Annealing behavior of Ar ion irradiated Bi2Sr2Can-1CunO4+2n superlattice and intergrowth films

Artificially layered Bi₂Sr₂Ca_n–1Cu_nO_4+n films were synthesized by sequential sputter deposition of BiO, SrCu_0.5O_1.5 and CaCuO₂ layers. Annealing behavior of these films which were irradiated by Ar ions was studied. Defect assisted improvement of their crystalline perfection is expected which might results in the improvement of the superconducting properties of these films. An artificial film, such as an intergrowth of 2223 and 2234 phases, and superstructure films of (2245)₁(2201)₁ and (2234)₁(2212)₁, were irradiated by Ar ions (150 keV, 2–10×10¹² ions/cm₂) and annealed at 730 °C. An improvement of superconducting transition temperatures were observed.     

Relative zinc-binding capacity of metallothionein: studies in renal cytosols from zinc-injected rats

Each rat was injected intraperitoneally once with 0.9% NaCl or zinc (10, 20, 40, or 60 mg zinc/kg b.w.). The zinc content in kidney reached a maximum level of approx. 50 microgram/g kidney, corresponding to a dose (40 mg zinc/kg b.w.). The distribution profiles of the renal cytosols of zinc-injected rats on a Sephadex G-75 column showed that most of the increased zinc was attributable to metallothionein. There was a linear relationship between the zinc contents in cytosol and metallothionein. Our results demonstrated that there was a limit of zinc accumulation in kidneys of zinc-injected rats and that 57% of the increased zinc in renal cytosols was bound to metallothionein. Our results suggest that the role of metallothionein in zinc accumulation in the kidney is similar to that of zinc accumulation in liver.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Fibre transmission distance determined by eye opening degradation due to selfphase modulation and group-velocity dispersion

Numerical analysis of IM signal propagation in an optical fibre is carried out taking selfphase modulation and group-velocity dispersion into account. The transmission distance yielding a prescribed eye opening penalty, in the normal dispersion region, is shown to be inversely proportional to the square root of the signal power.<>     

Preparation of SiB4±x and SiB6 plates by chemical vapour deposition of SiCl4 + B2H6 system

SiB_4±x and SiB₆ plates were prepared by chemical vapour deposition (CVD) using SiCl₄, B₂H₆ and H₂ gases under the conditions of deposition temperatures (T _dep) from 1323–1773 K, total gas pressures (P _tot) from 4–40 kPa and B/Si source gas ratio (m _B/Si=2B₂H₆/SiCl₄) from 0.2–2.8. The effects of CVD conditions on the morphology, structure and composition of the deposits were examined. High-purity and high-density SiB_4±x and SiB₆ plates about 1 mm thick were obtained at the deposition rates of 71 and 47 nm s⁻¹, respectively. The lattice parameter, composition and density of CVD SiB_4±x plates were dependent on their non-stoichiometry. The lattice parameter,a, was 0.6325 nm, butc ranged from 1.262–1.271 nm.The B/Si atomic ratio ranged from 3.1–5.0, and the density ranged from 2.39–2.45×10³ kg m⁻³. The CVD SiB₆ plates showed constant values of lattice parameters (a=1.444 nm,b=1.828 nm,c=0.9915 nm), composition (B/Si=6.0) and density (2.42×10³ kg m⁻³), independent of CVD conditions.     

An over 2200-km coherent transmission experiment at 2.5 Gb/s usingerbium-doped-fiber in-line amplifiers

A 2223 km transmission distance was achieved with a 2.5-Gb/s heterodyne detection system that used erbium-doped-fiber in-line amplifiers and dispersion-shifted single-mode fibers. Twenty-five amplifiers, placed at approximately 80-km intervals, offered a total gain of more than 440 dB. Receiver sensitivity was -42.0 dBm, with only a 4.2-dB penalty from the initial sensitivity achieved by the back-to-back configuration     

High performance liquid chromatographic separation of stereoisomeric bile acids as their UV-sensitive esters

High performance liquid chromatographic separation of a series of mono-, di- and trihydroxylated 5β-cholanic acids which differ only in position and configuration of hydroxyl groups at positions C-3, C-7 and/or C-12, is reported. The C-24 free acids were derivatized to four different classes of UV-sensitive esters, i.e.,p-bromophenacyl (BP),m-methoxyphenacyl (MP), 4-nitrophthalimidemethyl (NPM) and 9-anthrylmethyl (AM) esters, and chromatographed on two, variants of C₁₈ reversed-phase columns (Nova-Pak C₁₈ and Zorbax ODS) with methanol-water systems as mobile phase. Separation efficiency and elution order of some isomeric pairs were influenced by both the structure of the C-24 ester groups and the nature of the columns used. Excellent chromatographic properties were found for those derivatives, particularly for the NPM esters.     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology