Quantitation of vitamin K in human milk

A quantitative method was developed for the assay of vitamin K in human colostrum and milk. The procedure combines preparative and analytical chromatography on silica gel in a nitrogen atmosphere followed by reversed phase high performance liquid chromatography (HPLC). Two HPLC steps were used: gradient separation with ultraviolet (UV) detection followed by isocratic separation detected electrochemically. Due to co-migrating impurities, UV detection alone is insufficient for identification of vitamin K. Exogenous vitamin K was shown to equilibrate with endogenous vitamin K in the samples. A statistical method was incorporated to control for experimental variability. Vitamin K₁ was analyzed in 16 pooled milk samples from 7 donors and in individual samples from 15 donors at 1 month post-partrum. Vitamin K₁ was present at 2.94±1.94 and 3.15±2.87 ng/mL in pools and in individuals, respectively. Menaquinones, the bacterial form of the vitamin, were not detected. The significance of experimental variation to studies of vitamin K in individuals is discussed.     

Waveguide polarization-independent optical circulator

We fabricated a new type of waveguide polarization-independent optical circulator which does not need a polarization-beam splitter. The circulator is based on a non-reciprocal Mach-Zehnder interferometer which consists of two waveguide Faraday rotators, two thin-film half-waveplates and two planar lightwave circuit-type 3-dB couplers. The fabricated circulator provides a 14.0-23.7-dB isolation and a 3.0-3.3 dB insertion loss at λ=1.55 μm. This circulator presents a new possibility for developing non-reciprocal devices in the field of integrated optics     

Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits

Two types of nanophotonic technologies—two-dimensional photonic crystal (2D PC) slab waveguides (WGs) and quantum dots (QDs)—were developed for key photonic device structures in the future. For an ultrafast digital photonic network, an ultrasmall and ultrafast symmetrical Mach–Zehnder (SMZ)-type all-optical switch (PC-SMZ) and an optical flip–flop device (PC-FF) have been developed. To realize these devices, one method is to develop a selective-area molecular beam epitaxial growth QD technique by employing a metal mask method. Another method is to establish a new design method, i.e., topology optimization of the 2DPC WG with a wide and flat bandwidth, high transmittance, and low reflectivity. We also fabricated an optical microcavity in a photonic crystal slab embedded with GaAs QDs by droplet epitaxy. The Purcell effect on the exciton emission of GaAs QDs was confirmed by microphotoluminescence and lifetime measurements.     

A single-power-supply 10-b video BiCMOS sample-and-hold IC

A +5-V single-power-supply 10-b video BiCMOS sample-and-hold IC is described. Video speed, low power, and 10-b accuracy sample-and-hold operation have been achieved using a complementary connected buffer format sample switch. A high-speed p-n-p transistor used in the sample switch is formed by a combination of n-p-n and PMOS transistors. The sample-and-hold operation is accomplished by feeding back the hold capacitor voltage to the sample switch inputs, so that the inputs transfer symmetrically for the hold capacitor voltage at any input level. The sample-and-hold IC has been implemented in 1.2-μm BiCMOS technology and evaluated. The following results have been obtained: 185-MHz 3-dB bandwidth at 22-pF hold capacitor, 63-dB signal-to-noise ratio at 8-MHz full-scale input, 20-ns acquisition time at 1-V step input, 15-ns switch setting time, and 0.1% linearity error. Power dissipation is 150 mW     

A realization of a below-1-V operational and 30-MS/s sample-and-hold IC with a 56-dB signal-to-noise ratio by applying the current-based circuit approach

This paper demonstrates the low-voltage and low-power operation of a MOS sample-and-hold circuit while preserving speed and accuracy, aiming at the realization of a pipelined low-voltage and low-power analog-to-digital converter on a system large-scale integrated circuit. It was fabricated by utilizing 0.35-/spl mu/m CMOS technology. The main feature of this circuit is that all the input, signals, and output are in the current form. The circuit consists of simple current mirrors. In order to eliminate the signal-dependent current transfer ratio error, voltages at the drain terminals of mirror transistors are fixed as constant. A source degeneration resistor, which is a transistor in the triode operational region, is connected to a mirror transistor in order to alleviate the influence of the threshold and transconductance parameter variations. Control signals are boosted in voltage and applied to the gate of switch NMOS transistors in the signal path in order to reduce the on-resistance of analog switches. A differential configuration is adopted throughout the entire circuit and effectively cancels switch feedthrough errors. As a result, a 30-MS/s operation with a signal-to-noise ratio (SNR) of 56 dB from a 1-V supply has been achieved, when the input current is /spl plusmn/200 /spl mu/A. The chip even operated down to 0.85 V with a 20-MHz clock. The SNR was measured as 50 dB with an input current of /spl plusmn/100 /spl mu/A.     

Thermal and mechanical stability of soldering QFP with Sn-Bi-Ag lead-free alloy

Thermal stability of the circuit boards with a quad flat package (QFP) soldered with Sn-58wt%Bi-(0, 0.5 and 1.0) wt% Ag and their microstructural features were evaluated. The addition of 1.0 wt% Ag causes the formation of large primary Ag/sub 3/Sn precipitates in the solder while no primary Ag/sub 3/Sn is found in Sn-57Bi-0.5Ag. Thermo-Calc calculation indicates that the lowest limit content for the formation of primary Ag/sub 3/Sn is about 0.8 wt%. Heat-exposure below 100/spl deg/C has no serious degradation on the joint structure for all solders. Heat-exposure at 125/spl deg/C caused serious degradation in joint strength for all alloys. The contamination of Pb from Sn-Pb surface plating on the components reduces the interface tolerance by forming ternary Sn-Pb-Bi phase melting at low temperature. Thermal fatigue between -20 and 80/spl deg/C does not have any significant influence on joint structure.     

Ultrawide-band La-codoped Bi/sub 2/O/sub 3/-based EDFA for L-band DWDM systems

The demonstration of a 253-cm-long lanthanum-codoped Bi/sub 2/O/sub 3/-based erbium-doped fiber which provides gain of greater than 20 dB and noise figure less than 6.7 dB to 142 dense wavelength-division-multiplexing channels simultaneously over an extended wavelength range of 58 nm from 1554 to 1612 nm is reported. The 3-dB (gain of 17-20 dB) bandwidth of the erbium-doped fiber amplifier is 54 nm when it is pumped with 350 mW of 1480-nm light. The power conversion efficiency of the fiber is about 54%.     

High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE

Planar-structure InP/InGaAsP/InGaAs avalanche photo-diodes have been realised by using a VPE-growth technique and a Be+ implanted guard ring. Sensitivity measurement has been performed at 1.3 ?m and 1.8 Gbit/s. The minimum average received level required for 10?9 BER was ?31.3 dBm, which was 1.2 dB better than the value for the Ge-APD.