葛洲坝水电站水轮机磨蚀评析

作为长江第一坝的葛洲坝水电站,其水轮机磨蚀情况引起国内同行的关注。根据长江的水沙特点、葛洲坝工程泥沙研究成果、十年来运行观测实践、水轮机运行及磨蚀修复状况,对葛洲坝水轮机磨蚀的现状进行了评论和剖析,提出了今后评价和解决葛洲坝水轮机磨蚀的九点建议及意见。     

管外上升R－113流体的沸腾换热试验

详细介绍了Ｒ－１１３流体管外上升流动的沸腾换热试验，包括试验台架、流量计和温度测量的修正，以及试验数据。拟合的换热关系式为ｑ＝５２８（Ｔｗ─Ｔｓ）１．３３。     

珠江口盆地(西部)早第三纪古环境分析

珠江口盆地(西部)早第三纪的古环境变迁与盆地的形成及演化紧密相关。早第三纪盆地演化经历了4个阶段。第一阶段,盆地早期拉张,以粗粒沉积物沉积为主,部分地域发育小湖盆。第二阶段,盆地稳定下沉,是富营养性湖泊的鼎盛期,形成优质湖相烃源岩。第三阶段,湖盆萎缩,煤系沼泽发育,形成湖相和煤系两类重要烃源岩。第四阶段,古湖泊消亡,海水漫进,滨浅海砂岩体发育,形成油气勘探的有利目的层。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。     

Two-level optimal output feedback stabilizer design

The paper addresses the design of two-level power system stabilizers using an optimal reduced order model whose state variables are torque angles and speeds. The reduced order model retains their physical meaning and is used to design a two-level linear feedback controller that takes into account the realities and constraints of electrical power systems. The two-level control strategy is used, and a global control signal is generated from the output variables to minimize the effect of interactions. The effectiveness of this controller is evaluated and a multimachine system is given as an example to illustrate the advantages of the proposed method. Responses of the system with a two-level scheme and an optimal reduced order scheme are included for comparative analysis.     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.