Fuzzy logic switching of thyristor controlled braking resistorconsidering coordination with SVC

This paper presents a new switching control scheme for braking resistors (BR) using fuzzy logic to enhance overall stability of electric power systems. In addition, the coordination with an SVC is also considered to achieve a wider stable region. The braking resistor is set on one of the generator busbars, where the real power output from the generator is measured to determine the firing-angle of the thyristor switch. The switching control scheme is simple so as not to require heavy computation on the microcomputer based switching controller. An SVC is set on one of the busbars in the system. The switching of the SVC uses a similar fuzzy logic control scheme to the one for the BR. Simulation results show the effectiveness of the proposed fuzzy logic switching control scheme     

Micromachined piezoelectric force sensors based on PZT thin films

A micromachined lead zirconate titanate (PZT) force sensor for scanning force microscope (SFM) is conceptualized by its piezoelectricity. The fabrication procedure is interpreted, and mechanical characteristics of the micromachined PZT force sensors with various lengths are studied in this paper. A compact SFM is constructed by using the piezoelectric PZT sensor. A very clear image is taken by this SFM. The current study of the micromachined PZT force sensor can be considered as a breakthrough of design of SFM as well as a good example of integrated piezoelectric microdevices     

Erbium-doped silicon and porous silicon for optoelectronics

Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 μm intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this field and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor.     

Fuzzy inference and fuzzy inference processor

Fuzzy inference, a data processing method based on the fuzzy theory that has found wide use in the control field, is reviewed. Consumer electronics, which accounts for most current applications of this concept, does not require very high speeds. Although software running on a conventional microprocessor can perform these inferences, high-speed control applications require much greater speeds. A fuzzy inference date processor that operates at 200000 fuzzy logic inferences per second and features 12-b input and 16-b output resolution is described     

A Collection of Papers and Memoirs Celebrating the Contribution of Rod Burstall to Advances in Computer Science

Formal Aspects of Computing are dedicated to Professor Rod Burstall, and, as a collection of papers, memoirs and incidental pieces, form a Festschrift for Rod. The contributions are made by some of the many who know Rod and have been in uenced by him. The research papers included here represent some of the areas in which Rod has been active, and the editors thank their colleagues for agreeing to contribute to this Festschrift.     

The detection of the onset of electrode-electrolyte interfaceimpedance nonlinearity: a theoretical study

The equivalent series resistance and reactance of the electrode-electrolyte interface impedance have both been used to detect the onset of signal amplitude induced nonlinearity. Using a theoretical model, it is shown that the choice of the most sensitive indicator depends on the phase angle of the “polarization” impedance and on the applied frequency     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

An alternative approach to weight function evaluation for an orthotropic crack

The use of the analytically decoupled near-tip displacement solutions as an alternative approach, is presented in this paper for the efficient finite element evaluation of the decoupled weight functions for an orthotropic 2-D crack. This alternative approach has been validated by directly comparing the prior weight function results with a symmetric mesh approach in the crack-tip neighborhood, and indirectly by comparing the calculated stress intensity factors (K_I(II)) values using the computed weight functions with available K_I(II) solutions of the 2-D mixed mode orthotropic cracks. In addition, this approach with analytically decoupled near-tip displacement solutions for calculating weight functions at all locations, can facilitate further extension of weight function evaluations to a more general 2-D anisotropic crack.     

Accelerated aging of extruded dielectric power cables. I. Controland monitoring methodology

An improved accelerated cable life test is described. Through the use of programmable logic controllers (PLCs), very precise and consistent control of the accelerated aging process has been achieved. A computer has been utilized to make continuous real-time acquisition and storage of key operating parameters possible. This precise control and monitoring methodology has permitted the study of the synergistic effects of voltage and temperature on the accelerated aging of full-sized cables in the laboratory