首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   729篇
  免费   10篇
  国内免费   7篇
电工技术   17篇
综合类   6篇
化学工业   127篇
金属工艺   22篇
机械仪表   29篇
建筑科学   17篇
矿业工程   1篇
能源动力   47篇
轻工业   29篇
水利工程   3篇
石油天然气   1篇
武器工业   1篇
无线电   163篇
一般工业技术   137篇
冶金工业   56篇
原子能技术   3篇
自动化技术   87篇
  2024年   1篇
  2023年   1篇
  2022年   11篇
  2021年   9篇
  2020年   2篇
  2019年   4篇
  2018年   10篇
  2017年   5篇
  2016年   7篇
  2015年   10篇
  2014年   17篇
  2013年   60篇
  2012年   25篇
  2011年   28篇
  2010年   29篇
  2009年   34篇
  2008年   38篇
  2007年   27篇
  2006年   22篇
  2005年   20篇
  2004年   26篇
  2003年   33篇
  2002年   23篇
  2001年   30篇
  2000年   16篇
  1999年   25篇
  1998年   27篇
  1997年   21篇
  1996年   29篇
  1995年   14篇
  1994年   16篇
  1993年   26篇
  1992年   10篇
  1991年   18篇
  1990年   16篇
  1989年   13篇
  1988年   11篇
  1987年   7篇
  1986年   4篇
  1985年   3篇
  1984年   5篇
  1983年   6篇
  1982年   1篇
  1981年   1篇
  1980年   1篇
  1979年   1篇
  1977年   2篇
  1974年   1篇
排序方式: 共有746条查询结果,搜索用时 0 毫秒
71.
The mode-hopping events in a 1.3-μm grating-tuned external-cavity laser are analyzed on the basis of interferometric measurements. The average frequency of mode hopping for a 7.5-cm external-cavity laser is estimated and is expressed as fc =2.7×106×exp [-1.7/(I/I th-1)] (hertz) for 0.07⩽(I/Ith -1)⩽0.8 (I=injection current and Ith =threshold current). The mode-hopping monitoring signal was negatively fed back to the laser using an automatic control circuit which maintained single-mode operation while the wavelength of the grating external-cavity laser was tuned  相似文献   
72.
A novel heat transfer enhancement (HTE) roughness with V-shaped ribs and deepened scales is devised. Performances of heat transfer and pressure drop in a rectangular channel fitted with such HTE surfaces are experimentally examined for both forward and backward flows in the Re range of 1000–30000. Relative to the smooth-walled pipe flow conditions, HTE ratios for the present test channel with forward and backward flows, respectively, reach 9.5–13.6 and 9–12.3 for laminar flows and 6.8–6.3 and 5.7–4.3 for turbulent flows. Comparisons of heat transfer data, pressure-drop measurements and thermal performance factors with previous results collected from varieties of HTE devices demonstrate the superiorities of this compound HTE device. The decrease of HTE ratio as Re increases for turbulent flows, which is a common setback for several HTE elements, is almost diminished in the channel fitted with present compound HTE surfaces. Experimental correlations of heat transfer and friction coefficient for the tested channel with forward and backward flows are derived for design applications.  相似文献   
73.
We have demonstrated a graded-index-rod external coupled-cavity (GRECC) laser with backface output through a partially transmitting external cavity mirror. Laser output is monitored from the backface in a transmitter module with double-loop feedback control which stabilizes output power and maintains single-frequency operation under CW and pseudorandom pulse modulation.  相似文献   
74.
高吸水聚合物 (SAP)是一类不溶不熔的低交联高分子聚合物 ,常规的色谱法无法进行分析鉴定。本文介绍了红外光谱 (IR)、核磁共振法、热分析及电镜法在表征SAP中的应用  相似文献   
75.
In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application  相似文献   
76.
A model of reverse base current characteristics which is based on device physics is presented. The model requires only physical parameters, thus allowing circuit designers to estimate the device performance under avalanche operation prior to the actual device fabrication. Previously reported experimental data are included in support of the model  相似文献   
77.
分析研究了低铬合金铸球和复相球墨铸球中碳的赋存状态及其对普通钼精矿、57钼精矿和二硫化钼粉碳含量的影响,指出用浮选法生产低碳57钼精矿,一段磨矿介质不宜使用复相球墨铸球.  相似文献   
78.
We show by simulation that when the fading signals observed on orthogonally polarized diversity branches follow Ricean statistics, the distribution of polarization states on the Poincar′e sphere is well-approximated by a Fisher distribution. Further, we show that the Fisher concentration parameter is: (1) completely determined by the corresponding Ricean Kfactors and the cross-correlation coefficient between the diversity branches, both of which can be estimated from simple measurements of received power vs. time, and (2) a good indicator of the level of cross-polar discrimination (XPD) on the channel. The insights gained are potentially useful to those engaged in the development and validation of schemes that use either polarization re-use or polarized MIMO.  相似文献   
79.
Our recently proposed method to extract the bulk-charge effect parameter in MOSFETs is scrutinized by studying SOI devices, a-Si:H TFTs and short- as well as long-channel bulk MOSFETs. The method requires measuring the drain current as a function of gate voltage at two small values of drain voltage chosen in the linear region of operation.  相似文献   
80.
Electrostatic discharges (ESDs) are everywhere-in our homes and businesses. Even the manufacturers of the electronics experience ESD failures in their factories. Electronic devices are sensitive to ESD. ESD results in failure of our computers, calculators, and car phones. There are ways to protect these sensitive components. This paper looks at ESD protection from a two-pronged approach: reducing the likelihood of having an ESD event and improving the robustness of the devices themselves. The first approach focuses on reducing the amount of charge that is developed and controlling the redistribution of any charges that are developed The second approach reviews ways to improve the circuit robustness by improving individual circuit elements and by adding additional elements for charge flow control and voltage clamping  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号