Sub-50 nm P-channel FinFET

High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-aligned to each other and to the source/drain (S/D) regions; 3) raised S/D regions; and 4) a short (50 nm) Si fin to maintain quasi-planar topology for ease of fabrication. The 45-nm gate-length p-channel FinFET showed an I_dsat of 820 μA/μm at V_ds=V_gs=1.2 V and T _ox=2.5 mm. Devices showed good performance down to a gate-length of 18 nm. Excellent short-channel behavior was observed. The fin thickness (corresponding to twice the body thickness) is found to be critical for suppressing the short-channel effects. Simulations indicate that the FinFET structure can work down to 10 nm gate length. Thus, the FinFET is a very promising structure for scaling CMOS beyond 50 nm     

The development of inflatable array antennas

Inflatable array antennas are being developed to significantly reduce the mass, the launch vehicle stowage volume, and the cost of future spacecraft systems. Three inflatable array antennas, previously developed for spacecraft applications, are a 3.3 m×1.0 m L-band synthetic-aperture radar (SAR) array, a 1.0 m-diameter X-band telecom reflectarray, and a 3 m-diameter Ka-band telecom reflectarray. All three antennas are similar in construction, and each consists of an inflatable tubular frame that supports and tensions a multi-layer thin-membrane RF radiating surface with printed microstrip patches, The L-band SAR array achieved a bandwidth of 80 MHz, an aperture efficiency of 74%, and a total mass of 15 kg. The X-band reflectarray achieved an aperture efficiency of 37%, good radiation patterns, and a total mass of 1.2 kg (excluding the inflation system). The 3 m Ka-band reflectarray achieved a surface flatness of 0.1 mm RMS, good radiation patterns, and a total mass of 12.8 kg (excluding the inflation system). These antennas demonstrated that inflatable arrays are feasible across the microwave and millimeter-wave spectrum. Further developments of these antennas are deemed necessary, in particular, in the area of qualifying the inflatable structures for space-environment usage     

用于视频对象平面生成的运动对象自动分割

新的视频编码标准MPEG-4具有基于内容的功能。它把图像序列分解成视频对象平面(VOP),每个VOP代表一个运动对象。文中提出了一种提取运动对象的新的视频序列分割算法,算法的核心是一个对象跟踪器,它利用Hausdorff距离将对象的二维二值模型与后续帧进行匹配,然后采用一种新的基于运动相连成分的模型刷新方法对模型的每一帧进行刷新。初始的模型自动产生,再利用滤波技术滤除静止背景,最后,利用二值模型从序列中提取出VOP。     

全业务网APON光纤接入传输系统

介绍在国家八六三计划资助下研制成功的全业务网接入传输系统 ,首先简述了系统构成、用户业务接口和传输帧结构 ,接着对 HFC双向光纤传输系统进行了简介 ,最后介绍了 ATM- PON系统和HFC系统的性能指标     

基于目标检测网络的轮对踏面缺陷检测方法

针对传统图像处理算法难以快速、准确识别轮对踏面缺陷的问题,提出一种采用双深度神经网络对轮对踏面缺陷进行检测的算法。该双网络分为踏面提取网络与缺陷识别网络。根据踏面为大目标的特点,分析与测试SSD网络,并用该网络提取轮对图像中的踏面区域。为提高踏面缺陷识别效率,在提取出踏面图像后,针对踏面缺陷属于中、小目标的特点,对YOLOv3网络结构进行优化得到M-YOLOv3。实验测试表明:提取踏面区域时,SSD算法的精度均值(AP)最高,达99.8%;识别踏面缺陷时,M-YOLOv3的AP达89.9%,相较于原始YOLOv3,单张图像计算耗时减少7.1%,同时AP仅有0.6%的损耗。结果表明,所提算法具有较高的检测准确率。     

Single-Crystalline TiO2(B) Nanobelts with Unusual Large Exposed {100} Facets and Enhanced Li-Storage Capacity

The {100} facet of single-crystalline TiO₂(B) is an ideal platform for inserting Li ions, but it is hard to be obtained due to its high surface energy. Here, the single-crystalline TiO₂(B) nanobelts from H₂Ti₃O₇ with nearly 70% {100} facets exposed are synthesized, which significantly enhances Li-storage capacity. The first-principle calculations demonstrate an ab in-plane 2D diffusion through the exposed {100} facets. As a consequence, the nanobelts can significantly accommodate Li ions in LiTiO₂ formula with specific capacity up to 335 mAh g⁻¹, which is in good agreement with the electrochemical characterizations. Coating with conductive and protective poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), the cut-off discharge voltage is as low as 0.5 V, leading to a capacity of 160.7 mAh g⁻¹ after 1500 cycles with a retention rate of 66% at 1C. This work provides a practical strategy to increase the Li-ion capacity and cycle stability by tailoring the crystal orientation and nanostructures.     

4G视频传输模块的硬件设计与信号完整性分析

提出一种基于TMS320DM6467T平台的嵌入式4G视频传输模块的硬件方案,该方案充分利用4G网络的高带宽,可以实现视频信号的快速传输。对方案的硬件设计进行了深入的探讨,分析了各个功能模块。介绍信号完整性分析的重要性,提出4G视频传输模块的信号完整性设计方案。应用HSPICE软件和IBIS模型对硬件电路板进行仿真分析,有效地解决了系统的LPDDR2接口电路中出现的反射、串扰等信号完整性(SI)方面的问题,提高了信号眼图质量,充分保证了电路板设计的质量和信号传输速度,满足视频信号传输的要求。     

PPMgLN中红外宽调谐脉冲光参变振荡器

采用半导体激光器(LD)端面抽运声光调Q的Nd:YVO4激光器做为抽运源,选用周期性极化掺氧化镁铌酸锂晶体(PPMg LN),通过优化抽运光光束质量和模式匹配,获得了中红外光参变振荡器。实验发现,对于确定的LD抽运功率,当重复频率较小,输出功率随着重复频率的增加而增加,但是达到某一重复频率时,输出功率便随着重复频率的增加而减少。改变PPMg LN晶体的周期,实现了中红外2.95~4.16 mm宽带调谐。     

太赫兹频段三倍频器设计中的关键问题

在太赫兹频段外差设备中,倍频源是重要的组成部件。最近几年,国内许多科研单位利用分立的平面肖特基二极管开展了关于太赫兹频段倍频器的研究。除了设计方法以外,仍有许多问题需要考虑。本文结合完成的225 GHz三倍频器的实际测试结果,从三方面讨论了在研制过程中遇到的关键问题。首先,二极管模型的准确性决定了仿真结果的可靠性。依据已知的管子Spice参数和倍频器测试结果,对肖特基二极管的物理结构尺寸和直流参数不断进行修正,直到仿真和测试结果趋于一致。其次,当大功率输入时,在肖特基结处会有热量的累积。因此进行了一个稳态热分析的仿真,结果显示当250 mW功率输入时,产生的最高温度大约为140°C,这对于该二极管而言是安全的。最后,在装配过程中会有很多不理想因素的引入,例如导电胶形状的不确定以及电路安装位置的偏移。在文章中会进一步计算出这些不理想因素对倍频器性能产生的影响。