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71.
Ohtsu M. Liou K.-Y. Burrows E.C. Burrus C.A. Jr. Eisenstein G. 《Lightwave Technology, Journal of》1989,7(1):68-76
The mode-hopping events in a 1.3-μm grating-tuned external-cavity laser are analyzed on the basis of interferometric measurements. The average frequency of mode hopping for a 7.5-cm external-cavity laser is estimated and is expressed as f c =2.7×106×exp [-1.7/(I /I th-1)] (hertz) for 0.07⩽(I /I th -1)⩽0.8 (I =injection current and I th =threshold current). The mode-hopping monitoring signal was negatively fed back to the laser using an automatic control circuit which maintained single-mode operation while the wavelength of the grating external-cavity laser was tuned 相似文献
72.
S.W. Chang T.-M. Liou K.F. Chiang G.F. Hong 《International Journal of Heat and Mass Transfer》2008,51(3-4):457-468
A novel heat transfer enhancement (HTE) roughness with V-shaped ribs and deepened scales is devised. Performances of heat transfer and pressure drop in a rectangular channel fitted with such HTE surfaces are experimentally examined for both forward and backward flows in the Re range of 1000–30000. Relative to the smooth-walled pipe flow conditions, HTE ratios for the present test channel with forward and backward flows, respectively, reach 9.5–13.6 and 9–12.3 for laminar flows and 6.8–6.3 and 5.7–4.3 for turbulent flows. Comparisons of heat transfer data, pressure-drop measurements and thermal performance factors with previous results collected from varieties of HTE devices demonstrate the superiorities of this compound HTE device. The decrease of HTE ratio as Re increases for turbulent flows, which is a common setback for several HTE elements, is almost diminished in the channel fitted with present compound HTE surfaces. Experimental correlations of heat transfer and friction coefficient for the tested channel with forward and backward flows are derived for design applications. 相似文献
73.
We have demonstrated a graded-index-rod external coupled-cavity (GRECC) laser with backface output through a partially transmitting external cavity mirror. Laser output is monitored from the backface in a transmitter module with double-loop feedback control which stabilizes output power and maintains single-frequency operation under CW and pseudorandom pulse modulation. 相似文献
74.
75.
Wu W.-C. Chao T.-S. Peng W.-C. Yang W.-L. Wang J.-C. Chen J.-H. Lai C.-S. Yang T.-Y. Lee C.-H. Hsieh T.-M. Liou J. C. 《Electron Device Letters, IEEE》2007,28(3):214-216
In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application 相似文献
76.
A model of reverse base current characteristics which is based on device physics is presented. The model requires only physical parameters, thus allowing circuit designers to estimate the device performance under avalanche operation prior to the actual device fabrication. Previously reported experimental data are included in support of the model 相似文献
77.
78.
Sivertsen K.N. Liou A.E.-L. Emami-Forooshani A. Michelson D.G. 《Wireless Communications, IEEE Transactions on》2009,8(8):3921-3925
We show by simulation that when the fading signals observed on orthogonally polarized diversity branches follow Ricean statistics, the distribution of polarization states on the Poincar′e sphere is well-approximated by a Fisher distribution. Further, we show that the Fisher concentration parameter is: (1) completely determined by the corresponding Ricean Kfactors and the cross-correlation coefficient between the diversity branches, both of which can be estimated from simple measurements of received power vs. time, and (2) a good indicator of the level of cross-polar discrimination (XPD) on the channel. The insights gained are potentially useful to those engaged in the development and validation of schemes that use either polarization re-use or polarized MIMO. 相似文献
79.
F. J. García Snchez A. Ortiz-Conde J. A. Salcedo J. Muci M. Estrada A. Cerdeira J. J. Liou Y. Yue 《Microelectronics Reliability》2000,40(6)
Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of operation. 相似文献
80.
Vinson J.E. Liou J.J. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2000,88(12):1878-1902
Electrostatic discharges (ESDs) are everywhere-in our homes and businesses. Even the manufacturers of the electronics experience ESD failures in their factories. Electronic devices are sensitive to ESD. ESD results in failure of our computers, calculators, and car phones. There are ways to protect these sensitive components. This paper looks at ESD protection from a two-pronged approach: reducing the likelihood of having an ESD event and improving the robustness of the devices themselves. The first approach focuses on reducing the amount of charge that is developed and controlling the redistribution of any charges that are developed The second approach reviews ways to improve the circuit robustness by improving individual circuit elements and by adding additional elements for charge flow control and voltage clamping 相似文献