Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications

The high-pressure electro-dynamic gradient (HP-EDG) crystal-growth technology has been recently developed and introduced at eV PRODUCTS to grow large-volume, semi-insulating (SI) CdZnTe single crystals for room-temperature x-ray and gamma-ray detector applications. The new HP growth technology significantly improves the downstream CdZnTe device-fabrication yield compared to earlier versions of the HP crystal-growth technology because of the improved structural and charge-transport properties of the CdZnTe ingots. The new state-of-the-art, HP-EDG crystal-growth systems offer exceptional flexibility and thermal and mechanical stability and allow the growth of high-purity CdZnTe ingots. The flexibility of the multi-zone heater system allows the dynamic control of heat flow to optimize the growth-interface shape during crystallization. This flexibility combined with an advanced control system, improved system diagnostics, and realistic heat-transport modeling provides an excellent platform for continuing process development. Initial results on large-diameter (140 mm), SI Cd_1−xZn_xTe (x=0.1) ingots grown in low temperature gradients with the HP-EDG technique show reduced defect density and complete elimination of ingot cracking. The increased single-crystal yield combined with the improved charge transport allows the fabrication of large-volume, high-sensitivity, high energy-resolution detector devices at increased yield. The CdZnTe ingots grown to date produced large-volume crystals (≥1cm³) with electron mobility-lifetime product (μτ_e) in the (3–7) × 10⁻³ cm²/V range. The lower-than-desired charge-transport uniformity of the HP-EDG CdZnTe ingots is associated with the high density of Te inclusions formed in the ingots during crystallization. The latest process-development efforts show a reduction in the Te-inclusion density, an increase of the charge-transport uniformity, and improved energy resolution of the large-volume detectors fabricated from these crystals.     

Singular value decomposition based fusion for super-resolution image reconstruction

In this paper, we address a super-resolution problem of generating a high-resolution image from low-resolution images. The proposed super-resolution method consists of three steps: image registration, singular value decomposition (SVD)-based image fusion and interpolation. The contribution of this work is two-fold. First we customize an image registration approach using Scale Invariant Feature Transform (SIFT), Belief Propagation and Random Sampling Consensus (RANSAC) for super-resolution. Second, we propose SVD-based fusion to integrate the important features from the low-resolution images. The proposed image registration and fusion steps effectively maintain the important features and greatly improve the super-resolution results. Results, for a variety of image examples, show that the proposed method successfully generates high-resolution images from low-resolution images.     

Key processing with control vectors

A method is presented for controlling cryptographic key usage based on control vectors. Each cryptographic key has an associated control vector that defines the permitted uses of the key within the cryptographic system. At key generation, the control vector is cryptographically coupled to the key by way of a special encryption process. Each encrypted key and control vector are stored and distributed within the cryptographic system as a single token. Decryption of a key requires respecification of the control vector. As part of the decryption process, the cryptographic hardware verifies that the requested use of the key is authorized by the control vector. This article focuses mainly on the use of control vectors in cryptosystems based on the Data Encryption Algorithm.     

Laser-Printed Plasmonic Metasurface Supporting Bound States in the Continuum Enhances and Shapes Infrared Spontaneous Emission of Coupled HgTe Quantum Dots

In order to advance the development of quantum emitter-based devices, it is essential to enhance light-matter interactions through coupling between semiconductor quantum dots with high quality factor resonators. Here, efficient tuning of the emission properties of HgTe quantum dots in the infrared spectral region is demonstrated by coupling them to a plasmonic metasurface that supports bound states in the continuum. The plasmonic metasurface, composed of an array of gold nanobumps, is fabricated using single-step direct laser printing, opening up new opportunities for creating exclusive 3D plasmonic nanostructures and advanced photonic devices in the infrared region. A 12-fold enhancement of the photoluminescence in the 900–1700 nm range is observed under optimal coupling conditions. By tuning the geometry of the plasmonic arrays, controllable shaping of the emission spectra is achieved, selectively enhancing specific wavelength ranges across the emission spectrum. The observed enhancement and shaping of the emission are attributed to the Purcell effect, as corroborated by systematic measurements of radiative lifetimes and optical simulations based on the numerical solution of Maxwell's equations. Moreover, coupling of the HgTe photoluminescence to high quality factor modes of the metasurface improves emission directivity, concentrating output within an ≈20° angle.     

Intrinsically Low Thermal Conductivity in BiSbSe3: A Promising Thermoelectric Material with Multiple Conduction Bands

Bi₂Se₃, as a Te‐free alternative of room‐temperature state‐of‐the‐art thermoelectric (TE) Bi₂Te₃, has attracted little attention due to its poor electrical transport properties and high thermal conductivity. Interestingly, BiSbSe₃, a product of alloying 50% Sb on Bi sites, shows outstanding electron and phonon transports. BiSbSe₃ possesses orthorhombic structure and exhibits multiple conduction bands, which can be activated when the carrier density is increased as high as ≈3.7 × 10²⁰ cm^?3 through heavily Br doping, resulting in simultaneously enhancing the electrical conductivities and Seebeck coefficients. Meanwhile, an extremely low thermal conductivity (≈0.6–0.4 W m^?1 K^?1 at 300–800 K) is found in BiSbSe₃. Both first‐principles calculations and elastic properties measurements show the strong anharmonicity and support the ultra‐low thermal conductivity of BiSbSe₃. Finally, a maximum dimensionless figure of merit ZT ～ 1.4 at 800 K is achieved in BiSb(Se_0.94Br_0.06)₃, which is comparable to the most n‐type Te‐free TE materials. The present results indicate that BiSbSe₃ is a new and a robust candidate for TE power generation in medium‐temperature range.     

Atomistic Origin of the Enhanced Crystallization Speed and n‐Type Conductivity in Bi‐doped Ge‐Sb‐Te Phase‐Change Materials

Phase‐change alloys are the functional materials at the heart of an emerging digital‐storage technology. The GeTe‐Sb₂Te₃ pseudo‐binary systems, in particular the composition Ge₂Sb₂Te₅ (GST), are one of a handful of materials which meet the unique requirements of a stable amorphous phase, rapid amorphous‐to‐crystalline phase transition, and significant contrasts in optical and electrical properties between material states. The properties of GST can be optimized by doping with p‐block elements, of which Bi has interesting effects on the crystallization kinetics and electrical properties. A comprehensive simulational study of Bi‐doped GST is carried out, looking at trends in behavior and properties as a function of dopant concentration. The results reveal how Bi integrates into the host matrix, and provide insight into its enhancement of the crystallization speed. A straightforward explanation is proposed for the reversal of the charge‐carrier sign beyond a critical doping threshold. The effect of Bi on the optical properties of GST is also investigated. The microscopic insight from this study may assist in the future selection of dopants to optimize the phase‐change properties of GST, and also of other PCMs, and the general methods employed in this work should be applicable to the study of related materials, for example, doped chalcogenide glasses.     

Nanowire-Based Soft Wearable Human–Machine Interfaces for Future Virtual and Augmented Reality Applications

A virtual world has now become a reality as augmented reality (AR) and virtual reality (VR) technology become commercially available. Similar to how humans interact with the physical world, AR and VR systems rely on human–machine interface (HMI) sensors to interact with the virtual world. Currently, this is achieved via state of-the-art wearable visual and auditory tools that are rigid, bulky, and burdensome, thereby causing discomfort during practical application. To this end, a skin sensory interface has the potential to serve as the next-generation AR/VR technology because skin-like wearable sensors have advantages in that they can be ultrathin, ultra-soft, conformal, and imperceptible, which provides the ultimate comfort and immersive experience for users. In this progress report, nanowire-based soft wearable HMI sensors including acoustic, strain, pressure sensors, and physiological sensors are reviewed that may be adopted as skin sensory inputs in future AR/VR systems. Further, nanowire-based soft contact lenses, haptic force, and thermal and vibration actuators are covered as potential means of feedback for future AR/VR systems. Considering the possible effects of the virtual world on human health, skin-like wearable artery pulses, glucose, and lactate sensors are also described, which may enable imperceptible health monitoring during future AR/VR practices.     

Orthorhombic Ti2O3: A Polymorph‐Dependent Narrow‐Bandgap Ferromagnetic Oxide

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long‐wavelength regimes. In this work, the discovery of orthorhombic‐structured Ti₂O₃ films is reported as a unique narrow‐bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well‐known corundum‐structured Ti₂O₃ polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti₂O₃ thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti₂O₃ polymorph is found to be n‐type with a very high electron concentration, while the bulk‐type trigonal‐structured Ti₂O₃ is p‐type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti₂O₃, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti₂O₃, which is confirmed by X‐ray magnetic circular dichroism measurements. Using first‐principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti₂O₃. The room‐temperature ferromagnetism observed in orthorhombic‐structured Ti₂O₃, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.     

Binary Controls on Interfacial Magnetism in Manganite Heterostructures

The complex interfacial correlations provide new routes toward tunable functionalities. Here, the wide range of tunabilities for magnetic properties are presented, including Curie temperature (from 245 to 320 K), coercive field (from 2 to 205 Oe), and saturated magnetic moment (from 0.9 to 2.8 µ_B Mn^?1), in a 9‐unit‐cell La_2/3Sr_1/3MnO₃ (LSMO) layer via modifying interfacial boundary conditions. Moreover, the LSMO/PbTiO₃‐based multilayers and superlattices that consist of PbTiO₃/LSMO/NdGaO₃ and PbTiO₃/LSMO/PbTiO₃ interfaces are characterized by two distinct Curie temperatures and coercive fields. The results reveal the feasibility of the interface‐resolved strategy based on boundary modification in fabricating potential devices with multiple accessible states for information storage. The wide‐range modulations on magnetic properties at LSMO/titanate interfaces are explained in terms of binary controls arising from the oxygen octahedral coupling (OOC) and magnetoelectric coupling (MEC). The results not only shed some light on understanding interfacial correlations in oxide heterostructures, but also pave an alternative path for exploring multiple accessible states in all‐oxide‐based electronic devices.     

离子注入后品圆清洗带来的材料和掺杂剂损失的测量

对45nm及以下技术节点的逻辑器件嗣造来说,经过次数不断增加的高剂量离子注入光阻层的清洗步骤后,仍保持超浅结（USJ）的完整性非常重要。在PMOS区采用SiGe带来了材料方面的又—挑战。一种新型短循环法可精确测量各种去胶储洗工艺造成的非晶硅或SiGe的损失量。