A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

Growth,characterization and electrical anisotropy in GaTe—a natural semiconducting superlattice

GaTe is a III–VI semiconductor which has layered structure with large anisotropy in electrical properties. Growth of single crystals by the Bridgman technique permitted the measurement of thermoelectric power in orthogonal directions from which the anisotropy of hole effective masses were determined for the first time. From resistivity and Hall effect measurements the carrier activation energies and scattering mechanisms between 10–300°K were found. Study of the temperature dependence of conductivity revealed a variety of conduction mechanisms including weak localization below 20°K, hopping conduction between 20–50 K and band conduction in and across the layer planes atT>70 K. Weak localization was confirmed through observation of negative magnetoresistance. TheI–V characteristics showed quantized behaviour due to tunneling across potential barriers, which may be due to stacking faults between layer planes as observed by TEM studies.     

What decides: high mortality in paediatric acute renal failure?

Forty paediatric cases of A.R.F. (Acute Renal Failure) of various aetiology were included in the study. 60% of patients were less than 4 years of age with male predominance. 80% cases reported to us very late with oligoanuria of more than 24 hours (2-7 days). Diarrhoea, vomiting and fever were other dominant symptoms. Maximum cases were severely anaemic (87.5%) with mean Hb 7.73 +/- 1.9 gm%. 40% cases were of underweight while only one case (2.5%) was of over weight, inspite of volume excess in 40% cases. All 24 cases, who were estimated for serum albumin, found to have marked hypoalbuminemia. Mortality was found to be as high as 65% inspite of effective peritoneal dialysis in all cases. High mortality seems to be due to profound anuria of many days (because of marked delay in reaching the hospital), fever and malnutrition besides other factors as aetiology.     

Electron energy distribution at the insulator-semiconductorinterface in AC thin film electroluminescent display devices

Electron emission from insulator-semiconductor interface in ZnS:Mn ac thin film electroluminescent (ACTFEL) display devices was investigated by studying the current and field waveforms. A new technique for measuring the interface electron energy distribution at insulator-semiconductor interfaces was developed. The technique involves the measurement of tunnel current transients and can be used to study the interface electron energy distribution between any insulator-semiconductor pair with which an ac thin film test structure can be fabricated. It was applied to a ZnS:Mn display device at two temperatures of 10 K and 300 K and to a metal interface device structure