Propagation of a quasi-shear horizontal acoustic wave in Z-Xlithium niobate plates [and conductivity sensor application]

It is found that an acoustic wave which is nearly polarized in the shear horizontal (SH) direction can propagate along the X axis of a Z-cut lithium niobate plate if the ratio h/λ, where h=plate thickness and λ=acoustic wavelength, is less than about 0.5. Attractive properties of this quasi-SH wave include: (1) phase velocity nearly constant for all values of h/λ; (2) ability to propagate in contact with a liquid medium; and (3) electromechanical coupling coefficient as high as 0.15. These properties make the wave attractive for use in a variety of sensor and signal processing applications. An example of sensor applications is illustrated by using the wave to measure conductivity of liquids (aqueous KCl solution). The frequency of a 12-MHz quasi-SH mode oscillator fabricated on a 0.48 wavelength thick Z-X lithium niobate plate is found to vary by more than 80 kHz for variation in KCI concentration from 0 to 0.15%     

Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier

This paper discusses changes in the spectrum and distortion of the electron wave function of a GaAs quantum well when a thin AlGaAs barrier is introduced into it. The potential difference generated across the quantum well by distortion of the electron wave function is calculated, along with its dependence on the position of the barrier in the quantum well. The photovoltaic response of the structure to optical intersubband excitations is also calculated, along with the role of wave function and electronic spectrum distortion as well as intersubband nonradiative transitions in generating this response. The suitability of a GaAs quantum well with a thin barrier for use as an infrared detector is considered. Fiz. Tekh. Poluprovodn. 32, 1246–1250 (October 1998)     

Lamp configuration design for rapid thermal processing systems

We have studied lamp configuration design for rapid thermal processing (RTP) systems. We considered a configuration consisting of four concentric circular lamp zones, three of them above the wafer and one circumventing the wafer. We propose a method to determine the geometric parameters, the width, height and radius, of the lamp zones so that the configuration designed has the capacity to achieve a uniform temperature on the wafer. The method is based on a necessary and sufficient condition for uniform temperature tracking and analytic expressions of the view factors. A design example is given in which a least square open-loop control law yields good temperature uniformity     

Tomsk complex for neutron-transmutation doping of silicon

All-Union Scientific-Research Institute of Nuclear Physics at the S. M. Kirov Tomsk Polytechnical University. Translated from Atomnaya énergiya, Vol. 79, No. 1, pp. 38–40, July, 1995.     

A microprocessor-based toggle-control lighting system

Analysis, design, practical consideration, and implementation of a microprocessor-based toggle-control lighting system are presented. The system is primarily configured with a power factor corrector (PFC), a square-wave voltage generator, a manually controlled toggle switch, and two relays. Toggling the toggle switch can select a different number of lamps in operation, resulting in a mutual dimming feature. A fluorescent lamp lighting system with this specific ballast gains the merits of lower system cost and more flexibilities in lighting fixture design, as compared to conventional systems     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)