“Metallisation” of oxide surfaces observed by in situ high-resolution electron microscopy

Intense irradiation (25–40 A/cm²) at intermediate energy (400 keV) has been found to cause “metallisation” of tungsten oxide and titanium niobate crystal surfaces. The possible mechanisms and the likely consequences for high-resolution imaging of clean oxide surfaces are briefly discussed.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Performance and modeling of advanced Ti:LiNbO3 digitaloptical switches

High-performance Y-branch digital optical switches realized in Ti:LiNbO₃ are presented. Their switching response functions have been optimized in terms of switch voltage and crosstalk ratio. The optimization is based on analyzing different types of waveguide shaping and switching arrangements using coupled mode theory and computer simulations. Excellent switching characteristics are achieved with devices exploiting a specially shaped waveguide branch in a dilated switch arrangement. Demonstrated performances include switching voltage as low as 9 V with crosstalk suppression better than 45 dB and fiber-to-fiber losses as low as 4 dB. Polarization independence with crosstalk suppression better than 40 dB over a 1520- to 1570-nm wavelength range is achieved for any applied switch voltage greater than 18 V. These optimized digital optical switches have further demonstrated the capability to reshape electrical input signals at switching rates of several hundred megahertz     

Three-phase flash and distillation

A mixed K-value model allows existing computer programs for the simulation of vapor-liquid equilibrium stages to be used for three-phase vapor-liquid-liquid systems. The mixed K-value model has been implemented with a minimum effort into the Badger General Material Balance flow-sheeting program. Good convergence has been obtained with the mixed K-value model for a number of systems. A comparison is made with published literature [1, 2], showing excellent results with this generally applicable and easy-to-use method.     

Interactions of electron beams with surfaces of MgO crystals

The strong interaction of electrons with the flat surfaces of small crystals has been investigated by high resolution CTEM and STEM instruments. When cubic crystals of MgO smoke with edges 20–300 nm are oriented so that the ?001? or ?011? zone axis is parallel to the optical axis, then two kinds of external fringes are observed at (100) surfaces. One kind is parallel to the surface, having spacings up to 0.4 nm. These are caused by interference among the electron channelled along the surface. Fresnel-diffracted ones and the remnant of the incident beam. Fringes of the other kind, which appear as fine structure in the first kind of fringes, are perpendicular to the crystal edge. When an electron beam is parallel to the ?011? axis, the second kind of fringe, whose spacing is 0.3 nm corresponding to d₀₁₁, shows the difference of the surface potential between magnesium atoms and oxygen atoms. Selected area diffraction patterns and microdiffraction patterns also show the same periodicities as in the two kinds of fringes. Simulated images, using the scattering amplitudes for ions, are compared with observations.     

Effect of facet coatings on far fields of semiconductor lasers

A theoretical expression is derived for the far fields of semiconductor lasers with coated facets. It is shown that the far fields are different for uncoated, antireflection-coated and high-reflection-coated lasers. The correction factor for the far fields is shown to depend on the transmission coefficient of the facets.