed responses as a continuous function of leaf area index. Percent relative error and vegetation equivalent “noise” (VEN) were calculated for soil and atmospheric influences, separately and combined. The NDVI variants included the soil-adjusted vegetation index (SAVI), the atmospherically resistant vegetation index (ARVI), the soil-adjusted and atmospherically resistant vegetation index (SARVI), the modified SAVI (MSAVI), and modified SARVI (MSARVI). Soil and atmospheric error were of similar magnitudes, but varied with the vegetation index. All new variants outperformed the NDVI. The atmospherically resistant versions minimized atmospheric noise, but enhanced soil noise, while the soil adjusted variants minimized soil noise, but remained sensitive to the atmosphere. The SARVI, which had both a soil and atmosphere calibration term, performed the best with a relative error of 10 percent and VEN of ±0.33 LAI. By contrast, the NDM had a relative error of 20 percent and VEN of ±0.97 LAI 相似文献
106.
Ma Z.J. Chen J.C. Liu Z.H. Krick J.T. Cheng Y.C. Hu C. Ko P.K. 《Electron Device Letters, IEEE》1994,15(3):109-111
It has been reported that high-temperature (~1100°C) N2 O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate 相似文献
107.
钒冶炼焙烧添加剂选择研究 总被引:1,自引:0,他引:1
对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨,研究了几种常用添加剂的焙烧条件,分析比较了其性能,提出用NaCl-Na2CO3作焙烧添加剂替代NaCl可大幅度减少大气污染,提高冶钒转化率;且不改变工艺流程,无需设备投资,具有较好的经济效益和环境效益。 相似文献
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In this paper, the CdxHg1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ(3) was measured by the degenerate four wave mixing (DFWM). The values of χ(3) was in the range of 10-11-10-12 MO esu at wavelength of 1.06 μm. 相似文献
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