Highly Efficient Deep‐Blue Electrophosphorescent Pt(II) Compounds with Non‐Distorted Flat Geometry: Tetradentate versus Macrocyclic Chelate Ligands

A new class of deep blue electrophosphorescent Pt(II) emitters have been designed and synthesized. This new class of deep blue Pt(II) emitters employ tetradentate and macrocyclic chelate chromophores to constrain the Pt(II) molecules in a non‐distorted flat geometry in both the ground state and the excited state. The new deep blue emitters do not produce excimer emission, with emission quantum efficiency as high as 95% in 10% doped PMMA (poly(methyl methacrylate) films, and excellent UV stability, compared to the corresponding bidentate Pt(II) emitters. The macrocyclic tetradentate chelate Pt(II) compounds are the first examples of fully sterically constrained deep blue Pt(II) emitters that do not display structural distortion and have a higher thermal stability and a higher emission quantum efficiency than the corresponding non‐macrocyclic tetradentate Pt(II) analogues. A computational study supports that the macrocylic Pt(II) compounds are structurally more stable than the tetradentate Pt(II) molecules. Bright and efficient deep blue electrophosphorescent devices using a macrocyclic Pt(II) emitter have been successfully fabricated with a maximum brightness of 10 680 cd m^?2, maximum external quantum efficiency of 15.4% (at 490 cd m^?2), and Commission Internationale de L'Eclairage (1931) coordinates (x + y ) of less than or near 0.30, respectively.     

Monomolecular and Bimolecular Recombination of Electron–Hole Pairs at the Interface of a Bilayer Organic Solar Cell

While it has been argued that field‐dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBT‐type polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p‐DTS(FBTTh₂)₂ layer as donor material and C₆₀ as acceptor. The authors measure JV‐characteristics as a function of intensity and charge‐extraction‐by‐linearly‐increasing‐voltage‐type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (L_p) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor–acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor–acceptor interface. This effect is absent in the p‐DTS(FBTTh₂)₂ diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s‐shape of the JV‐curves and the concomitant additional decrease of the FF with increasing layer thickness.     

Performance Analysis of Full-Duplex Vehicle-to-Vehicle Relay System over Double-Rayleigh Fading Channels

Mobile Networks and Applications - In this paper, we study the performance of a full-duplex (FD) relay system in vehicle-to-vehicle (V2V) communication. In this relay communication system, the...     

Linearization of RF Power Amplifiers in Wideband Communication Systems by Adaptive Indirect Learning Using RPEM Algorithm

Mobile Networks and Applications - This paper proposes a new approach of digital predistortion (DPD) technique based on the adaptive indirect learning architecture (ILA) by using a recursive...     

Alias-Free Subband Adaptive Filtering With Critical Sampling

To overcome the limitations of a conventional fullband adaptive filtering, various subband adaptive filtering (SAF) structures have been proposed. Properly designed, an SAF will converge faster at a lower computational cost than a fullband structure. However, its design should consider the following two facts: the interband aliasing introduced by the downsampling process degrades its performance, and the filter bank in the SAF introduces additional computational overhead and system delay. In this paper, to fully exploit the benefits of using an SAF, an almost alias-free SAF structure with critical sampling is proposed. The interband alising is removed from the subband signal by isolating the aliasing using a bandwidth-increased analysis filter. Computer simulations show that the proposed structure converges faster than both an equivalent fullband structure at lower computational complexity and recently proposed SAF structures for a colored input.     

A Boronate Ester Driven Rechargeable Antibacterial Membrane for Fast Molecular Sieving

Membrane decorated with biocides is an effective way to suppress biofilm growth. However, their immediate biocidal effect usually suffers from a significant decline due to the irreversible consumption of the biocides. Here, a smart nanofiltration membrane is reported with rechargeable antibacterial capability that is fabricated by a facile interfacial polymerization via 3-aminophenylboronic acid and trimesoyl chloride on a polysulfone substrate. Biocides bearing diol groups can be grafted onto the membrane surface under neutral/alkaline condition and then released from the surface under acidic environment, due to the pH-responsive feature of boronate ester complexes. The resultant membrane exhibits integrated properties of fast bacterial inactivating efficiency, rechargeable antibacterial capability, and impressive stability. In addition, the achieved membrane shows remarkable separation efficiency to dye/monovalent salt system. The successful fabrication of the membrane with rechargeable anti-bacterial property provides new insights into the development of pH-responsive and sustainable antibacterial membranes.     

Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In-Sensor Neuromorphic Computation

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single-element image sensors that allow reception of information and execution of in-memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra-thin (<3 nm) doped indium oxide (In₂O₃) layers are engineered to demonstrate a monolithic two-terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof-of-concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real-time, in-sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.     

Z-function convolution in EHV power network electromagnetic transient analysis

Time-convolution in the forms arising in transformation from the frequency-domain to the time-domain has been widely used in the earlier development of electromagnetic transient methods in power systems. Independent work has recently led to new methods based on the z-transform, and the present paper develops methods based on discrete convolution arising from transformation to the time-domain now from the z-plane. The recursive solution sequences to which this leads combines high accuracy with low computing time requirements. Checks and controls in the synthesis of transmission line forward impulse response and surge impedance functions in the z-plane ensure that these are always stable system functions, and that numerical solution procedures which include them have very high inherent stability. The formulations developed are applied to transmission line energization from an equivalent source model, and the electromagnetic transients in short-circuit fault operation. Close comparisons are made between representative solutions from standard time-convolution analysis and from the methods of the present paper.     

Benchmarks of simple, generic, shaped plates for validation oflow-frequency electromagnetic computational codes

The validation of low-frequency measurements and electromagnetic (EM) scattering computations for several simple, generic shapes, such as an equilateral-triangular plate, an equilateral-triangular plate with a concentric equilateral-triangular hole, and diamond- and hexagonal-shaped plates, is discussed. The plates were constructed from a thin aluminium sheet with a thickness of 0.08 cm. EM scattering by the planar plates was measured in the experimental test range (ETR) facility of NASA Langley Research Center. The dimensions of the plates were selected such that, over the frequency range of interest, the dimensions were in the range of λ₀ to 3λ₀. In addition, the triangular plate with a triangular hole was selected to study internal-hole resonances     

A selective CVD tungsten-strapped polysilicon local interconnectiontechnology

A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure