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排序方式: 共有7223条查询结果,搜索用时 6 毫秒
21.
A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW. 相似文献
22.
Shinsook Yoon Mi-Kyoung Kim In-Young Lee Mikyung Yun Jeong E. Nam Shin 《Journal of Industrial and Engineering Chemistry》2008,14(6):759-764
We have developed a mutant strain derived from Agrobacterium sp. ATCC 31750, which produces a water-soluble polysaccharide having potential utility to the food, feed, pharmaceutical and cosmetic industries. A high concentration of product (15 g/L) is obtained by 48 h cultivation of the mutant strain under optimized fermentation conditions. The water-soluble polysaccharide obtained from cultures of the mutant strain beta82 has Glc:Man:Gal in approximate molar ratios of 5.8:6.7:1.0. The molecular weight of the polysaccharide was determined to be approximately 1000 kDa by HPSEC analysis. Linkage analysis contained 3-Glcp, 3-Manp, terminal Glcp and terminal Manp, as well as a small proportion of 3- and 3,4-Galp, and 4,6-Manp residues. Based on analyses using FT-IR and 13C NMR spectrometers, most glycosidic bonds joining these sugar residues are of the α-type, and acetyl groups are apparently attached to the polymer chain at random. 相似文献
23.
In this article we survey a number of predeployed secure key distribution (PSKD) schemes proposed in the technical literature. We also propose a new time-based PSKD (TPSKD), which operates under the assumption of loose time synchronization, and discuss the performance of the scheme. Since the TPSKD scheme uses time information, which would typically already be available in sensor nodes, the cost of the scheme?s implementation is low. 相似文献
24.
A novel method for the fabrication of highly ordered nanopore arrays with very small diameter of 14 nm was demonstrated by
using low-temperature anodization. Two-step anodization was carried out at 25 V, sulfuric acid concentration of 0.3 M, and
electrolyte temperature of −15 °C. After anodization, a regular pore array with mean diameter of 14 nm and interpore distance
of 65 nm was formed. The pore diameter and regular arrangement were confirmed by scanning electron microscopy (SEM) and fast
Fourier transformation (FFT), respectively. The present results strongly suggest that the diameter of pores in a highly ordered
alumina template can be reduced by lowering the anodization temperature. 相似文献
25.
Fast DCT algorithm with fewer multiplication stages 总被引:1,自引:0,他引:1
Yeonsik Jeong Imgeun Lee Hak Soo Kim Kyu Tae Park 《Electronics letters》1998,34(8):723-724
A novel fast DCT scheme with reduced multiplication stages and fewer additions and multiplications is proposed. The proposed algorithm is structured so that most multiplications tend to be performed at the final stage, which reduces the propagation error that could occur in the fixed-point computation. Minimisation of the multiplication stages can further decrease the error 相似文献
26.
HJ Lee HK Ha MH Kim YK Jeong PN Kim MG Lee JS Kim DJ Suh SG Lee YI Min YH Auh 《Canadian Metallurgical Quarterly》1997,169(2):517-520
OBJECTIVE: The purpose of this study was to evaluate ERCP and CT findings of ectopic drainage of the common bile duct into the duodenal bulb. CONCLUSION: Although rare, the diagnosis of ectopic drainage of the common bile duct into the duodenal bulb is important to prevent inadvertent damage during biliary tract or gastric surgery and to clarify the cause of chronic peptic ulcers. 相似文献
27.
Kyeongho Lee Yeshik Shin Sungjoon Kim Deog-Kyoon Jeong Kim G. Kim B. Da Costa V. 《Solid-State Circuits, IEEE Journal of》1998,33(5):816-823
In a high-resolution flat panel system, a conventional interface that directly connects a liquid crystal display (LCD) controller to a flat panel cannot overcome the problems of excess EMI (electromagnetic interference) and power caused by full-swing transmission signals in parallel lines. This paper presents a high-speed digital video interface system implemented with a low-cost standard CMOS (complimentary metal-oxide-semiconductor) technology that can mitigate EMI and power problems in high-resolution flat panel display systems. The combined architecture of the high-speed, small number of parallel lines and low-voltage swing serial interface can support resolutions from VGA (640×480 pixels) up to XGA (1024×768 pixels) with significant power improvement and drastic EMI reduction. To support high-speed, low-voltage swing signaling and overcome channel-to-channel skew problems, a robust data recovery system is required. The proposed digital phase-locked loop enables robust skew-insensitive data recovery of up to 1.04 GBd 相似文献
28.
Jeong Ho Moon Hak Soo Han Yong Gun Shul Do Hoon Jang Muyng Do Ro Du Suk Yun 《Progress in Organic Coatings》2007
This study relates to the development of coatings for optical discs in high-density digital versatile disc systems (HD-DVD or blue lay disk) that use a high numerical aperture of 0.85 at 405 nm wavelength and have a protective top layer over a primer layer for protection against damage and dust. Ultraviolet-curable raw materials of two acrylic monofunctional monomers ( isobornylacrylate, IBA and tetrahydrofurfurylacrylate, THFA) and two kinds of urethaneacrylate oligomers (OUMD and OUME) have been easily mixed with photoinitiators. Curing rate of these materials was characterized by FT-IR. In case of top coats, VTES (vinyltriethoxysilane) and acrylic acid were added to enhance the abrasion resistance. These two kinds of UV-curable resinous materials having no solvent were synthesized and investigated as means for making a blue ray disk having good optical and mechanical properties. In addition, dynamic characteristics including reflectivity, fluctuation of RF signal and noise level were also investigated. 相似文献
29.
30.
Onishi K. Rino Choi Chang Seok Kang Hag-Ju Cho Young Hee Kim Nieh R.E. Jeong Han Krishnan S.A. Akbar M.S. Lee J.C. 《Electron Devices, IEEE Transactions on》2003,50(6):1517-1524
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs. 相似文献