Self‐Healing Reduced Graphene Oxide Films by Supersonic Kinetic Spraying

The industrial scale application of graphene and other functional materials in the field of electronics has been limited by inherent defects, and the lack of simple deposition methods. A simple spray deposition method is developed that uses a supersonic air jet for a commercially available reduced graphene oxide (r‐GO) suspension. The r‐GO flakes are used as received, which are pre‐annealed and pre‐hydrazine‐treated, and do not undergo any post‐treatment. A part of the considerable kinetic energy of the r‐GO flakes entrained by the supersonic jet is used in stretching the flakes upon impact with the substrate. The resulting “frozen elastic strains” heal the defects (topological defects, namely Stone‐Wales defect and C₂ vacancies) in the r‐GO flakes, which is reflected in the reduced ratio of the intensities of the D and G bands in the deposited film. The defects can also be regenerated by annealing.     

Statistical Models for Hot Electron Degradation in Nano-Scaled MOSFET Devices

In a MOS structure, the generation of hot carrier interface states is a critical feature of the item's reliability. On the nano-scale, there are problems with degradation in transconductance, shift in threshold voltage, and decrease in drain current capability. Quantum mechanics has been used to relate this decrease to degradation, and device failure. Although the lifetime, and degradation of a device are typically used to characterize its reliability, in this paper we model the distribution of hot-electron activation energies, which has appeal because it exhibits a two-point discrete mixture of logistic distributions. The logistic mixture presents computational problems that are addressed in simulation.     

Single, Depolarized, CW Supercontinuum-Based Wavelength-Division-Multiplexed Passive Optical Network Architecture With C-Band OLT, L-Band ONU, and U-Band Monitoring

We propose and experimentally demonstrate a novel bidirectional wavelength-division-multiplexed passive optical network architecture that fully utilizes the superior optical properties of an incoherent continuous-wave (CW) supercontinuum (SC) source. The proposed architecture, which incorporates low-cost Fabry-Perot laser diodes that have been wavelength locked by spectrum-sliced beams from a depolarized 130-nm-bandwidth CW SC source, is based on a unique wavelength band allocation scheme of the C-band for an optical line terminal (OLT), the L-band for optical network units (ONUs), and the U-band for channel monitoring. A cost-effective network that features a single broadband source at the OLT, and no additional wavelength- band-selective monitoring beam reflector at each ONU can be readily achieved. The experimental demonstration presented in this paper is carried out at a data rate of 622 Mb/s over a 25-km standard single-mode fiber.     

Detection of laryngeal function using speech andelectroglottographic data

The purpose of this research was to develop quantitative measures for the assessment of laryngeal function using speech and electroglottographic (EGG) data. We developed two procedures for the detection of laryngeal pathology: 1) a spectral distortion measure using pitch synchronous and asynchronous methods with linear predictive coding (LPC) vectors and vector quantization (VQ) and 2) analysis of the EGG signal using time interval and amplitude difference measures. The VQ procedure was conjectured to offer the possibility of circumventing the need to estimate the glottal volume velocity wave-form by inverse filtering techniques. The EGG procedure was to evaluate data that was "nearly" a direct measure of vocal fold vibratory motion and thus was conjectured to offer the potential for providing an excellent assessment of laryngeal function. A threshold based procedure gave 75.9 and 69.0% probability of pathological detection using procedures 1) and 2), respectively, for 29 patients with pathological voices and 52 normal subjects. The false alarm probability was 9.6% for the normal subjects.     

RuO2/GaN Schottky contact formation with superiorforward and reverse characteristics

This is a first time report of a ruthenium oxide (RuO₂) Schottky contact on GaN. RuO₂ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO₂ Schottky contact was annealed at 500°C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO₂ were dramatically improved. The annealed RuO₂ /GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system     

Inverted Staggered Poly-Si Thin-Film Transistor With Planarized SOG Gate Insulator

In this letter, we have studied the inverted staggered thin-film transistor (TFT) using a spin-on-glass (SOG) gate insulator and a low-temperature polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon. The p-channel poly-Si TFT exhibited a field-effect mobility of 48.2 cm²/V ldr s, a threshold voltage of -4.2 V, a gate-voltage swing of 1.2 V/dec, and a minimum off-current of < 4 times 10^-13A/ mum at V_ds = -0.1 V. Therefore, the gate planarization technology by SOG can be applicable to low-cost large-area poly-Si active-matrix displays.     

A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM

New investigations are presented here on a high-density and DRAM-like high-speed non-volatile memory (NVM) application of unified RAM (URAM). For a high-density application of URAM, multiple data storage is demonstrated with a multi-dual cell (MDC). Because each NVM state can be split by programming with a one-transistor (1T) DRAM without a capacitor, the total number of memory states can be doubled. Furthermore, a high-speed DRAM-level NVM scheme is proposed for the joint operation of 1T DRAM buffer programming and NVM post-background programming. The MDC and the proposed scheme are unique URAM properties that can extend the application range of memory devices.     

Unraveling the Significance of Li+/e−/O2 Phase Boundaries with a 3D-Patterned Cu Electrode for Li–O2 Batteries

The reaction kinetics at a triple-phase boundary (TPB) involving Li⁺, e⁻, and O₂ dominate their electrochemical performances in Li–O₂ batteries. Early studies on catalytic activities at Li⁺/e⁻/O₂ interfaces have enabled great progress in energy efficiency; however, localized TPBs within the cathode hamper innovations in battery performance toward commercialization. Here, the effects of homogenized TPBs on the reaction kinetics in air cathodes with structurally designed pore networks in terms of pore size, interconnectivity, and orderliness are explored. The diffusion fluxes of reactants are visualized by modeling, and the simulated map reveals evenly distributed reaction areas within the periodic open structure. The 3D air cathode provides highly active, homogeneous TPBs over a real electrode scale, thus simultaneously achieving large discharge capacity, unprecedented energy efficiency, and long cyclability via mechanical/electrochemical stress relaxation. Homogeneous TPBs by cathode structural engineering provide a new strategy for improving the reaction kinetics beyond controlling the intrinsic properties of the materials.     

Modeling and Simulation of New Encoding Schemes for High‐Speed UHF RFID Communication

In this paper, we present novel high‐speed transmission schemes for high‐speed ultra‐high frequency (UHF) radio‐frequency identification communication. For high‐speed communication, tags communicate with a reader using a high‐speed Miller (HS‐Miller) encoding and multiple antennas, and a reader communicates with tags using extended pulse‐interval encoding (E‐PIE). E‐PIE can provide up to a two‐fold faster data rate than conventional pulse‐interval encoding. Using HS‐Miller encoding and orthogonal multiplexing techniques, tags can achieve a two‐ to three‐fold faster data rate than Miller encoding without degrading the demodulation performance at a reader. To verify the proposed transmission scheme, the MATLAB/Simulink model for high‐speed backscatter based on an HS‐Miller modulated subcarrier has been designed and simulated. The simulation results show that the proposed transmission scheme can achieve more than a 3 dB higher BER performance in comparison to a Miller modulated subcarrier.