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Water Resources Management - Poor irrigation management is a common issue of irrigated agriculture. Assessment of irrigation system performance is essential to improve the irrigation system, which...  相似文献   
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Having extensive knowledge of room temperature and temperature dependent dielectric and impedance properties of iron oxide nanostructures will help in extending the field of application from biomedical sciences to microelectronics industry. This aspect of iron oxide has long been neglected and the attention is mostly focused on magnetic investigations. To explore and extend the field of application of iron oxide this study is focused on detailed investigation of structural as well as temperature dependent (30–210?°C) dielectric along with impedance analysis. Iron oxide nanostructures are prepared using template free oleic acid assisted sol-gel method with variation in molarity of the finally synthesized sol in the range of 0.2–2.0?mM (interval 0.2?mM). Magnetite (Fe3O4) phase is observed at molarity of 0.2?mM whereas, vacancy ordered and disordered maghemite (γ-Fe2O3) phases are observed at molarities of 0.8–1.0?mM and 1.4–2.0?mM, respectively. Dielectric constant of 104.6, 74.5 and 98.43 (log f = 5.0) is observed at molarities of 0.2?mM, 1.0?mM and 2.0?mM for Fe3O4 and vacancy ordered (Vo) & disordered (Vd) γ-Fe2O3 phase, respectively. Zview software is used for the fitting of Nyquist plots. Fitted data reveals that dielectric constant strongly depends on grain boundary resistance (Rgb). Activation energy of 0.25?eV and 0.296?eV (log f = 5) is observed for Fe3O4 and Vd γ-Fe2O3 phase at 0.2?mM and 2.0?mM molarity of the final iron oxide sol.  相似文献   
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Device aspect ratios and dimensions at the contact and via levels for old and new technologies are driving PVD/WCVD-based metallization to its full limit at integrated circuits (ICs) fabrication sites (Wilson et al., 1993). Contact and via This work describes the work performed at ST Microelectronics regarding the TiN barrier film properties with respect to process variables. Single-step and dual-step TiN barrier processes were studied for contact and via step coverage profiles used for aluminum and tungsten plug technologies. Electrical contact resistance values were evaluated using single and dual step TiN barrier processes. EVOLVE, a topography simulation program was used to study the step coverages and deposited film profiles for single and dual steps TiN barrier processes. In this work we prove that dual step TiN barrier process is superior to single step TiN barrier process in terms of step coverage, current leakage, film stress and contact resistance values.  相似文献   
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Sediment samples from three boreholes namely Paniro-II, North Akri, and Bhadmi of Sembar Formation, Southern Indus Basin were geochemically analyzed. The Soxhlet extracted bitumen were fractionated by column chromatography. The saturate fractions were further analyzed to evaluate type and quality of organic matter (OM). Total organic carbon, determined by a wet combustion titration method, indicates fair-to-good source rock potential. The plot of isoprenoids/n-Alkanes shows a mixed source of OM. Pristane/Phytane values and distribution of hydrocarbons showed dysoxic depositional environment. Carbon preference indices suggested increase in maturity with depth.  相似文献   
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A number of medium to small sized barite deposits are located within the Mor Mountain Range, Pakistan. The present study evaluated eight barite deposits from the Lasbela area, Balochistan, Pakistan, representing the different parts of the Mor Range. Evaluation of the barite content and those properties important in the production of heavyweight concrete aggregate indicated that the material would be suitable for the construction of earthquake resistant buildings and for radiation shielding.  相似文献   
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