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111.
112.
高炉加入含钛物料护炉的方法探讨 总被引:2,自引:0,他引:2
比较分析了目前高炉所采用的两种加入含钛物料护炉的方法,长期少量均匀加入法和间断大量加入法,并结合梅山1号高炉折护炉实践和停炉后的破坏调查结果,提出了第三种加入含钛物料的方法,即长期适量加入法。 相似文献
113.
Speed-up fractal image compression with a fuzzy classifier 总被引:4,自引:0,他引:4
This paper presents a fractal image compression scheme incorporated with a fuzzy classifier that is optimized by a genetic algorithm. The fractal image compression scheme requires to find matching range blocks to domain blocks from all the possible division of an image into subblocks. With suitable classification of the subblocks by a fuzzy classifier we can reduce the search time for this matching process so as to speedup the encoding process in the scheme. Implementation results show that by introducing three image classes and using fuzzy classifier optimized by a genetic algorithm the encoding process can be speedup by about 40% of an unclassified encoding system. 相似文献
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This paper presents texture segmentation realised with image treatment methods and an artificial neural network model. Gabor oriented filters are used to extract frequential texture features and Self-Organising Feature Maps are used to group and interpolate these features. In order to decrease the number of filters, we use a pyramidal multiresolution method of image representation. We intend to build an architecture inspired by the early stages of the visual cortex, while making local frequential analysis of the images, which must be able to segment different textured images. 相似文献
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Fei Xu Zhisong Xiao Guoan Cheng Zhongzhen Yi Tonghe Zhang Lanlan Gu Xun Wang 《Thin solid films》2002,410(1-2):94-100
In this work, high concentration erbium doping in silicon-rich SiO2 thin films is demonstrated. Si plus Er dual-implanted thermal SiO2 thin films on Si substrates have been fabricated by using a new method, the metal vapor vacuum arc ion source implantation with relatively low ion energy, strong flux and very high dose. X-Ray photoelectron spectroscopy measurement shows that very high Er concentrations on the surfaces of the samples, corresponding to 10 at.% or the doping level of 1021 atoms cm−3, are achieved. This value is much higher than that obtained by using other fabrication methods such as the high-energy ion implantation and molecular beam epitaxy. Reflective high-energy electron diffraction, atomic force microscopy and cross-section high-resolution transmission electron microscopy observations show that the excess Si atoms in SiO2 matrix accumulate to form Si clusters and then crystallize gradually into Si nanoparticles embedded in SiO2 films during dual-ion implantation followed by rapid thermal annealing. Er segregation and precipitates are not formed. Photoluminescence at the wavelength of 1.54 μm exhibits very weak temperature dependence due to the introduction of Si nanocrystals into the SiO2 matrix. The 1.54-μm light emission signals from annealed samples decrease by less than a factor of 2 when the measuring temperature increases from 77 K to room temperature. 相似文献
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A study of dislocation configurations in superconducting oxide BiSrCaCuO has been made by transmission electron microscopy. Evidence was found for the presence of dislocation pairs composed of two parallel single dislocations holding together with the same Burgers vectors. The pair can further dissociate into partials, giving rise to a four-fold ribbon. Networks consisting of dislocation pairs were also observed. These phenomena are attributed to the possible ordering of strontium and calcium ions and the existence of some oxygen sheet of the Aurivillius type in the oxide crystal. Schemes to illustrate the configurations are suggested and discussed. 相似文献