Deformation Behavior of Metastable Austenitic Steel at Low and Moderate Temperatures

Metal Science and Heat Treatment - The TRIP effect and deformation behavior of metastable austenitic steel were studied under tension in the temperatures range from –120 to +200°C. The...     

Effect of Retrogression and Re-Aging on Tensile Mechanical Properties in Transverse Direction of Extruded Rods from Aluminum Alloy AA7049

Metal Science and Heat Treatment - The effect retrogression and re-aging (RRA treatment) on the tensile properties in the transverse direction of extruded rods from aluminum alloy AA7049 is...     

Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs

A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOSFET in weak inversion. This 2D potential distribution model is used to analytically derive an expression for the subthreshold slope and threshold voltage. A drain current model for lightly doped symmetrical DG MOSFETs is then presented by considering weak and strong inversion regions including short channel effects, series source to drain resistance and channel length modulation parameters. These derived models are compared with the simulation results of the SILVACO (Atlas) tool for different channel lengths and silicon film thicknesses. Lastly, the effect of the fixed oxide charge on the drain current model has been studied through simulation. It is observed that the obtained analytical models of symmetrical double gate MOSFETs are in good agreement with the simulated results for a channel length to silicon film thickness ratio greater than or equal to 2.     

Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV

Through-silicon vias (TSVs) have provided an attractive solution for three-dimensional (3D) integrated devices and circuit technologies with reduced parasitic losses and power dissipation, higher input-output (I/O) density and improved system performance. This paper investigates the propagation delay and average power dissipation of single-walled carbon nanotube bundled TSVs having different via radius and height. Depending on the physical configuration, a comprehensive and accurate analytical model of CNT bundled TSV is employed to represent the via (vertical interconnect access) line of a driver-TSV-load (DTL) system. The via radius and height are used to estimate the bundle aspect ratio (AR) and the cross-sectional area. For a fixed via height, the delay and the power dissipation are reduced up to 96.2% using a SWCNT bundled TSV with AR = 300 : 1 in comparison to AR = 6 : 1.     

Study of Temperature Dependence of Electrode–Glass Ceramic Interface Using Impedance Spectroscopy

The electrical behavior of strontium titanate borosilicate glass ceramics (SrO.TiO₂- 2SiO₂.B₂O₃) with additives K₂O, La₂O₃, CoO and Nb₂O₅ was studied by using Impedance Spectroscopy as a function of temperature and composition. An equivalent circuit model having three parallel RC's connected in series with a capacitor C₄ could represent the data well. By comparing the complex modulus plots with simulated ones and looking at the values of the time constants these RC's were attributed to represent crystalline, glassy and glass-crystal interface regions of the glass- ceramic whereas C₄ represented the glass-ceramic sample and contact electrode interface. When the glass ceramic sample contained only SrTiO₃ crystalline phase and the remaining glassy matrix, the interface capacitance showed an Arrhenius type of nature with an activation energy (0.11 ± 0.04) eV and when the glass- ceramic sample contained number of crystalline phases no clear cut trend appeared. These findings are useful in selecting suitable electrodes for applications as well as in deciding upon experimental techniques for measurement of dielectric constants of materials.     

Analysis of Fatty Acid and Lignan Composition of Indian Germplasm of Sesame to Evaluate Their Nutritional Merits

An attempt was made to individually analyze a germplasm collection of 54 indigenous Indian sesame cultivars for fatty acid and lignan composition of their seed oil by gas chromatography and high performance liquid chromatography, respectively. The entries varied in their fatty acid and lignan composition. The mean percentage contents of palmitic, stearic, oleic, linoleic and α‐linolenic acids ranged between 10–22, 5–10, 38–50, 18–43 and less than 1 whereas sesamol, sesamin and sesamolin scored between 3–37, 27–67, 20–59 of the total percentage of lignan, respectively. The highest percentage of α‐linolenic acid (ALA) was obtained in Var‐9 (1.3 % of the total fatty acids). Among the lignans, high sesamin content is considered to be significant, particularly in terms of long shelf life and nutraceutical value of sesame seed oil. The study has broadened our understanding related to differential biochemical composition of the rich sesame germplasms, thereby providing us with a useful groundwork for identifying potential targets and suitable cultivars for genetic engineering approaches to be undertaken in order to improve the nutritional quality of sesame oil, which in turn would be beneficial towards human health.     

Carbon Doping in Boron Suboxide: Structure,Energetics, and Elastic Properties

The structural, electronic, and elastic properties of pristine and carbon‐doped boron suboxide (B₆O) are calculated using density functional theory. The results indicate that it is energetically preferable for a single carbon atom to substitute into an oxygen site rather than a boron site. The lattice parameters and cell volume increase to relieve the residual stress created by the carbon substitution. The interstitial position is not favorable for a single atom substitution. However, if two carbon atoms substitute for two neighboring oxygen atoms, then it becomes energetically favorable to dope an interstitial oxygen, boron, or carbon atom along the C–C chain. If the interstitial dopant is either boron or carbon, a local B₄C‐like structure with either a C–B–C or C–C–C chain is created within the boron suboxide unit cell. The resulting structure shows improvements in the bulk modulus at the expense of the shear and Young's moduli. The moduli further improve if an additional carbon is substituted within a polar or equatorial site of the neighboring B₁₂ icosahedron. Based on these calculations, we conclude that carbon doping can either harden or soften B₆O depending on the manner in which the substitutions are populated. Furthermore, as B₆O samples are often oxygen deficient, C doping can occupy such sites and improve the elastic properties.     

Phase Evolution,Magnetic, Optical,and Dielectric Properties of Zr‐Substituted Bi0.9Gd0.1FeO3 Multiferroics

Polycrystalline BiFeO₃ (BFO) and Bi_0.90Gd_0.10Fe_1?xZr_xO₃ (x = 0.0–0.10; BGFZ_x) ceramics were synthesized by solid‐state reaction method. Rietveld analysis of X‐ray diffraction patterns showed that BFO and BGFZ_x = 0.0 samples are stabilized in rhombohedral structure (space group R3c), whereas a small fraction of orthorhombic phase (space group Pn2₁a) is observed for BGFZ_{x = 0.03–0.10} samples. Suppression and disappearance of some Raman modes indicated a structural phase transition with addition of Zr dopant at Fe site. Magnetic measurements exhibited weak ferromagnetic behavior of BGFZ_x samples with increasing Zr⁺⁴ concentrations. The insertion of Gd⁺³ ions at Bi⁺³ sites and nonmagnetic Zr⁺⁴ ions at Fe⁺³ sites in Fe–O–Fe network suppressed the spin cycloid structure of BFO which in turn enhanced the magnetization of these ceramics. Electron spin resonance spectra revealed the breaking of spin cycloid of BFO due to the development of free spins with addition of Zr⁺⁴ dopants at Fe sites. UV–Visible diffuse reflectance spectra showed one d–d crystal field transition and two charge‐transfer (C–T) transitions along with a sharp absorption of light in visible region for all samples. Almost frequency‐independent dielectric constant and dielectric loss along with very low values of dielectric loss indicated greatly improved dielectric properties for BGFZ_{x = 0.03–0.10} samples.