Nanosecond and femtosecond mass spectroscopic analysis of a molecular beam produced by the spray-jet technique

The spray-jet molecular beam apparatus enabled us to produce a molecular beam of non-volatile molecules under high vacuum from a sprayed mist of sample solutions. The apparatus has been used in spectroscopic studies and as a means of molecular beam deposition. We analyzed the molecular beam, consisting of non-volatile, solvent, and carrier-gas molecules, by using femtosecond- and nanosecond- laser mass spectroscopy. The information thus obtained provided insight into the molecular beam produced by the spray-jet technique.     

2 Gb/s 15 pJ/b/chip Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking

An inductive-coupling programmable bus for NAND flash memory access in solid state drive (SSD) is presented. Compared to the conventional SSD, this wireless interface using relayed transmission reduces power consumption to 1/2, I/O circuit-layout area to 1/40, and achieves a data rate of 2 Gb/s in 0.18 ?m CMOS process. In addition, since this wireless interface enables one package to contain 64 chips, the number of packages is reduced to 1/8.     

Mode-hopping noise in index-guided semiconductor lasers and its reduction by saturable absorbers

Mode-hopping noise in index-guided semiconductor lasers is investigated. It is found that random switching between lasing modes and output power differences in those modes cause mode-hopping noise. An effective method to suppress such mode-hopping noise is proposed. High Te doping to an n-type GaAlAs cladding layer completely suppresses the noise. Te in GaAlAs forms a DX center that acts as a saturable absorber. This property stabilizes the laser mode and prevents mode competition. The minimum loss difference between lasing and nonlasing modes to suppress mode-hopping noise is also discussed.     

Comparative study on the bio-electrochemical denitrification equipped with a multi-electrode system.

Three biofilm-electrode reactors (BERs) with multiple cathodes were applied to investigate the effect of electrode configuration and flow direction on denitrification under laboratory-scale conditions. The distribution of nitrate, DO and pH varied among applied BERs, as a consequence of a different electrode position in the reactors, bringing about a difference in the performance. Flow-through configuration of electrodes with a downstream anode appears to be the most suitable configuration since nitrite did not accumulate in the effluent only in this experiment and the current-denitrification efficiency at low current densities was high. Thus, it is recommended for a low-loading operation.     

Numerical Modeling of an Earthquake-Induced Landslide Considering the Strain-Softening Characteristics at the Bedding Plane

The damage caused by an earthquake-induced landslide can generally be classified as either a limited deformation or a catastrophic failure. From an engineering point of view, the latter can be much more dangerous because the sliding mass may continue moving until it collides with another object. If a catastrophic failure occurs near a river, the debris may block the river, causing serious damage to the adjacent area. Therefore, examination of the mechanism of such catastrophic slope failures is important with respect to the mitigation of earthquake disasters in mountainous districts, although numerical modeling of such phenomena is rather difficult. In the present study, a new numerical model is developed to simulate an earthquake-induced catastrophic landslide that occured at a typical dip slope, namely, the Yokowatashi Landslide in Japan. In this case, the upper part of the bedrock on the planer tectonic dip surface slid more than 70 m. Only shear-strength degradation at the bedding plane could cause such a long-distance traveling failure. To investigate the strain-softening characteristics of the materials that filled the bedding plane, a series of laboratory tests involving undisturbed block samples was performed. The measured stress-displacement relationships under cyclic loading were numerically modeled as a newly proposed elasto-plastic constitutive model to be used in numerical simulations of landslide, based on the dynamic finite element method. The observed phenomena were appropriately simulated by the proposed method. The mechanism of catastrophic failure is discussed in detail in this paper in order to clarify the relationships between the strain-softening characteristics and the global slope stability. Our newly proposed method to evaluate the possibility of a catastrophic failure was applied to the landslide, and the moment when the slope becomes unstable was able to be predicted. The results confirm that the proposed method can predict the catastrophic failure of a slope.     

Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

Nonpolar AlGaN/GaN metal–insulator–semiconductor-heterojunction field-effect transistors (MIS-HFETs) with a complete normally off operation have been demonstrated for the first time. To realize the normally off operation of the MIS-HFETs, a 2-nm-thick SiN (as an insulator) and GaN-based nonpolar epitaxial layers that are free from polarization charges are employed. We have found that a thicker nonpolar AlN buffer layer achieves a GaN layer with a narrower full width at half maximum of the X-ray rocking curve and higher electron mobility. The fabricated MIS gate structure on the AlN buffer layer successfully decreases the gate leakage current and enables a more positive gate bias of up to $+$4 V, which is advantageous to achieve a higher drain current. Moreover, the n-GaN capping layer between gate and ohmic electrodes helps to reduce parasitic resistance and suppress current collapse. The fabricated $a$-plane MIS-HFET exhibits a threshold voltage of $+$ 1.3 V with a high drain current of 112 mA/mm. The presented MIS-HFETs will be desirable in next-generation radio-frequency and power switching application fields.