Classification of the effectiveness of combination treatments

According to FDA regulations, a combination drug is not efficacious unless each component contributes to the claimed effects. For a univariate endpoint, this implies that the combination at specific doses must be superior to each of its components at the same doses. More demanding is the property of synergy, in which the effect of the combination must be superior to the effect expected based on those of its components. If it is equal to those effects, it is additive, and if it is inferior, it is antagonistic. We give regions in the combination dose plane where these concepts are well defined. If the effect of the combination is greater than the greatest effect achievable by any of its components it is therapeutically synergistic. A combination can be antagonistic, yet its components can still contribute to the claimed effects. If it is additive, synergistic or therapeutically synergistic, its components must contribute to the claimed effects. We relate these concepts and provide designs and sequential procedures for determining whether a combination is therapeutically synergistic, synergistic, additive, antagonistic and contributing or antagonistic and non-contributing.     

鲁布革水电厂计算机监控系统的更新改造

鲁布革水电厂原Ｒ３０计算机监控系统更新改造过程中，重点研究了与原西门子ＲＴＵ的数据交换，机组功率调节和线路定功率调节的实现有关问题，在对３号机组计算机监控系统改造试验的基础上，成功地实现了计算机监控系统的整体改造，改造后采用的国产ＮＡＲＩＳＳＪ－３０００计算机监控系统实用可靠，功能完善，配置灵活，具有国际，国内领先水平。     

Electroluminescent zinc sulphide devices produced by sol-gel processing

Zinc sulphide thin film electroluminescent devices doped with Mn or Tb have been produced on p-type Si substrates using a process in which doped zinc oxide films are deposited by a sol-gel drain coating method from a solution of zinc acetate containing a manganese or terbium dopant. The films are then converted to ZnS by heating them in an atmosphere containing hydrogen sulphide which replaces the oxygyn with sulphur. The composition, crystalline structure and optical properties of films have shown that complete conversion from the oxide to the sulphide takes place. The luminescent characteristics of the devices so produced have been measured as a function of the doping concentrations, film thickness, insulator thickness and driving voltage and frequency. It has been found that yellow or green luminescence can be obtained using Mn or Tb doping respectively.     

非线性隔振理论初探

本文以线必阻尼，立方刚度非线性系统为例，对非线性隔振理论进行了初步探讨，导出了系统的无量纲运动响应和传递率，并与线性隔振系统进行了比较，着重讨论了非线性对它们的影响，获得了一些有用的结论。     

一种获得透视图的新方法

依据物体透视图的人工作图法，本文提出了确定透视变换矩阵的新方法，这种方法基于一组新的参数，而每个参数与透视变换的结果有明显关系，因此便于使用，并给出了计算机作图示例。     

智能控制在回转窑配料系统中的应用

本文介绍智能控制在回转窑配料系统中的应用情况，并阐述该控制器设计、构成、软件系统特点及现场运行效果。     

Structured genetic algorithm for robust H∞ controlsystems design

A structured genetic algorithm (SGA) approach is developed for robust controller design based on the concept of an H^∞ loop-shaping technique and the method of inequalities. Such an SGA is capable of simultaneously searching the orders and coefficients of the precompensator and postcompensator for the weighted plant. It is, therefore, not necessary to predefine the order of compensators as in usual practice. A multiple objective ranking approach is also incorporated so that the design criteria of extreme plants can be easily achieved. The effectiveness of such a technique is illustrated by a high-purity distillation column design example     

Genetic algorithms: concepts and applications [in engineeringdesign]

This paper introduces genetic algorithms (GA) as a complete entity, in which knowledge of this emerging technology can be integrated together to form the framework of a design tool for industrial engineers. An attempt has also been made to explain “why” and “when” GA should be used as an optimization tool     

MOS控制晶闸管的三重扩散工艺研究

本文对ＭＣＴ的核心工艺－三重扩散工艺进行了详细研究。通过ＳＵＰＲＥＭ－Ⅲ计算机工艺仿真，获得了三重扩散的工艺条件。     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained