高温过热器12Cr2MoWVTib（102）钢管的显微组织和相结构分析

本文对原始状态和在火力发电厂使用不同时间的高这热器１０２钢管进行了显微组织和相结构变化规律的探讨和研究。显微组织研究表明，１０２钢管在高温高压下长期运行过程中，使用温度对显微组织和碳化物相有明显影响，而使用时间对其影响不如温度影响强烈。碳化物颗粒图象分析表明，碳化物随着使用时间缓慢长大，而新的碳化物不沉淀，使颗粒总数不断增加，颗粒，间距逐渐缩小。Ｘ射线衍射数据证明，钢管在高温长期使用过程中，ＭＣ相     

Beam test of the CsI(Tl) calorimeter for the BELLE detector at the KEK-B factory

We studied the performance of a prototype electromagnetic calorimeter for the BELLE detector at the KEK proton synchrotron for an energy range of 0.25–3.5 GeV. The prototype consisted of an array of 6 × 5 CsI(Tl) crystals with 30 cm length (16.2 radiation lengths) and about 6 cm × 6 cm cross section. The scintillation light of each CsI(Tl) crystal was read out by two large-area PIN photodiodes and charge-sensitive preamplifiers attached at the rear face of the crystal. We measured the energy and position resolution for electrons and the e/π separation for two sets of matrix configurations: one corresponded to the center and the other to the edge of the barrel calorimeter. The overall performance measured by the test proves that the prototype calorimeter is satisfactory for the use in the BELLE detector.     

稀土Si_3N_4陶瓷材料中铝的络合滴定法测定

提出了强碱介质沉淀钇及有关杂质元素而与铝进行分离的方法。试液酸化后采用ＮａＦ析出法络合滴定测定铝。     

在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

HT－7托卡马克的八管弹丸注入器

介绍了用于ＨＴ－７托卡马克的的八管弹丸注入器的物理、工程设计原理和结构特点及配置的各种诊断手段。注入器采用气动发射技术，弹丸为１ｍｍ×１ｍｍ，１．２ｍｍ×１．２ｍｍ，１．５ｍｍ×ｌ．５ｍｍ圆柱体氢丸，丸速０．８～１．５ｋｍ／ｓ工作频率１～８Ｈｚ。     

三维定量储层地质模型与参数动态预测方法

提出了三维定量储层地质模型及其参数动态预测方法，用该方法可预测储层开采状态，水淹区及剩余油区分布和各剩余油区的可采储量，三维定量储层地质模型的预测图件可为合理开采提供依据。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.