A 16 MHz, 59.2 ppm/°C CMOS DLL-Assisted VCO with Improved Frequency Stability Towards Single Chip Wireless IOT

A 16 MHz, highly stable voltage controlled oscillator (VCO) is reported in this paper. The proposed VCO consists of three cross-coupled RC stages, and is fully compatible with standard CMOS process. A positively biased PN junction with negative temperature coefficient is incorporated in the design to compensate frequency drift. In addition, a delay locked loop (DLL) directly following the VCO is utilized to further improve the output stability caused by temperature variations. The designed circuit was implemented using CMOS 0.18 μm technology, and was validated through experiments. Measurement results show that the DLL-assisted VCO output variation across the 25~120 °C temperature range is less than 0.56 %, corresponding to 59.2 ppm/°C. It also shows that the output standard deviation of the DLL-assisted VCO is only 6.816 KHz, ~ 16.6 % better compared with the same VCO without DLL’s assistance.     

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon underpins microelectronics but lacks the photonic capability needed for next‐generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare‐earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the first observation of direct optical transitions from the silicon band edge to internal f‐levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu‐implanted silicon devices display a greatly enhanced electroluminescence efficiency of 8%. Also observed is the first crystal field splitting in Ce luminescence. Mid‐IR silicon photodetectors with specific detectivities comparable to existing state‐of‐the‐art mid‐IR detectors are demonstrated.     

量子绝热近似条件与量子几何势

阐述了传统量子绝热定理,给出了传统的量子绝热近似条件.基于传统的量子绝热近似条件存在不足,采用微扰论思想,通过 绝热变换不变,给出并讨论了新的绝热理论以及新的绝热近似条件.最后对新的绝热条件中所包含量子几何势的几何性进行了较为深入的分析和讨论.     

Conductive Hydrogel-Based Electrodes and Electrolytes for Stretchable and Self-Healable Supercapacitors

Stretchable self-healing supercapacitors (SCs) can operate under extreme deformation and restore their initial properties after damage with considerably improved durability and reliability, expanding their opportunities in numerous applications, including smart wearable electronics, bioinspired devices, human–machine interactions, etc. It is challenging, however, to achieve mechanical stretchability and self-healability in energy storage technologies, wherein the key issue lies in the exploitation of ideal electrode and electrolyte materials with exceptional mechanical stretchability and self-healing ability besides conductivity. Conductive hydrogels (CHs) possess unique hierarchical porous structure, high electrical/ionic conductivity, broadly tunable physical and chemical properties through molecular design and structure regulation, holding tremendous promise for stretchable self-healing SCs. Hence, this review is innovatively constructed with a focus on stretchable and self-healing CH based electrodes and electrolytes for SCs. First, the common synthetic approaches of CHs are introduced; then the stretching and self-healing strategies involved in CHs are systematically elaborated; followed by an explanation of the conductive mechanism of CHs; then focusing on CH-based electrodes and electrolytes for stretchable self-healing SCs; subsequently, application of stretchable and self-healing SCs in wearable electronics are discussed; finally, a conclusion is drawn along with views on the challenges and future research directions regarding the field of CHs for SCs.     

High-Responsivity Photodetector in Standard SiGe BiCMOS Technology

For high-speed optoelectronic applications such as fiber-optic data communication systems, photodetectors (PDs) with high responsivity in Si-related processes are required. In this letter, a result of the effort along this line is reported. A novel device named phototransistor PD (PTPD) was realized in a commercial 0.35-mum SiGe BiCMOS technology. The device combines a surface PD (SPD) and a conventional SiGe heterojunction PT (HPT). It was shown that the SPD enhanced light absorption and the PTPD showed significant performance improvement over HPT. Responsivities of 5.2 A/W for an 850-nm light and 9.5 A/W for a 670-nm light were achieved in the PTPD, with floating base and SPD terminals.     

基于朗伯型反射微结构的LED室内照明光源设计

提出了一种基于朗伯型反射面的LED间接照明系统,即LED光源出射的光全部通过朗伯型反射面反射后再照射目标区域,该系统具有光源亮度均匀、灯具效率高等优点,很好地解决了高亮度LED点光源给室内照明带来的眩光问题。首先提出了一种能够很好逼近朗伯反射面的复合型微结构表面,并通过Lighttools光学仿真对其分布参数进行了优化,使最终结果在不同光线入射角的情况下,都具有较理想的余弦反射特性。在此基础上,设计了整体光学系统,使其实现了近180°范围的角度亮度的均匀性和高达84.7%的灯具效率,验证了间接照明方法的可行性。     

High-speed Modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-/spl mu/m emission wavelength

1.27-/spl mu/m InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C.     

A novel motor drive design for incremental motion system via sliding-mode control method

This paper proposes a particular motor position control drive design via a novel sliding-mode controller. The newly designed controller is especially suitable for the motor incremental motion control which is specified by a trapezoidal velocity profile. The novel sliding-mode controller is designed in accordance with the trapezoidal velocity profile to guarantee the desired performance. A motor control system associated PC-based incremental motion controller with permanent-magnet synchronous motor is built to verify the control effect. The validity of the novel incremental motion controller with sliding-mode control method is demonstrated by simulation and experimental results.     

Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer

A very low minimum noise figure (NF/sub min/) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-/spl mu/m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 /spl mu/m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF/sub min/ and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.     

毫米波辐射下悬液细胞膜电压变化研究

根据有效介质理论,用Maxwell-Wagner等效公式计算细胞悬液中的平均场．然后基于时变场中单细胞膜电压第二计算模型,用场近似等效方法,建立了毫米场辐射下悬液中细胞膜电压计算模型．模型表明悬液细胞膜电压变化和毫米波的功率、频率、细胞半径、细胞排列及细胞的浓度有关。